8GHz oscillator

Contextual Info: _ 2 S K / Z 3 3 N -C hannel GaA s M ES KBT 4GHz-Band Local Oscillator, A m plif.er Applications "%. ''V. A * . F e a tu re s • C astin g mold package •S uited for 4G H z-band local oscillator ■A doption of high relia b le protection film

Pan Overseas

Abstract: 8GHz oscillator
Contextual Info: F 2SK1234 No. 3163 SA N Y O i N-ChannclGaAsMESKIST 4G IIz-B a n d Local Oscillator, A m p lifie r A pplications F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator * Adoption of high reliable protection film A b s o lu te M axim um R a tin g s a tT a = 25°C

2SK1237

Abstract: 25CC
Contextual Info: J I SAiYO 2SK1237 No.3166 N-Channel GaAs MES FET 12GHz-Band Local Oscillator, _ Amp lifìey\Appli cations I Nv> F eatu re s •Ceramic package ■High gain ■Adoption of high reliable protection film "1%, A bsolute M axim um R atings a tT a —25°C

s3v 70

Abstract: S3V 05 vus3
Contextual Info: S JM Ê Y O J I 2SK1239 N0.316B N -C hanncl GaA s MES FRT 12GHz-Band Local Oscillator, F e a tu re s • M etal p ack ag e • Low noise fig u re , h ig h gain • A doption of high re lia b le protection film A b s o lu te M a x im u m R a tin g s a t T a = 25°C

2SK1238

Contextual Info: F SA\YO J 2SK1238 No.3167 I N -C hannel GaA s MISS FET 12GHz-Band Local Oscillator, _A m plifier Applications ':K * f / S ä k ., F e a tu re s '# * C eram ic package • Low noise figure, high gain ►A doption of high re lia b le p ro tectio n film

HEMT marking P

Contextual Info: SA NY O S E M I C O N D U C T O R CORP T W O T b SEE D OOObTOO 3 T-3Ì - IS 2SK1240-1243 HEMT Series 2072 2073 N-Channel AIGaAs/GaAs Hetero Junction FET X-Band Very Low-l\loise Amp Applications 3186 Features • Very low noise & ' High associated gain

Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7TT7G7L, OOObó^b •- S • T -3 I-2 5 2SK1236 2072 @3165 N-Channel GaAs M ES FET 12GHz-Band Local OSC, Amp Applications F e a tu r e s • C eram ic package • Adoption of high reliable protection film A b s o lu te M a x im u m R a tin g s a t Ta = 25°C

Contextual Info: SANYO SEMICONDUCTOR CORP SEE D GODbäi4 1 imOlh T -3 1 -2 5 2SK1234 2071 N -C h a n n e l G aA s M E S FET 4GHz-Band Local OSC, Amp Applications 3163 F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator • Adoption of high reliable protection film

Contextual Info: SANYO SEMICONDUCTOR CÔRP 22E D DOObflTS 3 T-3/-2S 2SK1235 2071 3164 N-Channel GaAs MÊS FET 12GHz-Band Local OSC, Amp Applications F e a tu r e s •C asting mold package ■Suited for 12GHz-band local oscillation • Adoption of high reliable protection film

Contextual Info: 2SK1235 No.3164 N-Channel GaAs MI3S F E T SAiYO 12G H z-B and Loca,] O scillato r, _ A m p lifie r A p p lic atio n s F eatu res •Casting mold package •Suited for 12GIiz-band local oscillation * Adoption of high reliable protection film A b so lu te M axim um R atin g s a t T a = 25°C

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D • 7TT7Q7b QOObôTT 20 7 3 . ' N-Channel GaAs MES FET 12GHz-Band Local OSC, Amp Applications F eatu res • Metal package • Low noise figure, high gain • Adoption of high reliable protection film A b solu te M axim um R a tin g s at Ta=25°C

AO9T

Abstract: 2SK1233
Contextual Info: SANYO SEMICONDUCTOR CORP 22E » 7T=i 707L . OOÜ bñ TB T '- 3 1 - 2 5 2SK1233 2071 N-Channel GaAs M ES FET 4GHz-Band Local OSC, Amp Applications 3162 F e a tu re s •C asting mold package • Suited for 4GHz-band local oscillator ■Adoption of high reliable protection film

Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 eH 7 0 7 b QDDböT? 7 • T - 3 1 '2 0 2SK1237 2072 3166 N-Channel GaAs MES FET 12GHz-Band Local OSC, Amp Applications F e a tu re s • Ceramic package ■High gain ■Adoption of high reliable protection film A bso lu te M axim um R atin g s atT a= 25°C

2SK1240-1243

Abstract: pa 2030a 2SK1241 2SK1240 2SK1242 2SK1243
Contextual Info: SANYO SEMICONDUCTOR CORP SEE 7T1707b D GOObTOO 3 T-3Ì -ZS 2SK1240-1243 HEMT Series 2072 N -C hannel AIGaAs/GaAs H etero J u n c tio n FET 2073 X-Band Very Low-l\loise Am p Applications 3186 F e a tu re s • Very low noise • High associated gain &