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    2SK199 Search Results

    2SK199 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK199 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK199 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK199 Unknown FET Data Book Scan PDF
    2SK1990 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1990 NEC Semiconductor Selection Guide Original PDF
    2SK1990 NEC Original PDF
    2SK1990 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1990 Unknown FET Data Book Scan PDF
    2SK1990 NEC MOS Field Effect Power Transistor Scan PDF
    2SK1991 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1991 NEC Semiconductor Selection Guide Original PDF
    2SK1991 NEC Original PDF
    2SK1991 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1991 Unknown FET Data Book Scan PDF
    2SK1991 NEC MOS Field Effect Power Transistor Scan PDF
    2SK1992 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1992 NEC Semiconductor Selection Guide Original PDF
    2SK1992 NEC Original PDF
    2SK1992 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1992 Unknown FET Data Book Scan PDF

    2SK199 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK1999

    Abstract: Hitachi DSA00307
    Text: 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 15 dB, ηD = 65% typ f = 200 MHz • Compact package Suitable for push - pull circuit Outline 2SK1999 Absolute Maximum Ratings (Ta = 25°C) Item Symbol


    Original     		2SK1999 2SK1999 Hitachi DSA00307 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 15 dB, ηD = 65% typ f = 200 MHz • Compact package Suitable for push - pull circuit Outline RFPAK-B 3 4 5 2 1 D D G G S 1. Drain 2. Drain 3. Source


    Original     		2SK1999 D-85622 Hitachi DSA002780 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent PDF

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    2SJ83

    Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
    Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m


    OCR Scan     		2SK19600 2SK197 2SK198 2SK199 2SK201 2SK217 2SK218 2SK220 2SK221 2SS222 2SJ83 2SK238 2SJ82 2SK241 2SK240 2SK203 2S119 PDF

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANIMEL POWER MOS FET


    OCR Scan     		2SK1992/2SK1993 2SK1992/2SK1993 PDF

    2SK1990

    Abstract: 2SK1991 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		2SK1990/2SK1991 2SK1990/2SK1991 IEI-1209) 2SK1990 2SK1991 MEI-1202 TEA-1035 PDF

    2SK1991

    Abstract: 2SK1990 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		2SK1990/2SK1991 2SK1990/2SK1991 IEI-1209) 2SK1991 2SK1990 MEI-1202 TEA-1035 PDF

    2SK1992

    Abstract: 2SK1993 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELI5 EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		2SK1992/2SK1993 2SK1992/2SK1993 IEI-1209) 2SK1992 2SK1993 TEA-1035 PDF

    NEC JAPAN 7915

    Abstract: nec 7915 TC-7915 K1994 2sk1994
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1994 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1994 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance


    OCR Scan     		2SK1994 2SK1994 IEI-1209) NEC JAPAN 7915 nec 7915 TC-7915 K1994 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1999 Silicon N-Channel MOS FET HITACHI Application V H F am plifier Features • H igh gain, high efficiency • C om pact package PG = 15 dB , r D = 65% typ f - 200 M Hz) Suitable for push - pull circuit Outline RFPAK-B 4 3 1. Drain 2. Drain 3. Source


    OCR Scan     		2SK1999 PDF

    nec 7915

    Abstract: 2SK1994 10KW MEI-1202 TEA-1035 7915 transistor
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1994 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		2SK1994 2SK1994 IEI-1209) nec 7915 10KW MEI-1202 TEA-1035 7915 transistor PDF

    tea 2453

    Abstract: 2SK1995 MEI-1202 TEA-1035 TC-2453
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		2SK1995 2SK1995 IEI-1209) tea 2453 MEI-1202 TEA-1035 TC-2453 PDF

    Y243

    Abstract: 2SK1992 2SK1993 TEA-1035 t3gu
    Text: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANIMEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1992/2SK1993 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.


    OCR Scan     		2SK1992/2SK1993 IEI-1209) Y243 2SK1992 2SK1993 TEA-1035 t3gu PDF

    2SK1992

    Abstract: 2SK1993 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR i 2SK1992/2SK1993 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		2SK1992/2SK1993 2SK1992/2SK1993 IEI-1209) 2SK1992 2SK1993 TEA-1035 PDF

    2SK1995

    Abstract: tea 2453 MEI-1202 TEA-1035 transistor 2sk1995
    Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1995 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance


    OCR Scan     		2SK1995 IEI-1209) tea 2453 MEI-1202 TEA-1035 transistor 2sk1995 PDF

    2SK1993

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR i 2SK1992/2SK1993 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1992/2SK1993 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.


    OCR Scan     		2SK1992/2SK1993 2SK1992/2SK1993 IEI-1209) 2SK1993 PDF

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		2SK1995 2SK1995 PDF

    tea 2453

    Abstract: transistor 2sk1995 2SK1995 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		2SK1995 2SK1995 IEI-1209) tea 2453 transistor 2sk1995 MEI-1202 TEA-1035 PDF

    nec 7915

    Abstract: NEC JAPAN 7915 TC-7915 10KW 2SK1994 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1994 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		2SK1994 2SK1994 IEI-1209) nec 7915 NEC JAPAN 7915 TC-7915 10KW MEI-1202 TEA-1035 PDF

    2SK1990

    Abstract: 2SK1991 TC2-450 MEI-1202 TEA-1035
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1990/2SK1991 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1990/2SK1991 is N-channel MOS Field Effect Tran­ PACKAGE DIMENSIONS in millim eters sistor designed for high voltage switching applications.


    OCR Scan     		2SK1990/2SK1991 IEI-1209) 2SK1990 2SK1991 TC2-450 MEI-1202 TEA-1035 PDF