Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK216 Search Results

    2SK216 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK216-E Renesas Electronics Corporation N Channel MOSFET Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SK216 Price and Stock

    Rochester Electronics LLC 2SK2161

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2161 Bulk 325
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.92
    • 10000 $0.92
    Buy Now

    Rochester Electronics LLC 2SK2169-AZ

    N-CHANNEL SMALL SIGNAL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2169-AZ Bulk 2,959
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1
    Buy Now

    Rochester Electronics LLC 2SK2167-TD-E

    NCH 10V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2167-TD-E Bulk 666
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.45
    • 10000 $0.45
    Buy Now

    onsemi 2SK2169-AZ

    2SK2169-AZ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK2169-AZ 177,500 3,619
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1036
    Buy Now
    Rochester Electronics 2SK2169-AZ 35,000 1
    • 1 $0.0975
    • 10 $0.0975
    • 100 $0.0917
    • 1000 $0.0829
    • 10000 $0.0829
    Buy Now

    onsemi 2SK2161

    2SK2161
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK2161 39,850 360
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.9439
    • 10000 $0.9439
    Buy Now
    2SK2161 837 360
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.9439
    • 10000 $0.9439
    Buy Now
    Rochester Electronics 2SK2161 3,837 1
    • 1 $0.8883
    • 10 $0.8883
    • 100 $0.835
    • 1000 $0.7551
    • 10000 $0.7551
    Buy Now

    2SK216 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK216 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK216 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK216 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK216 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK216 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK216 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK216 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK216 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK216 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK216 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK216 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK216 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK216 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK216 Unknown FET Data Book Scan PDF
    2SK2160 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK2160 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SK2160 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK2160 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SK2161 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK2161 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    Original
    PDF 2SK2166-01R

    K2162

    Abstract: 2SJ338 2SK2162
    Text: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。


    Original
    PDF 2SK2162 2SJ338 SC-64 K2162 2002/95/EC) K2162 2SJ338 2SK2162

    2SK213 2Sk214

    Abstract: 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575
    Text: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • 3 Suitable for direct mounting High forward transfer admittance


    Original
    PDF 2SK213, 2SK214, 2SK215, 2SK216 220AB 2SJ76, 2SK213 2SK214 2SK215 2SK213 2Sk214 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575

    toshiba audio power amplifier

    Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 toshiba audio power amplifier Audio Power Amplifier TOSHIBA 2SJ338 2SK2162

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original
    PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    Untitled

    Abstract: No abstract text available
    Text: 2SK2166-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 Applications Motor controllers General purpose power amplifier DC-DC converters ±0.3 3.2 +0.3 ±0.3 2.3 ±0.2


    Original
    PDF 2SK2166-01R

    2SK2166-01R

    Abstract: No abstract text available
    Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    Original
    PDF 2SK2166-01R 2SK2166-01R

    2SJ76

    Abstract: Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214
    Text: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting


    Original
    PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 O-220AB 2SJ76 Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: Toshiba 2SJ toshiba marking code transistor
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm


    Original
    PDF 2SK2162 2SJ338 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ toshiba marking code transistor

    2SK2165-01

    Abstract: No abstract text available
    Text: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    Original
    PDF 2SK2165-01 2SK2165-01

    2SK216-E

    Abstract: 2SK215 2SK216 2SK213 2SK214 2SJ76 PRSS0004AC-A 2SK214-E 2SK213-e 2SK216E
    Text: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 Previous: ADE-208-1241 Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features


    Original
    PDF 2SK213, 2SK214, 2SK215, 2SK216 REJ03G0903-0200 ADE-208-1241) 2SJ76, PRSS0004AC-A O-220AB) 2SK216-E 2SK215 2SK216 2SK213 2SK214 2SJ76 PRSS0004AC-A 2SK214-E 2SK213-e 2SK216E

    REJ03G0122-0200

    Abstract: 2SK214 2SJ78 2SJ76 2SJ77 2SJ79 2SK213 2SK215 2SK216 PRSS0004AC-A
    Text: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 Previous: ADE-208-1179 Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216


    Original
    PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 REJ03G0122-0200 ADE-208-1179) 2SK213, 2SK214, 2SK215, 2SK216 REJ03G0122-0200 2SK214 2SJ78 2SJ76 2SJ77 2SJ79 2SK213 2SK215 2SK216 PRSS0004AC-A

    2SJ338

    Abstract: 2SK2162 K2162
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage


    Original
    PDF 2SK2162 2SJ338 2SJ338 2SK2162 K2162

    2SK2167

    Abstract: No abstract text available
    Text: Ordering number:ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2167] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5


    Original
    PDF ENN4631 2SK2167 2SK2167] 25max 2SK2167

    2SK2169

    Abstract: 2087a ITR02550 ITR02551 ITR02552 ITR02553 ITR02554 ITR02555 ITR02556 ITR02557
    Text: 注文コード No. N 4 5 5 6 2SK2169 No. 三洋半導体ニューズ 2SK2169 特長 N4556 70999 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original
    PDF 2SK2169 N4556 200mA 200mA, ITR02555 ITR02554 ITR02557 ITR02558 2SK2169 2087a ITR02550 ITR02551 ITR02552 ITR02553 ITR02554 ITR02555 ITR02556 ITR02557

    2SK2161

    Abstract: No abstract text available
    Text: Ordering number:ENN4601A N-Channel Silicon MOSFET 2SK2161 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A


    Original
    PDF ENN4601A 2SK2161 2SK2161] O-220ML 2SK2161

    2SK2167

    Abstract: BX-0113
    Text: Ordering number:ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2167] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5


    Original
    PDF ENN4631 2SK2167 2SK2167] 25max 2SK2167 BX-0113

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)


    OCR Scan
    PDF 2SK2162 2SJ338

    Untitled

    Abstract: No abstract text available
    Text: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting


    OCR Scan
    PDF 2SJ76 2SJ77 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 -220AB 2SJ76,

    1600 v mosfet

    Abstract: No abstract text available
    Text: 2SK2166-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ _ - FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power


    OCR Scan
    PDF 2SK2166-01 1600 v mosfet

    Untitled

    Abstract: No abstract text available
    Text: 2SK2166-01R FUJI POWER M OS-FET N-OHANIMEL SILICON POWER MOS-FET - F A P - I I I A S E R I E S • reatures Outline Drawings • I- igh cu rre n t • L dw on-resistance • f\o secondary breakdown • L jw d riving p o w e r


    OCR Scan
    PDF 2SK2166-01R

    CQ 419

    Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
    Text: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof


    OCR Scan
    PDF 2SK2165-01 SC-65 CQ 419 oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165

    2SK2169

    Abstract: 5n80 EN4556
    Text: Ordering num ber:E N 4556 _ 2SK2169 No.4556 N-Channel MOS Silicon FET I Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b s o lu te M ax im u m R a tin g s a tT a = 25°C


    OCR Scan
    PDF EN4556 2SK2169 5n80

    2SJ76

    Abstract: 2SJ79 2SJ77 2SJ78 2SK213 2SK214 2SK215 2SK216 Hitachi Scans-001 PC-H-130
    Text: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting


    OCR Scan
    PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 O-220AB 2SJ76 2SJ79 2SJ77 2SJ78 2SK213 2SK214 2SK215 2SK216 Hitachi Scans-001 PC-H-130