parallel MOSFET Transistors
Abstract: 2SK2459N 200v 5A mosfet 2SK245 mosfet 200v mosfet mosfet 5a Transistors
Text: Transistors Switching 200V, 5A 2SK2459N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel
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2SK2459N
parallel MOSFET Transistors
2SK2459N
200v 5A mosfet
2SK245
mosfet
200v mosfet
mosfet 5a
Transistors
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Untitled
Abstract: No abstract text available
Text: 2SK2459 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)
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2SK2459
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2SK2452
Abstract: 2SK245-2
Text: 2SK245-2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)125þ I(GSS) Max. (A)2n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK245-2
2SK2452
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2SK245
Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H
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2SK201
2SK203
2SK205
2SK208
2SK209
2SK210
2SK211
2SK212
2SK213
2SK214
2SK245
2SK270
2SK243
2sk205
2SK239A
2SK224
2SK214
2SK259H
2Sk226
2SK240
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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rkm 21 transistor
Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Text: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts
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2SK2792
2SK2503
RK7002
rkm 21 transistor
RK7002 equivalent
2SK3016
rkm sot-23
rkm transistor
sot23 a02 Transistor
rkm 45 transistor
2SK2460
rkm 15 transistor
RKM SOT
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2SK245
Abstract: 10C3 251C 2SK2459N CL05 2SK2459
Text: Transistors Switching 200V, 5A 2SK2459N •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at V g ss = ±30V. 5) Easily designed drive circuits.
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2SK2459N
Pwi10/iS,
2SK245
10C3
251C
2SK2459N
CL05
2SK2459
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2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
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2SK2262
2SK2294
-220FN
2SK2792
2SK2459N
2SK2460N
0-220FN
2SK2713
2SK2793
2SK2540
2SD2576
2sd2396
TA143E
2SK2459N
2SD 92 M
C2N3904
2SB1569A
2SD2061
2SD1189F
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Untitled
Abstract: No abstract text available
Text: Transistors Switching 200V, 5A 2SK2459N • F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce vo lta g e gu a ra n te e d at V gss = ± 3 0 V . 5) Easily designed drive circuits.
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2SK2459N
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mosfet ftr 03
Abstract: FTR 02 2SK2459N SC-75A mosfet 4501 mosfet 2sk* to-92
Text: Transistors Switching 200V, 5A 2SK2459N •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vqss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)
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2SK2459N
O-22QFN
O-220FP
O-220
O-126
O-220,
0Dlb713
O-220FN
mosfet ftr 03
FTR 02
2SK2459N
SC-75A
mosfet 4501
mosfet 2sk* to-92
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2SK2459
Abstract: 2SK2459N
Text: Transistors Switching 200V, 5A 2SK2459N •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) G ate-source voltage guaranteed at Voss = ± 3 0 V . 5) Easily designed drive circuits.
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2SK2459N
O-220FN
2SK2459
2SK2459N
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Text: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2SC2021LJNE)
2SB821
2SA937ALN
\2SC2021LN
2SB1276
2021M
2SA937AM
2SB737
2SD786
2SA1137
C2021M
B1568
mosfet ftr 03
2SC1B15
2SA1904
Mosfet FTR 03-E
2SC2021E
2SC1740 transistor
2SK2295
2S0240
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2SC2021LN
2SB821
2SB1276
2SC2021MLN
O-92L
O-92LS
2SB737
V2SD786
2SA1137
2SC1740
2SC1740 transistor
A1757
B1130AM
2SD2061F
2SD1466
2SC5083
B1236A
mos-fet darlington
2sc4721
transistor 2sa1819
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2n4401 331
Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598
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2N3904
2N3906
2N4401
2N4403
2SA821S.
2SA830S.
2SA854S.
2SB822
2n4401 331
2n4403 331
2n3904 409
2n3904 331
k 2715
2n3906 331
1352s
MPSA06 346
2N584
C847B
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2SK2296
Abstract: 2sk2450 K2460 2SK2295 22BW
Text: POWER M ÜSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors
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2SK2262
2SK1976
O-22QFP
O-247
O-22QFP
2SK2296
2sk2450
K2460
2SK2295
22BW
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2SK2295
Abstract: 2SK2294 2SK2460 2SK2176 2SK2430 2SK2429 2SK2293 2sk2298 2SK2104 transistor 2sk
Text: POWER MOSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placement. 2. MOSFETs operating from 4 volts These MOSFETs can be directly driven by an IC, saving counts of components buffer transistors
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2SK2262
2SK1976
O-22QFP
O-247
2SK2295
2SK2294
2SK2460
2SK2176
2SK2430
2SK2429
2SK2293
2sk2298
2SK2104
transistor 2sk
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2SK2295
Abstract: 2SK2460 2SK2459 2SK2299
Text: POWER MQSFET 1. Can be used with automatic placement machine. Available in various packages with taping for automatic placem ent. 2. MOSFETs operating from 4 volts These M OSFETs can be directly driven by an IC, saving counts of components buffer transistors
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T0-220FP
O-247
2SK2295
2SK2460
2SK2459
2SK2299
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