2SK123 Search Results

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

SJF00005BED

Contextual Info: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

2SK1233

Contextual Info: Ordering number : 3 1 6 2 N-Channel GaAs MES FET 2SK1233 4GHz-Band Local Oscillator, Amplifier Applications

2SK1234

Contextual Info: Ordering number : 3 1 6 3 N-Channel GaAs MES FET 2SK1234 4GHz-Band Local Oscillator, Amplifier Applications

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

Contextual Info: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit VDSO 20 V Drain to Gate voltage

Pan Overseas

Abstract: 8GHz oscillator
Contextual Info: F 2SK1234 No. 3163 SA N Y O i N-ChannclGaAsMESKIST 4G IIz-B a n d Local Oscillator, A m p lifie r A pplications F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator * Adoption of high reliable protection film A b s o lu te M axim um R a tin g s a tT a = 25°C

2SK1237

Abstract: 25CC
Contextual Info: J I SAiYO 2SK1237 No.3166 N-Channel GaAs MES FET 12GHz-Band Local Oscillator, _ Amp lifìey\Appli cations I Nv> F eatu re s •Ceramic package ■High gain ■Adoption of high reliable protection film "1%, A bsolute M axim um R atings a tT a —25°C

s3v 70

Abstract: S3V 05 vus3
Contextual Info: S JM Ê Y O J I 2SK1239 N0.316B N -C hanncl GaA s MES FRT 12GHz-Band Local Oscillator, F e a tu re s • M etal p ack ag e • Low noise fig u re , h ig h gain • A doption of high re lia b le protection film A b s o lu te M a x im u m R a tin g s a t T a = 25°C

2SK1237

Contextual Info: Ordering number : 3 1 6 6 N-Channel GaAs MES FET 2SK1237 12GHz-Band Local Oscillator, Amplifier Applications

2SK1238

Contextual Info: F SA\YO J 2SK1238 No.3167 I N -C hannel GaA s MISS FET 12GHz-Band Local Oscillator, _A m plifier Applications ':K * f / S ä k ., F e a tu re s '# * C eram ic package • Low noise figure, high gain ►A doption of high re lia b le p ro tectio n film

Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7TT7G7L, OOObó^b •- S • T -3 I-2 5 2SK1236 2072 @3165 N-Channel GaAs M ES FET 12GHz-Band Local OSC, Amp Applications F e a tu r e s • C eram ic package • Adoption of high reliable protection film A b s o lu te M a x im u m R a tin g s a t Ta = 25°C

Contextual Info: I 44^b205 00132b! ITI • H I T 4 HITACHI/ OPTOELECTRONICS blE » - 2SK1230 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 1. Gate 2. Drain • No Secondary Breakdown

Contextual Info: SANYO SEMICONDUCTOR CORP SEE D GODbäi4 1 imOlh T -3 1 -2 5 2SK1234 2071 N -C h a n n e l G aA s M E S FET 4GHz-Band Local OSC, Amp Applications 3163 F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator • Adoption of high reliable protection film

Contextual Info: 2SK123 Silicon Junction FETs Small Signal 2SK123 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For electret capacitor microphone +0.2 5.8 -0.3 +0.25 1.5 -0.05 1.9±0.1 +0.1 0.4 -0.05 2.4±0.1 1.45 +0.2 2 Symbol Rating Drain-Source voltage

Contextual Info: 2SK1235 No.3164 N-Channel GaAs MI3S F E T SAiYO 12G H z-B and Loca,] O scillato r, _ A m p lifie r A p p lic atio n s F eatu res •Casting mold package •Suited for 12GIiz-band local oscillation * Adoption of high reliable protection film A b so lu te M axim um R atin g s a t T a = 25°C

2SK123 transistor

Abstract: 2SK0123 2SK123 SJF00005BED
Contextual Info: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

2SK123

Abstract: 2SK0123 PANASONIC
Contextual Info: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm +0.2 5.8−0.3 1.9±0.1 +0.1 Drain to Gate voltage VDGO 20 V Drain to Source current IDSO

AO9T

Abstract: 2SK1233
Contextual Info: SANYO SEMICONDUCTOR CORP 22E » 7T=i 707L . OOÜ bñ TB T '- 3 1 - 2 5 2SK1233 2071 N-Channel GaAs M ES FET 4GHz-Band Local OSC, Amp Applications 3162 F e a tu re s •C asting mold package • Suited for 4GHz-band local oscillator ■Adoption of high reliable protection film

Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 eH 7 0 7 b QDDböT? 7 • T - 3 1 '2 0 2SK1237 2072 3166 N-Channel GaAs MES FET 12GHz-Band Local OSC, Amp Applications F e a tu re s • Ceramic package ■High gain ■Adoption of high reliable protection film A bso lu te M axim um R atin g s atT a= 25°C

2SK1238

Contextual Info: SANYO SEMICONDUCTOR CORP ESE D i m o GOObflTÖ i h • T -3 I-Z S 2SK1238 2072 3167 1 N-Channel GaAs MES FET 12GHz-Band Local OSC* Amp Applications F ea tu res • Ceramic package ■Low noise figure, high gain • Adoption of high reliable protection film

2SK1236

Contextual Info: Ordering number : 3 1 6 5 N-Channel GaAs MES FET 2SK1236 12GHz-Band Local Oscillator, Amplifier Applications

2SK123

Contextual Info: Silicon Junction FETs Small Signal 2SK123 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm +0.2 5.8−0.3 +0.25 1.5−0.05 2.4±0.1 0.4−0.05 1.9±0.1 +0.1 • Features +0.1 0.4−0.05 1.45

2SK1239

Contextual Info: Ordering number : 3 1 6 8 N-Channel GaAs MES FET 2SK1239 12GHz-Band Local Oscillator, Amplifier Applications