2SJ201
Abstract: 2SK1530 toshiba pb includes
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2-21F1B
2SJ201
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toshiba pb includes
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Toshiba 2SJ
Abstract: toshiba marking code transistor 2SK1530 toshiba
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
Toshiba 2SJ
toshiba marking code transistor
2SK1530 toshiba
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2sk1530
Abstract: 2SJ201 Toshiba 2SJ
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −200 V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2sk1530
2SJ201
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2SK1530
Abstract: 2SJ201 toshiba pb includes
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
2SK1530
2SJ201
toshiba pb includes
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Untitled
Abstract: No abstract text available
Text: 2SK1530O Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)
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2SK1530O
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Text: 2SK1530Y Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)
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2SK1530Y
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Untitled
Abstract: No abstract text available
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2-21F1B
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2SK1530
Abstract: 2SJ201 Toshiba 2SJ
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)
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2SK1530
2SJ201
2-21F1B
2SK1530
2SJ201
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toshiba pb includes
Abstract: 2SJ201 2SK1530
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2-21F1B
toshiba pb includes
2SJ201
2SK1530
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : |Yfs| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)
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2SK1530
2SJ201
2-21F1B
Toshiba 2SJ
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Untitled
Abstract: No abstract text available
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)
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2SJ201
2SK1530
2-21F1B
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Untitled
Abstract: No abstract text available
Text: 2SK1530 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)
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2SK1530
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2SK1530
Abstract: 2SJ201
Text: 2SK1530 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用 単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : |Yfs| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。
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2SK1530
2SJ201
2-21F1B
2002/95/EC)
2SK1530
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toshiba marking code transistor
Abstract: 2SJ201 toshiba 2SJ201 2SK1530 Toshiba 2SJ TOSHIBA Semiconductor Reliability Handbook
Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : |Yfs| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)
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2SJ201
2SK1530
2-21F1B
toshiba marking code transistor
2SJ201 toshiba
2SJ201
2SK1530
Toshiba 2SJ
TOSHIBA Semiconductor Reliability Handbook
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2SK1118
Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531
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2SK1529
2SK1530
2SK357
2SK358
2SK525
2SK526
2SK532
2SK387
2SK572
2SK578
2SK1118
2SK1513
TO-3P
2SK1723
2SK790
p-channel fet to-220
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Untitled
Abstract: No abstract text available
Text: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)
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2SK1530
2SJ201
2-21F1B
O-220SM
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2SK1530
Abstract: 2SJ201
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201
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2SK1530
2SJ201
2SK1530
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2SK1530
Abstract: 2SJ201
Text: TO S H IB A 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH PO W ER AM PLIFIER APPLICATION U n it in m m • H ig h B reak d o w n V o ltag e • H ig h F o rw a rd T ra n s fe r A d m ittan ce : |Y fs|= 5 .0 S T yp .
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2SK1530
2SK1530
2SJ201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode
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2SK1530
2SJ201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201
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2SK1530
2SJ201
2SK1530·
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 1 SILICON N CHANNEL MOS TYPE 5 3 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : V]3gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201
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2SK1530
2SJ201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : |Yfg| = 5.0S Typ. Complementary to 2SK1530
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2SJ201
20-5MAX.
--200V
2SK1530
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss *200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : |Yfs | *5.0S(TYP.) . Complementary to 2SJ201
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2SK1530
2SJ201
Tc-25
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2Sj201
Abstract: 2SK1530
Text: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SK1530
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2SJ201
-200V
2SK1530
2Sj201
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