Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK152 Search Results

    2SK152 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1527-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3PL, /Tube Visit Renesas Electronics Corporation
    2SK1521-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1521-E1-E#T2 Renesas Electronics Corporation Nch Single Power MOSFET 450V 50A 100mOhm TO-264 Visit Renesas Electronics Corporation
    2SK1520-E Renesas Electronics Corporation Silicon N Channel MOSFET, TO-3PL, /Tube Visit Renesas Electronics Corporation
    2SK1522-E1-E#T2 Renesas Electronics Corporation Nch Single Power MOSFET 500V 50A 110mOhm TO-264A Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK152 Price and Stock

    Rochester Electronics LLC 2SK1526-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1526-E Bulk 528 11
    • 1 -
    • 10 -
    • 100 $29.69
    • 1000 $29.69
    • 10000 $29.69
    		Buy Now

    Hitachi Ltd 2SK1528S

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK1528S 40 1
    • 1 $8.775
    • 10 $6.5813
    • 100 $5.4844
    • 1000 $5.4844
    • 10000 $5.4844
    		Buy Now
    Quest Components 2SK1528S 32
    • 1 $11.7
    • 10 $8.775
    • 100 $7.8975
    • 1000 $7.8975
    • 10000 $7.8975
    		Buy Now

    Renesas Electronics Corporation 2SK1528(L)

    MOSFET Transistor, N-Channel, TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1528(L) 30
    • 1 $4.14
    • 10 $3.036
    • 100 $2.76
    • 1000 $2.76
    • 10000 $2.76
    		Buy Now

    Renesas Electronics Corporation 2SK1527

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1527 24
    • 1 $35.142
    • 10 $33.3849
    • 100 $31.6278
    • 1000 $31.6278
    • 10000 $31.6278
    		Buy Now

    Renesas Electronics Corporation 2SK1526

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1526 13
    • 1 $39.12
    • 10 $37.164
    • 100 $35.208
    • 1000 $35.208
    • 10000 $35.208
    		Buy Now
    Find more 2SK152 price and stock on Findchips.com

    2SK152 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK152 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2SK152 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK152 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK152 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK152 Unknown FET Data Book Scan PDF
    2SK152 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK152 Sony Scan PDF
    2SK1520 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1520 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1520 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1520 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1520 Unknown FET Data Book Scan PDF
    2SK1520 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1520 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1520-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1521 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1521 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1521 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1521 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1521 Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK152 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1521

    Abstract: 2SK1522 Hitachi DSA00108
    Text: 2SK1521, 2SK1522 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


    Original     		PDF 2SK1521, 2SK1522 2SK1521 D-85622 2SK1521 2SK1522 Hitachi DSA00108

    Untitled

    Abstract: No abstract text available
    Text: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs|= 4.0S 標準 z 2SK1529 とコンプリメンタリになります。


    Original     		PDF 2SJ200 2SK1529

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1528 L , 2SK1528(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original     		PDF 2SK1528 D-85622 Hitachi DSA002779

    2SK1529

    Abstract: K1529 2SJ200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 K1529 2SJ200

    2SK1522-E

    Abstract: No abstract text available
    Text: 2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0300 Rev.3.00 May 13, 2009 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


    Original     		PDF 2SK1521, 2SK1522 REJ03G0949-0300 PRSS0004ZF-A 2SK1521 2SK1522 2SK1522-E

    2SK1529

    Abstract: Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK1529 2SJ200 2-16C1B K1529

    2SK1529

    Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1519, 2SK1520 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


    Original     		PDF 2SK1519, 2SK1520 2SK1519 2SK1520 Hitachi DSA00279

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1526, 2SK1527 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL


    Original     		PDF 2SK1526, 2SK1527 2SK1526 2SK1527 15ica, D-85622 Hitachi DSA002779

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1526, 2SK1527 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1526, 2SK1527 2SK1526 2SK1527 15ica, D-85622 Hitachi DSA002748

    2SK1521

    Abstract: 2SK1522 2SK152-1 DSA003767
    Text: 2SK1521, 2SK1522 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter


    Original     		PDF 2SK1521, 2SK1522 2SK1521 2SK1521 2SK1522 2SK152-1 DSA003767

    2SK1520

    Abstract: 2SK1519 2SK151 DSA003639
    Text: 2SK1519, 2SK1520 Silicon N-Channel MOS FET ADE-208-1288 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter


    Original     		PDF 2SK1519, 2SK1520 ADE-208-1288 2SK1519 2SK1520 2SK1519 2SK151 DSA003639

    K1529

    Abstract: 2SK1529 2SJ200 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ

    2SK152

    Abstract: 2SK152 Sony 2sk152 equivalent
    Text: 2SK152 SONY. Silicon N-Channel Junction FET Package Outline Description The 2SK152 is the first device to reach such a high "Figure of merit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­ form very efficiently.


    OCR Scan     		PDF 2SK152 2SK152 2SK152 Sony 2sk152 equivalent

    TRANSISTOR bH-10

    Abstract: marking BH-10 2SJ200 2SK1529 SC-65
    Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4 .0 S Typ. • Complementary to 2SK1529


    OCR Scan     		PDF 2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10

    2sk152 equivalent

    Abstract: 2SJ44 2SK113 2SK152
    Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters


    OCR Scan     		PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152

    Untitled

    Abstract: No abstract text available
    Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit


    OCR Scan     		PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L

    2SK1529

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.


    OCR Scan     		PDF 2SK1529 2SJ200 2SK1529

    2SK1523

    Abstract: FP10W50 tccc
    Text: VXvU-X /\° 7 -M 0 S F E T VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1523 C F 5 P 1 W V 5 1 ] A • A C i s s • 7 ,- i • A C 10 0 V * A * 7 . 'T y - > ? > ^ 5 Ä © B E S jg • 'T V A '- i' RATINGS Absolute Maximum Ratings « & ie # Symbol i


    OCR Scan     		PDF 2SK1523 FP10W50] 2SK1523 FP10W50 tccc

    k1523

    Abstract: 2SK1523 FP10W50 k1523 diode
    Text: V X '> y -X /\°7 -M 0 S F E T V X S e rie s P o w er M O SFET imttfem 2SK1523 OUTLINE DIMENSIONS [FP10W50] 500V 10A • A * S * Ciss 9 % ' Æ iK ff î •A C 1O O V *A tHOT,-^ ' y ? y y W M •x -f • - fV K - í' • Æ të ft RATINGS Absolute Maximum Ratings


    OCR Scan     		PDF 2SK1523 FP10W50] -K1523 2113fi7 DDD2S27 k1523 2SK1523 FP10W50 k1523 diode

    Untitled

    Abstract: No abstract text available
    Text: 2SK1519, 2SK1520 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode trr = 90 ns • Suitable for motor control, switching regulator, DC-DC converter


    OCR Scan     		PDF 2SK1519, 2SK1520 2SK1519

    Untitled

    Abstract: No abstract text available
    Text: 2SK1526, 2SK1527 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SK1526, 2SK1527 2SK1526

    2sk152 equivalent

    Abstract: 2SK152 2SK152 Sony SK152 fet SK152
    Text: 2SK152 S ony. Silicon N-Channel Junction FET Unit: mm Package Outline Description The 2SK1 52 is the first device to reach such a high "Figure of m erit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­


    OCR Scan     		PDF 2SK152 2SK152 2sk152 equivalent 2SK152 Sony SK152 fet SK152