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    2SK176 Search Results

    2SK176 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1761-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK1764KYUR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 2A 450Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SK1764KYTL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 2A 450Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SK1764KYTR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 2A 450Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SK1762-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Fm Visit Renesas Electronics Corporation
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    2SK176 Price and Stock

    Renesas Electronics Corporation 2SK1764KYTL-E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1764KYTL-E 4,000
    • 1 $3.72
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    • 100 $3.72
    • 1000 $1.86
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    Toshiba America Electronic Components 2SK1768

    Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK1768 799
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    Renesas Electronics Corporation 2SK1762-E

    Power MOSFET, N Channel, 250 V, 12 A, 350 Milliohms, TO-220FM, 3 Pins, Through Hole (Alt: 2SK1762-E)
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    Avnet Asia 2SK1762-E 18 Weeks 1
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    Renesas Electronics Corporation 2SK1761(E)

    MOSFET
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    Chip1Stop 2SK1761(E) 600
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    • 100 $6.61
    • 1000 $6.38
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    Renesas Electronics Corporation 2SK1762E

    Trans MOSFET N-CH Si 250V 12A 3-Pin(3+Tab) TO-220FM Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SK1762E 495
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    • 10 $7.87
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    2SK176 Datasheets (85)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK176 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK176 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK176 Hitachi Semiconductor Silicon N-Channel MOS FET, Low Freq. Power Amp Scan PDF
    2SK176 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK176 Unknown FET Data Book Scan PDF
    2SK176 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK176 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK176 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK176 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2SK1760 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1760 NEC Semiconductor Selection Guide Original PDF
    2SK1760 NEC Original PDF
    2SK1760 Unknown FET Data Book Scan PDF
    2SK1760 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK1760 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1760 NEC MOS Field Effect Power Transistor Scan PDF
    2SK1761 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1761 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1761 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1761 Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK176 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1761

    Abstract: DSA003639
    Text: 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


    Original     		PDF 2SK1761 ADE-208-1315 O-220AB 2SK1761 DSA003639

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3


    Original     		PDF 2SK1761 O-220AB D-85622 Hitachi DSA002780

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1761 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline TO-220AB


    Original     		PDF 2SK1761 O-220AB D-85622 Hitachi DSA002748

    dc-dc converter hitachi

    Abstract: 2SK1764 2SK975 DSA003639
    Text: 2SK1764 Silicon N-Channel MOS FET ADE-208-1317 Z 1st. Edition Mar. 2001 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter


    Original     		PDF 2SK1764 ADE-208-1317 dc-dc converter hitachi 2SK1764 2SK975 DSA003639

    2SK1764KYTR

    Abstract: 2sk1764 2SK1764KYTL-E 2SK1764KYTR-E SC-62 MARKING IS KY 2SK1764KYTLE 2SK1764KYTL
    Text: 2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 Previous: ADE-208-1317 Rev.2.00 Sep 07, 2005 Application • Low frequency amplifier • High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source


    Original     		PDF 2SK1764 REJ03G0970-0200 ADE-208-1317) PLZZ0004CA-A 2SK1764KYTR 2sk1764 2SK1764KYTL-E 2SK1764KYTR-E SC-62 MARKING IS KY 2SK1764KYTLE 2SK1764KYTL

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter


    Original     		PDF 2SK1764 Hitachi DSA00279

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1764 Silicon N-Channel MOS FET November 1996 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SK1764 D-85622 Hitachi DSA002748

    2SK1764

    Abstract: marking ky fet FET marking ky
    Text: 2SK1764 Silicon N Channel MOS FET Application UPAK Low frequency amplifier High speed switching 3 2 1 4 Features • Low on–resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switchingregulator, DC–DC


    Original     		PDF 2SK1764 2SK1764 marking ky fet FET marking ky

    2SK1762

    Abstract: 2SK1761 DSA0010892
    Text: 2SK1762 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 3 1. 1. Gate


    Original     		PDF 2SK1762 220FM 2SK1762 2SK1761 DSA0010892

    Hitachi DSA002780

    Abstract: wm60
    Text: 2SK1762 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 1 2 3


    Original     		PDF 2SK1762 O-220FM D-85622 Hitachi DSA002780 wm60

    2SK1762

    Abstract: 2SK1762-E PRSS0003AD-A
    Text: 2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 Previous: ADE-208-1316 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SK1762 REJ03G0969-0200 ADE-208-1316) PRSS0003AD-A O-220FM) 2SK1762 2SK1762-E PRSS0003AD-A

    2sk1760

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT POWER TRANSISTOR 2SK1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION


    OCR Scan     		PDF 2SK1760 2SK1760 IEI-1209) MEI-1202 TEA-1035

    2SK1763

    Abstract: 44TB2 Hitachi Scans-001
    Text: blE ]> • 44TbEG5 ÜQlBSEb fl47 « H I T 4 2SK1763 , 2SK1763 s Silicon N Channel MOS FET HITACHI/(OPTOELECTRONICS) Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — can be driven from


    OCR Scan     		PDF 44TbEG5 2sk1763 2SK1763 44TB2 Hitachi Scans-001

    2SK1769

    Abstract: 8 A diode Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: TOSHIBA Discrete Semiconductors 2SK1769 Industrial Applications Straight Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS II 7.2 M AX High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1769 300hA 20ki2) GD21bbl 2SK1769 8 A diode Field Effect Transistor Silicon N Channel MOS vdss 600

    2SK1760

    Abstract: 2SK176 MEI-1202 TEA-1035 TC-2437
    Text: DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1760 is N-channel MOS Field Effect Transistor de­ signed for high voltage switching applications. FEATURES • Low On-state Resistance


    OCR Scan     		PDF 2SK1760 IEI-1209) 2SK176 MEI-1202 TEA-1035 TC-2437

    HITACHI 2SJ56

    Abstract: 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2SJ55 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56
    Text: blE D • 4MTbEDS DGlEfi^fl 2SJ55,2SJ56 &Z3 MHIT4 HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET LOW FREQU EN CY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.


    OCR Scan     		PDF 2SJ55 2SJ56 2SK175, 2SK176 HITACHI 2SJ56 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56

    Untitled

    Abstract: No abstract text available
    Text: 2SK1762 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline


    OCR Scan     		PDF 2SK1762 O-220FM

    2SK1762

    Abstract: No abstract text available
    Text: 2SK1762 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary breakdown Suitable for switchingregulator, DC -D C converter Outline TO-220FM


    OCR Scan     		PDF 2SK1762 O-220FM 588ittance 2SK1762

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1768 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M OSType I?-7t-MOS III High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r DS(ON) = 0-055£2 (Typ .)


    OCR Scan     		PDF 2SK1768 Te-25* T72SD

    K1761

    Abstract: No abstract text available
    Text: 2SK1761 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline


    OCR Scan     		PDF 2SK1761 K1761

    Untitled

    Abstract: No abstract text available
    Text: ‘tM'K.gOS 0013533 Tfi? » H i m 2SK1764 HITACHI/ OPTOELECTRONICS Silicon N Channel MOS FET Application blE I UPAK Low frequency amplifier High speed switching Features • Low on-resistance • High speed switching • Suitable for switchingregulator, DC-DC


    OCR Scan     		PDF 2SK1764 QD13537 DD1353fl

    2sk17

    Abstract: Transistor TOSHIBA 2SK 2SK1769
    Text: TOSHIBA 2SK1769 Industrial Applications S tra ig h t Field Effect Transistor U n it in m m Silicon N Channel MOS Type tc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F eatures • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1769 10/iS 2sk17 Transistor TOSHIBA 2SK 2SK1769

    2SJ56 2sk176

    Abstract: HITACHI 2SJ56 2SJ56 2SK176 2Sk175 HITACHI 2SK175 DIODE T25 4 lo 2SJ55 2Sk176 HITACHI 2SJ56 HITACHI
    Text: blE D • MMTbEOS DDlEflTfl ATT ■ H I T M 7 ^ 3 * ? 2SJ55,2SJ56~ &2 S H I T A C H I / O P T O E L E C T R O N I C S SILICON P-CHANNEL MOS F ET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • Excellent Frequency Response.


    OCR Scan     		PDF 2SK175, 2SK176 2SJ55 2SJ56 441b205 2SJ56 2sk176 HITACHI 2SJ56 2SJ56 2SK176 2Sk175 HITACHI 2SK175 DIODE T25 4 lo 2Sk176 HITACHI 2SJ56 HITACHI

    DSE 130 -12A

    Abstract: 2SK1768 2sk17
    Text: TOSHIBA 2SK1768 Field Effect Transistor In d u s tria l A p p lic a t io n s U n it in m m Silicon N Channel MOS Type L2-7t-MOS III High Speed, High Current Switching Applications F e a tu r e s • Low Drain-Source ON Resistance • ^DS(ON) = 0.055i2 (Typ.)


    OCR Scan     		PDF 2SK1768 055i2 --12A Tc-25* DSE 130 -12A 2SK1768 2sk17