2SK303 Search Results
2SK303 Price and Stock
Rochester Electronics LLC 2SK303-3-TB-ENCH J-FET |
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2SK303-3-TB-E | Bulk | 18,000 | 1,214 |
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Buy Now | |||||
Panasonic Electronic Components 2SK303100LMOSFET N-CH 100V 15A U-G1 |
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2SK303100L | Digi-Reel | 1 |
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Panasonic Electronic Components 2SK303000LMOSFET N-CH 100V 8A U-G1 |
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2SK303000L | Reel | 3,000 |
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Buy Now | ||||||
onsemi 2SK303-3-TB-E2SK303-3-TB-E |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK303-3-TB-E | 15,000 | 1,263 |
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2SK303-3-TB-E | 18,000 | 1 |
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SANYO Semiconductor Co Ltd 2SK303V3TAElectronic Component |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK303V3TA | 3,985 |
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2SK303 Datasheets (38)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
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| 2SK303 | Kexin | N-Channel Junction Silicon FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | General-purpose amplifiers, impedance converters | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | TY Semiconductor | N-Channel Junction Silicon FET - SOT-23 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | Shortform Transistor PDF Datasheet | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | General Purpose Transistors | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | Scan | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | SMD, Silicon N-Channel JFET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | Sanyo Datasheets, Cross References and Circuit Examples | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | Small Signal Junction FETS / MOSFETS | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | CP Type Transistors | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303 | Sanyo Semiconductor | Small Signal FETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3030 |
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Silicon N-Channel Power F-MOS FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3030 |
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N-Channel Power F-MOS FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SK3030 |
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Silicon N-Channel Power MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK303000L |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A UG-1 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 | Kexin | N-Channel Power F-MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 |
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N-Channel Power F-MOS FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 |
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Silicon N-Channel Power F-MOS FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3031 |
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Silicon N-Channel Power MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK303 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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2SK303V4
Abstract: 2SK303V3 2sK303L 2SK303
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Original |
2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303-V2 2SK303-V3 2SK303-V4 2SK303-V5 QW-R206-071 2SK303V4 2SK303V3 2sK303L 2SK303 | |
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Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3036 | |
2SK3034Contextual Info: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3034 2SK3034 | |
5A diode
Abstract: 2SK3037
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Original |
2SK3037 5A diode 2SK3037 | |
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Contextual Info: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3032 | |
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Contextual Info: Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm |
Original |
2SK3035 | |
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Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3037 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number |
Original |
2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-AQ3-R 2SK303G-x-AQ3-R OT-723 | |
2SK3033Contextual Info: Power F-MOS FETs 2SK3033 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3033 2SK3033 | |
2SK3030Contextual Info: Power F-MOS FETs 2SK3030 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3030 2SK3030 | |
2SK3032Contextual Info: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3032 2SK3032 | |
K3030
Abstract: 2SK3030
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Original |
2002/95/EC) 2SK3030 SC-63 K3030 2SK3030 | |
2SK3036Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3036 2SK3036 | |
2SK303Contextual Info: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and |
OCR Scan |
EN856F 2SK303 2SK303 | |
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4A diode
Abstract: 2SK3030
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Original |
2SK3030 4A diode 2SK3030 | |
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Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3037 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION |
Original |
2SK303 2SK303G-xx-AE3-R 2SK303G-xx-A3C-R 2SK303G-xx-AQ3-R 2SK303L-xx-T92-B 2SK303G-xx-T92-B 2SK303L-xx-T92-K 2SK303G-xx-T92-K OT-23 OT-113S | |
2SK303LContextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number |
Original |
2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-T92-B 2SK303G-x-T92-B 2SK303L-x-T92-K 2SK303L | |
2SK3036Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3036 2SK3036 | |
K3031
Abstract: 2SK3031
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Original |
2002/95/EC) 2SK3031 SC-63 K3031 2SK3031 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 Unit V V A A mJ W 2 (5.5) 1 Parameter Symbol Rating Drain-source surrender voltage VDSS 100 |
Original |
2002/95/EC) 2SK3031 SC-63 K3031 | |
2SK3031Contextual Info: Power F-MOS FETs 2SK3031 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3031 2SK3031 | |
2SK3034Contextual Info: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage |
Original |
2SK3034 2SK3034 | |
2SK3036Contextual Info: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm |
Original |
2SK3036 2SK3036 | |