2SK152 Search Results

2SK152 Result Highlights (5)

Part	Manufacturer	Description
2SK1527-E	Renesas Electronics Corporation	Silicon N Channel MOSFET, TO-3PL, /Tube
2SK1521-E	Renesas Electronics Corporation	Silicon N Channel MOSFET
2SK1521-E1-E#T2	Renesas Electronics Corporation	Nch Single Power MOSFET 450V 50A 100mOhm TO-264
2SK1520-E	Renesas Electronics Corporation	Silicon N Channel MOSFET, TO-3PL, /Tube
2SK1522-E1-E#T2	Renesas Electronics Corporation	Nch Single Power MOSFET 500V 50A 110mOhm TO-264A

2SK152 Price and Stock

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Rochester Electronics LLC 2SK1526-E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1526-E	Bulk			11	1 - 10 - 100 $29.69 1000 $29.69 10000 $29.69	Buy Now
Hitachi Ltd 2SK1528S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK1528S		40		1	1 $8.775 10 $6.5813 100 $5.4844 1000 $5.4844 10000 $5.4844	Buy Now
Quest Components	2SK1528S		32			1 $11.7 10 $8.775 100 $7.8975 1000 $7.8975 10000 $7.8975	Buy Now
Renesas Electronics Corporation 2SK1528(L) TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4A I(D),TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1528(L)		30			1 $4.14 10 $3.036 100 $2.76 1000 $2.76 10000 $2.76	Buy Now
Renesas Electronics Corporation 2SK1527
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1527		24			1 $35.142 10 $33.3849 100 $31.6278 1000 $31.6278 10000 $31.6278	Buy Now
Renesas Electronics Corporation 2SK1526
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1526		13			1 $39.12 10 $37.164 100 $35.208 1000 $35.208 10000 $35.208	Buy Now

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2SK152 Datasheets (96)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK152	InterFET	N-Channel silicon junction field-effect transistor	Original	PDF
2SK152	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK152	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK152	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK152	Unknown	FET Data Book	Scan	PDF
2SK152	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK152	Sony		Scan	PDF
2SK1520	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF
2SK1520	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK1520	Renesas Technology	Silicon N Channel MOS FET	Original	PDF
2SK1520	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
2SK1520	Unknown	FET Data Book	Scan	PDF
2SK1520	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1520	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

2SK1520-E	Renesas Technology	Silicon N Channel MOS FET	Original	PDF
2SK1521	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK1521	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF
2SK1521	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK1521	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF
2SK1521	Renesas Technology	Silicon N Channel MOS FET	Original	PDF

2SK152 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK1521 Abstract: 2SK1522 Hitachi DSA00108 Text: 2SK1521, 2SK1522 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter	Original	2SK1521, 2SK1522 2SK1521 D-85622 2SK1521 2SK1522 Hitachi DSA00108	PDF
Untitled Abstract: No abstract text available Text: 2SJ200 東芝電界効果トランジスタシリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : \|Yfs\|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。	Original	2SJ200 2SK1529	PDF
Hitachi DSA002779 Abstract: No abstract text available Text: 2SK1528 L , 2SK1528(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline	Original	2SK1528 D-85622 Hitachi DSA002779	PDF
2SK1529 Abstract: K1529 2SJ200 Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 K1529 2SJ200	PDF
2SK1522-E Abstract: No abstract text available Text: 2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0300 Rev.3.00 May 13, 2009 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter	Original	2SK1521, 2SK1522 REJ03G0949-0300 PRSS0004ZF-A 2SK1521 2SK1522 2SK1522-E	PDF
2SK1529 Abstract: Toshiba 2SJ Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 Toshiba 2SJ	PDF
Untitled Abstract: No abstract text available Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)	Original	2SK1529 2SJ200 2-16C1B K1529	PDF
2SK1529 Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : \|Yfs\| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b	PDF
Hitachi DSA00279 Abstract: No abstract text available Text: 2SK1519, 2SK1520 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter	Original	2SK1519, 2SK1520 2SK1519 2SK1520 Hitachi DSA00279	PDF
Hitachi DSA002779 Abstract: No abstract text available Text: 2SK1526, 2SK1527 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL	Original	2SK1526, 2SK1527 2SK1526 2SK1527 15ica, D-85622 Hitachi DSA002779	PDF
Hitachi DSA002748 Abstract: No abstract text available Text: 2SK1526, 2SK1527 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter	Original	2SK1526, 2SK1527 2SK1526 2SK1527 15ica, D-85622 Hitachi DSA002748	PDF
2SK1521 Abstract: 2SK1522 2SK152-1 DSA003767 Text: 2SK1521, 2SK1522 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter	Original	2SK1521, 2SK1522 2SK1521 2SK1521 2SK1522 2SK152-1 DSA003767	PDF
2SK1520 Abstract: 2SK1519 2SK151 DSA003639 Text: 2SK1519, 2SK1520 Silicon N-Channel MOS FET ADE-208-1288 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter	Original	2SK1519, 2SK1520 ADE-208-1288 2SK1519 2SK1520 2SK1519 2SK151 DSA003639	PDF
K1529 Abstract: 2SK1529 2SJ200 Toshiba 2SJ Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)	Original	2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ	PDF

2SK152 Abstract: 2SK152 Sony 2sk152 equivalent Text: 2SK152 SONY. Silicon N-Channel Junction FET Package Outline Description The 2SK152 is the first device to reach such a high "Figure of merit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per form very efficiently.	OCR Scan	2SK152 2SK152 2SK152 Sony 2sk152 equivalent	PDF
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10	PDF
2sk152 equivalent Abstract: 2SJ44 2SK113 2SK152 Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters	OCR Scan	2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152	PDF
Untitled Abstract: No abstract text available Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c\|u ivalen ^ F ^ n h £\|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit	OCR Scan	2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L	PDF
2SK1529 Abstract: No abstract text available Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : \|Yfs\| = 4.0S Typ.	OCR Scan	2SK1529 2SJ200 2SK1529	PDF
2SK1523 Abstract: FP10W50 tccc Text: VXvU-X /\° 7 -M 0 S F E T VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1523 C F 5 P 1 W V 5 1 ] A • A C i s s • 7 ,- i • A C 10 0 V * A * 7 . 'T y - > ? > ^ 5 Ä © B E S jg • 'T V A '- i' RATINGS Absolute Maximum Ratings « & ie # Symbol i	OCR Scan	2SK1523 FP10W50] 2SK1523 FP10W50 tccc	PDF
k1523 Abstract: 2SK1523 FP10W50 k1523 diode Text: V X '> y -X /\°7 -M 0 S F E T V X S e rie s P o w er M O SFET imttfem 2SK1523 OUTLINE DIMENSIONS [FP10W50] 500V 10A • A * S * Ciss 9 % ' Æ iK ff î •A C 1O O V *A tHOT,-^ ' y ? y y W M •x -f • - fV K - í' • Æ të ft RATINGS Absolute Maximum Ratings	OCR Scan	2SK1523 FP10W50] -K1523 2113fi7 DDD2S27 k1523 2SK1523 FP10W50 k1523 diode	PDF
Untitled Abstract: No abstract text available Text: 2SK1519, 2SK1520 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode trr = 90 ns • Suitable for motor control, switching regulator, DC-DC converter	OCR Scan	2SK1519, 2SK1520 2SK1519	PDF
Untitled Abstract: No abstract text available Text: 2SK1526, 2SK1527 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	OCR Scan	2SK1526, 2SK1527 2SK1526	PDF
2sk152 equivalent Abstract: 2SK152 2SK152 Sony SK152 fet SK152 Text: 2SK152 S ony. Silicon N-Channel Junction FET Unit: mm Package Outline Description The 2SK1 52 is the first device to reach such a high "Figure of m erit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per	OCR Scan	2SK152 2SK152 2sk152 equivalent 2SK152 Sony SK152 fet SK152	PDF

2SK152 Search Results

2SK152 Result Highlights (5)

2SK152 Price and Stock

Rochester Electronics LLC 2SK1526-E

Hitachi Ltd 2SK1528S

Renesas Electronics Corporation 2SK1528(L)

Renesas Electronics Corporation 2SK1527

Renesas Electronics Corporation 2SK1526

2SK152 Datasheets (96)

2SK152 Datasheets Context Search

2SK1521

Untitled

Hitachi DSA002779

2SK1529

2SK1522-E

2SK1529

Untitled

2SK1529

Hitachi DSA00279

Hitachi DSA002779

Hitachi DSA002748

2SK1521

2SK1520

K1529

2SK152

TRANSISTOR bH-10

2sk152 equivalent

Untitled

2SK1529

2SK1523

k1523

Untitled

Untitled

2sk152 equivalent