K2311
Abstract: 2SK2311
Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)
|
Original
|
PDF
|
2SK2311
K2311
2SK2311
|
k2311
Abstract: 339 marking code transistor 2SK2311
Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) High forward transfer admittance
|
Original
|
PDF
|
2SK2311
k2311
339 marking code transistor
2SK2311
|
2SK2311
Abstract: No abstract text available
Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Chopper Regulator, DC−DC Converter and Switching Regulator Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)
|
Original
|
PDF
|
2SK2311
2SK2311
|
2SK2311
Abstract: K2311
Text: 2SK2311 東芝電界効果トランジスタ シリコンNチャネルMOS形 L2-π-MOSV 2SK2311 ○ リレー駆動DC-DC コンバータ用 ○ スイッチレギュレータ 単位: mm • 4 V 駆動です。 • オン抵抗が低い。 : RDS (ON) = 36 mΩ (標準)
|
Original
|
PDF
|
2SK2311
2-10S1B
2SK2311
K2311
|
2SK2311
Abstract: K2311
Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)
|
Original
|
PDF
|
2SK2311
2SK2311
K2311
|
K2311
Abstract: 2SK2311
Text: 2SK2311 東芝電界効果トランジスタ シリコンNチャネルMOS形 L2-π-MOSV 2SK2311 ○ リレー駆動DC-DC コンバータ用 ○ スイッチレギュレータ 単位: mm • 4 V 駆動です。 • オン抵抗が低い。 : RDS (ON) = 36 mΩ (標準)
|
Original
|
PDF
|
2SK2311
2-10S1B
K2311
2SK2311
|
2SK2311
Abstract: No abstract text available
Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Chopper Regulator, DC−DC Converter and Switching Regulator Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) High forward transfer admittance
|
Original
|
PDF
|
2SK2311
2SK2311
|
Untitled
Abstract: No abstract text available
Text: 2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2311 Unit: mm Chopper Regulator, DC−DC Converter and Switching Regulator Applications z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)
|
Original
|
PDF
|
2SK2311
|
5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
PDF
|
|
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
|
Original
|
PDF
|
|
2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
|
Original
|
PDF
|
BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
|
2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
|
Original
|
PDF
|
BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
|
2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
|
Original
|
PDF
|
2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
|
IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional
|
Original
|
PDF
|
device2176
r14153
CR108/D
IRF9310
mosfet cross reference
korea IRFZ44
IRF 949
replacement BUZ 36
philips master replacement guide
2SK2146
IRF540 substitution
MOSFET TOSHIBA 2SK
IRF510 substitution
|
|
|
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
|
Original
|
PDF
|
AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
|
TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
PDF
|
BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
|
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
PDF
|
2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
|
2SK2311
Abstract: No abstract text available
Text: TOSHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-M O S V 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AN D SWITCHING INDUSTRIAL APPLICATIONS Unit in mm TO-220FL REGULATOR APPLICATIONS
|
OCR Scan
|
PDF
|
2SK2311
2SK2311
|
2SK2311
Abstract: 339ah
Text: TOSHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING 10.3MAX. REGULATOR APPLICATIONS
|
OCR Scan
|
PDF
|
2SK2311
O-22QFL
339ah
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2311 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2- tt-M O S V 2SK2311 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER A N D SW ITCHING 10.3M AX.
|
OCR Scan
|
PDF
|
2SK2311
T0-220FL
36mf2
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-,t -M O SV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING 10JMAX REGULATOR APPUCATIONS
|
OCR Scan
|
PDF
|
2SK2311
O-220FL
10JMAX
--25A,
--25C1
|
CDVJ
Abstract: 2SK2311
Text: TOSHIBA 2SK2311 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2SK2311 INDUSTRIAL APPLICATIONS U nit in m m HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS T 0 -2 2 0 F L CHOPPER REGULATOR, DC-DC CONVERTER A N D SW ITCHING
|
OCR Scan
|
PDF
|
2SK2311
36mil
O-22QFL
20kil)
CDVJ
2SK2311
|
L339
Abstract: D-A53
Text: TO SHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING INDUSTRIAL APPLICATIONS TO-22QFL Unit in mm 10.3MAX. REGULATOR APPLICATIONS
|
OCR Scan
|
PDF
|
2SK2311
O-22QFL
20kfl)
j--25D
339//H
L339
D-A53
|
Jab zener
Abstract: No abstract text available
Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)
|
OCR Scan
|
PDF
|
T0-220
2SJ334
2SK2312
Packag55
2SK1379
Jab zener
|
