2SJ20 Search Results

2SJ20 Result Highlights (5)

Part	Manufacturer	Description
2SJ206-T2-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive
2SJ202-T1-A	Renesas Electronics Corporation	Pch Mosfet For Switching
2SJ208-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive, POMM, /
2SJ206-T1-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive, POMM, /
2SJ207-T1-AZ	Renesas Electronics Corporation	Pch Mosfet For Switching

2SJ20 Price and Stock

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Rochester Electronics LLC 2SJ205-T1-AZ P-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ205-T1-AZ	Bulk	25,000		773	1 - 10 - 100 - 1000 $0.39 10000 $0.39	Buy Now
Rochester Electronics LLC 2SJ206-T1-AZ P-CHANNEL SMALL SIGNAL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ206-T1-AZ	Bulk	23,500		902	1 - 10 - 100 - 1000 $0.33 10000 $0.33	Buy Now
TE Connectivity ROX2SJ200K RES 200K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ200K	Cut Tape	6,508		1	1 $0.36 10 $0.2 100 $0.1176 1000 $0.08368 10000 $0.08368	Buy Now
	ROX2SJ200K	Ammo Pack	5,000		1,000	1 - 10 - 100 - 1000 $0.07292 10000 $0.0483	Buy Now
Avnet Americas	ROX2SJ200K	Bulk		13 Weeks, 5 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ200K		12,875			1 $0.34 10 $0.132 100 $0.073 1000 $0.069 10000 $0.051	Buy Now
Newark	ROX2SJ200K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 $0.058	Buy Now
Avnet Abacus	ROX2SJ200K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ200K					1 - 10 - 100 - 1000 $0.0742 10000 $0.0559	Buy Now
Rochester Electronics LLC 2SJ207-AZ P-CHANNEL SMALL SIGNAL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ207-AZ	Bulk	2,657		706	1 - 10 - 100 - 1000 $0.43 10000 $0.43	Buy Now
Panasonic Electronic Components ERG-2SJ202V RES 2K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ202V	Cut Tape	8		1	1 $0.31 10 $0.31 100 $0.31 1000 $0.31 10000 $0.31	Buy Now
	ERG-2SJ202V	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 2SJ20 price and stock on Findchips.com

2SJ20 Datasheets (113)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ20	Unknown	FET Data Book	Scan	PDF
2SJ20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF
2SJ200	Toshiba		Original	PDF
2SJ200	Unknown	FET Data Book	Scan	PDF
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF

2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF

2SJ20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking H17 Abstract: SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17 Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.	Original	PDF	2SJ209 OT-23 -10mA marking H17 SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17
2SJ201 Abstract: 2SK1530 toshiba pb includes Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes
Untitled Abstract: No abstract text available Text: 2SJ200 東芝電界効果トランジスタシリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : \|Yfs\|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。	Original	PDF	2SJ200 2SK1529
2SK1529 Abstract: K1529 2SJ200 Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 2SK1529 K1529 2SJ200
2SK1529 Abstract: Toshiba 2SJ Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 2SK1529 Toshiba 2SJ
Toshiba 2SJ Abstract: toshiba marking code transistor 2SK1530 toshiba Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba
Untitled Abstract: No abstract text available Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)	Original	PDF	2SK1529 2SJ200 2-16C1B K1529
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
2sk1530 Abstract: 2SJ201 Toshiba 2SJ Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2sk1530 2SJ201 Toshiba 2SJ
2SK1530 Abstract: 2SJ201 toshiba pb includes Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes
2SJ208 Abstract: No abstract text available Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SJ208 Pチャネル MOS FET スイッチング用外形図（単位：mm） 2SJ208は，2.5 V駆動タイプのPチャネル縦形MOS FETです。本MOS FETは低電圧で駆動でき，かつドライブ電流を考慮する必	Original	PDF	2SJ208 2SJ2082 Cycle50 D18277JJ4V0DS004 TC-7744B D18277JJ4V0DS 2SJ208
2SJ201 Abstract: 2SJ20 Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	PDF	2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	PDF	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	PDF	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10

7741B Abstract: 2SJ205 Text: DATA SHEET MO S FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING The 2SJ205, P-channel vertical type MOS FET, is a switching device PACKAG E DIMENSIONS U n it: mm which can be driven by 3 V power supply. As the MOS FET is driven by lo w voltage and does n o t require con	OCR Scan	PDF	2SJ205, 7741B 2SJ205
TC-2329A Abstract: F16V 2SJ207 IEI-1213 iei-1209 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con	OCR Scan	PDF	2SJ207 2SJ207, TC-2329A F16V 2SJ207 IEI-1213 iei-1209
c 2328a Abstract: 2SJ206 T500 Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device	OCR Scan	PDF	2SJ206 2SJ206, c 2328a 2SJ206 T500
2SK1530 Abstract: 2SJ201 Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SJ201	OCR Scan	PDF	2SK1530 2SJ201 2SK1530
Untitled Abstract: No abstract text available Text: DATA SHEET NEC / ELECTRON DEVICE MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ209, P-channel vertical type MOS PET, is a switching device PACKAGE D IM E N S IO N S U n it : mm which can be driven directly by the output o f ICs having a 5 V power	OCR Scan	PDF	2SJ209 2SJ209, b2SJ209 VP15-00 WS60-Q0
l1209 Abstract: No abstract text available Text: DATA SHEET NEC / M O S FIELD EFFECT TRANSISTOF 2SJ205 P-CHANNEL MOS FET FOR SW ITCHING PACK AG E D IM E N S IO N S U n it: mm The 2SJ205, P-channel vertical type M OS FE T, is a switching device which can be driven by 3 V power supply. As the MOS FE T is driven by low voltage and does not require con	OCR Scan	PDF	2SJ205 2SJ205, VP15-00 WS60-00 l1209
R621 Abstract: No abstract text available Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR _ / 2SJ204 ELÈCTRON DEVICE / P-CHANNEL MOS FET FOR SW ITCHING The 2SJ204, P-channel v ertical ty p e M OS FE T, is a sw itch in g device P A C K A G E D IM E N S IO N S Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er	OCR Scan	PDF	2SJ204 2SJ204, WS60-0Q R621
2SJ209 Abstract: No abstract text available Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ209, P-channel vertical type MOS F E T, is a switching device	OCR Scan	PDF	2SJ209 2SJ209, 2SJ209
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode	OCR Scan	PDF	2SK1530 2SJ201
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ. Complementary to 2SJ201	OCR Scan	PDF	2SK1530 2SJ201 2SK1530·

2SJ20 Search Results

2SJ20 Result Highlights (5)

2SJ20 Price and Stock

Rochester Electronics LLC 2SJ205-T1-AZ

Rochester Electronics LLC 2SJ206-T1-AZ

TE Connectivity ROX2SJ200K

Rochester Electronics LLC 2SJ207-AZ

Panasonic Electronic Components ERG-2SJ202V

2SJ20 Datasheets (113)

2SJ20 Datasheets Context Search

marking H17

2SJ201

Untitled

2SK1529

2SK1529

Toshiba 2SJ

Untitled

2SK1529

2sk1530

2SK1530

2SJ208

2SJ201

2SK1118

TRANSISTOR bH-10

7741B

TC-2329A

c 2328a

2SK1530

Untitled

l1209

R621

2SJ209

Untitled

Untitled