2SK1731
Abstract: No abstract text available
Text: Ordering number : EN3826 SANYO Semiconductors DATA SHEET 2SK1731 N-Channel Silicon MOSFET Ultrahigh Speed Switching Applications Package Dimensions Features unit:mm 2085A • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
|
Original
|
PDF
|
EN3826
2SK1731
2SK1731]
2SK1731
|
2SK1731
Abstract: No abstract text available
Text: Ordering number:EN3826 N-Channel Silicon MOSFET 2SK1731 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
|
Original
|
PDF
|
EN3826
2SK1731
2SK1731]
2SK1731
|
2sc5203
Abstract: 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005
Text: Ordering number : E I 0 0 2 3 Announcement Regarding Discontinuation and Limited Availability to Existing Customers of Hyper Device Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis.
|
Original
|
PDF
|
CPH6405
CPH6434
TIG008SS
TIG014SS
TIG002SS
TIG008TS
TIG022TS
TIG004SS
2sc5203
2SK3615
2sk*3615
2SK1731
TIG022TS
2SJ633
2SJ646
2SK3492
2SJ636
MCH6005
|
E36J
Abstract: No abstract text available
Text: 2SK1731 LD L o w D rive S eries VDss = 30V 2085 N Channel Power M OSFET E'36J6 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Its height onboard is 9.5mm. - M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
|
OCR Scan
|
PDF
|
2SK1731
--10V
32593TH
E36J
|
2SK1731
Abstract: 32593TH EN3826
Text: Ordering n u m b e r:E N 3 8 2 6 _ 2SK1731 N-Channel MOS Silicon FET No.3826 Very High-Speed Switching Applications F eatu res •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
|
OCR Scan
|
PDF
|
EN3826
2SK1731
32593TH
|
2SK1723
Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
Text: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698
|
OCR Scan
|
PDF
|
2SKX698
2SK1699
1699S
2SK1700
ZSK1701
2SK1702
2SK1703
1703S
50nstyp
2SK1724
2SK1723
2SK1708
2SK1705
2SK1720
2SK1701
2SK1718
2SK1719
|
J254
Abstract: J188 J256 J287
Text: LD S e r i e s L o w Dr i ve Sanyo en g in eers have developed a se rie s of devices th a t com bine th e featu res of both LSI an d pow er device process technologies to achieve a low d riv e voltage ofV (js = 4V for sa tu ra tio n , m aking them ideal for 5V d riv e logic
|
OCR Scan
|
PDF
|
2SJ191
J254
J188
J256
J287
|
2SK1885
Abstract: 2SK2437 2SK2438
Text: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C
|
OCR Scan
|
PDF
|
2SK1847
2SK1467
2SK1724
2SK2437
2SK1468
2SK1469
2SK2046
2SK2438
2SK2439
2SK2555
2SK1885
|
TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
|
OCR Scan
|
PDF
|
T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
|
2SK1731
Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching
|
OCR Scan
|
PDF
|
2SK1474
2SK1475
2SK1920
2SK2046
2SK2153
2SK2619V
2SK2626V
2SK2634V
2SK2164
2SK2321
2SK1731
2SK2637
2SK1871
2SK2626
2sk2636
2SK2438
2sk2406
|
Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
|
OCR Scan
|
PDF
|
2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
|
J289
Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications
|
OCR Scan
|
PDF
|
3SK265
3SK266
3SK248
12/55m
2/80m
45/-/50m
130m/65m
21/90m
MT931224TR
J289
K2171
2sj281
2SK1847
2SK1470 KD
K1470
2sk669
K1311
|