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Panasonic Electronic Components 2SK303100L MOSFET N-CH 100V 15A U-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK303100L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.88101	Buy Now
	2SK303100L	Cut Tape			1	1 $1.2 10 $1.2 100 $1.2 1000 $1.2 10000 $1.2	Buy Now
	2SK303100L	Digi-Reel			1	1 $1.2 10 $1.2 100 $1.2 1000 $1.2 10000 $1.2	Buy Now
Panasonic Electronic Components 2SK303000L MOSFET N-CH 100V 8A U-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK303000L	Digi-Reel			1	1 $1.15 10 $1.15 100 $1.15 1000 $1.15 10000 $1.15	Buy Now
	2SK303000L	Cut Tape			1	1 $1.15 10 $1.15 100 $1.15 1000 $1.15 10000 $1.15	Buy Now
	2SK303000L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.72779	Buy Now
Rochester Electronics LLC 2SK303-3-TB-E NCH J-FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK303-3-TB-E	Bulk			1,480	1 - 10 - 100 - 1000 - 10000 $0.2	Buy Now
onsemi 2SK303-3-TB-E 2SK303 - N-Channel J-FET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SK303-3-TB-E		18,000		1	1 $0.195 10 $0.195 100 $0.1833 1000 $0.1658 10000 $0.1658	Buy Now
SANYO Semiconductor Co Ltd 2SK303V3TA Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK303V3TA		3,985			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK303 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK303	Kexin	N-Channel Junction Silicon FET	Original	PDF
2SK303	Sanyo Semiconductor	General-purpose amplifiers, impedance converters	Original	PDF
2SK303	TY Semiconductor	N-Channel Junction Silicon FET - SOT-23	Original	PDF
2SK303	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK303	Unknown	General Purpose Transistors	Scan	PDF
2SK303	Unknown		Scan	PDF
2SK303	Unknown	SMD, Silicon N-Channel JFET	Scan	PDF
2SK303	Unknown	FET Data Book	Scan	PDF
2SK303	Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples	Scan	PDF
2SK303	Sanyo Semiconductor	Small Signal Junction FETS / MOSFETS	Scan	PDF
2SK303	Sanyo Semiconductor	CP Type Transistors	Scan	PDF
2SK303	Sanyo Semiconductor	Small Signal FETs	Scan	PDF
2SK3030	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3030	Panasonic	N-Channel Power F-MOS FET	Original	PDF

2SK3030	Panasonic	Silicon N-Channel Power MOSFET	Original	PDF
2SK303000L	Panasonic	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A UG-1	Original	PDF
2SK3031	Kexin	N-Channel Power F-MOSFET	Original	PDF
2SK3031	Panasonic	N-Channel Power F-MOS FET	Original	PDF
2SK3031	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3031	Panasonic	Silicon N-Channel Power MOSFET	Original	PDF

2SK303 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK303V4 Abstract: 2SK303V3 2sK303L 2SK303 Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 Preliminary JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion * Halogen Free	Original	2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303-V2 2SK303-V3 2SK303-V4 2SK303-V5 QW-R206-071 2SK303V4 2SK303V3 2sK303L 2SK303	PDF
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3036	PDF
2SK3034 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3034 2SK3034	PDF
5A diode Abstract: 2SK3037 Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037 5A diode 2SK3037	PDF
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3032	PDF
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm	Original	2SK3035	PDF
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number	Original	2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-AQ3-R 2SK303G-x-AQ3-R OT-723	PDF
2SK3033 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3033 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3033 2SK3033	PDF
2SK3030 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3030 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3030 2SK3030	PDF
2SK3032 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3032 2SK3032	PDF
K3030 Abstract: 2SK3030 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3030 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 1 3 0.75±0.1 2.3±0.1 4.6±0.1 1 ■ Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SK3030 SC-63 K3030 2SK3030	PDF
2SK3036 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3036 2SK3036	PDF
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3034	PDF

Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS  FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion  ORDERING INFORMATION	Original	2SK303 2SK303G-xx-AE3-R 2SK303G-xx-A3C-R 2SK303G-xx-AQ3-R 2SK303L-xx-T92-B 2SK303G-xx-T92-B 2SK303L-xx-T92-K 2SK303G-xx-T92-K OT-23 OT-113S	PDF
2SK303L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number	Original	2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-T92-B 2SK303G-x-T92-B 2SK303L-x-T92-K 2SK303L	PDF
2SK3036 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3036 2SK3036	PDF
K3031 Abstract: 2SK3031 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 0.75±0.1 2.3±0.1 4.6±0.1 1 ■ Absolute Maximum Ratings TC = 25°C	Original	2002/95/EC) 2SK3031 SC-63 K3031 2SK3031	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 Unit V V A A mJ W 2 (5.5) 1 Parameter Symbol Rating Drain-source surrender voltage VDSS 100	Original	2002/95/EC) 2SK3031 SC-63 K3031	PDF
2SK3031 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3031 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3031 2SK3031	PDF
2SK3034 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3034 2SK3034	PDF
2SK3036 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm	Original	2SK3036 2SK3036	PDF
2SK303 Abstract: No abstract text available Text: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j\|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and	OCR Scan	EN856F 2SK303 2SK303	PDF

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2SK303 Price and Stock

Panasonic Electronic Components 2SK303100L

Panasonic Electronic Components 2SK303000L

Rochester Electronics LLC 2SK303-3-TB-E

onsemi 2SK303-3-TB-E

SANYO Semiconductor Co Ltd 2SK303V3TA

2SK303 Datasheets (38)

2SK303 Datasheets Context Search

2SK303V4

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2SK3034

5A diode

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2SK3033

2SK3030

2SK3032

K3030

2SK3036

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2SK303L

2SK3036

K3031

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2SK3031

2SK3034

2SK3036

2SK303