2SK2311

Contextual Info: TOSHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-M O S V 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AN D SWITCHING INDUSTRIAL APPLICATIONS Unit in mm TO-220FL REGULATOR APPLICATIONS

2SK2311

Abstract: 339ah
Contextual Info: TOSHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING 10.3MAX. REGULATOR APPLICATIONS

K2311

Abstract: 2SK2311
Contextual Info: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)

Contextual Info: TOSHIBA 2SK2311 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2- tt-M O S V 2SK2311 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER A N D SW ITCHING 10.3M AX.

k2311

Abstract: 339 marking code transistor 2SK2311
Contextual Info: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) High forward transfer admittance

2SK2311

Contextual Info: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Chopper Regulator, DC−DC Converter and Switching Regulator Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)

Contextual Info: TOSHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-,t -M O SV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING 10JMAX REGULATOR APPUCATIONS

2SK2311

Abstract: K2311
Contextual Info: 2SK2311 東芝電界効果トランジスタ シリコンNチャネルMOS形 L2-π-MOSV 2SK2311 ○ リレー駆動DC-DC コンバータ用 ○ スイッチレギュレータ 単位: mm • 4 V 駆動です。 • オン抵抗が低い。 : RDS (ON) = 36 mΩ (標準)

2SK2311

Abstract: K2311
Contextual Info: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)

CDVJ

Abstract: 2SK2311
Contextual Info: TOSHIBA 2SK2311 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2SK2311 INDUSTRIAL APPLICATIONS U nit in m m HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS T 0 -2 2 0 F L CHOPPER REGULATOR, DC-DC CONVERTER A N D SW ITCHING

L339

Abstract: D-A53
Contextual Info: TO SHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING INDUSTRIAL APPLICATIONS TO-22QFL Unit in mm 10.3MAX. REGULATOR APPLICATIONS

K2311

Abstract: 2SK2311
Contextual Info: 2SK2311 東芝電界効果トランジスタ シリコンNチャネルMOS形 L2-π-MOSV 2SK2311 ○ リレー駆動DC-DC コンバータ用 ○ スイッチレギュレータ 単位: mm • 4 V 駆動です。 • オン抵抗が低い。 : RDS (ON) = 36 mΩ (標準)

2SK2311

Contextual Info: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Chopper Regulator, DC−DC Converter and Switching Regulator Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) High forward transfer admittance

Contextual Info: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

Jab zener

Contextual Info: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs