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    K3879 Search Results

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    K3879 Price and Stock

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    Toshiba America Electronic Components 2SK3879-TE24LQ

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    Bristol Electronics 2SK3879-TE24LQ 7,813
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    Vishay Intertechnologies CRCW0603365KFKEA

    Thick Film Resistors - SMD 1/10watt 365Kohms 1%
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    TTI CRCW0603365KFKEA Reel 20,000 5,000
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    Vishay Intertechnologies NTHS0603N01N1003JE

    NTC Thermistors 100Kohms 5%
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    TTI NTHS0603N01N1003JE Reel 2,000
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    Vishay Intertechnologies CRCW201064R9FKEF

    Thick Film Resistors - SMD 3/4watt 64.9Ohms 1% 100ppm
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    TTI CRCW201064R9FKEF Reel 4,000
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    Harwin S25-546

    Contact Probes CRIMP SLEEVE
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    TTI S25-546 Bulk 1,000
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    K3879 Datasheets Context Search

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    LPC47N354

    Abstract: K3879 FDS49358 C1870 88SA8040 T43 88SA8040 ic c1891 quanta quanta computer bm10
    Text: 1 2 3 4 5 6 7 PWA: K3879, SCHEM: J3957 VER : 2A AZEDA-DISCRETE GFX A 8 JM5 M/B PCB RUN POWER SW PG 48 A AC/BATT CONNECTOR PG 50 BATT SELECTOR PG 43 BATT CHARGER PG 44 Dothan/Yonah DC/DC +3V_SRC +5VSUS CPU VR PG 47 PG 45 478 Micro-FCPGA PG 16 PG 42 PG 4,5


    Original     		K3879, J3957 4X133MHZ PCIEx16 DA204U BSS138 FDS6679 BLM11B102S CM1922 VZ0603M260APT LPC47N354 K3879 FDS49358 C1870 88SA8040 T43 88SA8040 ic c1891 quanta quanta computer bm10 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK3879 PDF

    k3879

    Abstract: 65a3 2SK3879
    Text: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK3879 k3879 65a3 2SK3879 PDF

    K3879

    Abstract: 2SK3879
    Text: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK3879 K3879 2SK3879 PDF

    2SK3879

    Abstract: K3879 2SK38 k387
    Text: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK3879 2SK3879 K3879 2SK38 k387 PDF

    2SK3879

    Abstract: K3879
    Text: K3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV K3879 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK3879 2SK3879 K3879 PDF