noise diode
Abstract: 2a diode noise source diode NC302L microwave receiver "noise diode"
Text: Return to Noise Source Index ST-2A MINI-NOISE DIODES 10 KHZ TO 3 GHZ DESCRIPTION Micronetics' ST-2A Diode with its small, surface mount SOT23 package are ideally suited for medium and high volume
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NC302L
noise diode
2a diode
noise source diode
microwave receiver
"noise diode"
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound
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FMMT491
500mW
FMMT591
AEC-Q101
DS33091
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP2041F 40V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -40V IC = -1A High Continuous Current ICM = -2A Peak Pulse Current Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound
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ZXTP2041F
-500mV
ZXTN2040F
AEC-Q101
DS33721
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Untitled
Abstract: No abstract text available
Text: DSS20200L 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -20V • • IC = -2A Continuous Collector Current • • ICM = -4A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound UL Flammability Classification Rating 94V-0
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DSS20200L
-120mV
DSS20201L
AEC-Q101
J-STD-020
DS31604
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591A 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -40V • • IC = -1A High Continuous Current • • ICM = -2A Peak Pulse Current Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound
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FMMT591A
-500mV
FMMT491A
J-STD-020
DS33105
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Untitled
Abstract: No abstract text available
Text: User's Guide SBOU001A – June 2000 – Revised May 2006 DEM-OPA-SOT-2A Demonstration Fixture 1 Description The DEM-OPA-SOT-2A demonstration fixture is a generic, unpopulated printed circuit board PCB for dual high-speed operational amplifiers in SOT23-8 packages. Figure 1 shows the package pinout for this
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SBOU001A
OT23-8
OT-23-8
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STT2PF60L
Abstract: No abstract text available
Text: STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
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STT2PF60L
OT23-6L
STT2PF60L
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2A SOT23
Abstract: stp6
Text: STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS R DS on ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
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OT23-6L
STT2PF60L
2A SOT23
stp6
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JESD97
Abstract: STT2PF60L drive motor 60v with transistor P channel MOSFET marking code 10 sot23 o811 stp6
Text: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of
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STT2PF60L
OT-23-6L
OT23-6L
JESD97
STT2PF60L
drive motor 60v with transistor P channel MOSFET
marking code 10 sot23
o811
stp6
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STP6
Abstract: STT2PF60L JESD97 MAX4434
Text: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of
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STT2PF60L
OT-23-6L
OT23-6L
STP6
STT2PF60L
JESD97
MAX4434
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ZS20
Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZS20
ZS20 SOT23 MARKING
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
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ZXTN19100CFF
Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP
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ZXTP19100CFF
OT23F,
-100V
120mV
ZXTN19100CFF
D-81541
ZXTN19100CFF
TS16949
ZXTP19100CFF
ZXTP19100CFFTA
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Untitled
Abstract: No abstract text available
Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP
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ZXTP19100CFF
OT23F,
-100V
120mV
ZXTN19100CFF
D-81541
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T1 SOT23-6
Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
T1 SOT23-6
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
marking e1 diode
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zp2 transistor
Abstract: No abstract text available
Text: DSS5240T Features Mechanical Data • BVCEO > -40V • • IC = -2A high Continuous Collector Current • • ICM = -3A Peak Pulse Current Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 •
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DSS5240T
-225mV
730mW
J-STD-020
MIL-STD-202,
DSS4240T
DS31591
zp2 transistor
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT493 100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 100V IC = 1A High Continuous Collector Current Case material: Molded Plastic. “Green” Molding Compound. ICM = 2A Peak Pulse Current
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FMMT493
500mW
J-STD-020
FMMT593
MILSTD-202,
DS33093
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -60V IC = -1A High Continuous Collector Current Case Material: molded plastic, “Green” Molding Compound ICM = -2A Peak Pulse Current
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FMMT591
J-STD-020
FMMT491
AEC-Q101
DS33104
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marking 056
Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
Text: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to
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ZXTP25100BFH
-140V,
-100V
-130mV
ZXTN25100BFH
marking 056
ZXTP25100BFH
ZETEX marking 056 SOT23
ZXTN25100BFH
ZXTP25100BFHTA
ZXTN
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • BVCEO > 120V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current
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FMMT494
500mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS33095
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PPAP
Abstract: FMMT495 FMMT495TA
Text: A Product Line of Diodes Incorporated FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • BVCEO > 150V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current
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FMMT495
500mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS33096
PPAP
FMMT495
FMMT495TA
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FMMT619
Abstract: fmmt720
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation
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FMMT619
625mW
200mV
FMMT720
AEC-Q101
DS33236
FMMT619
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current
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FMMT593
-100V
FMMT493
AEC-Q101
J-STD-020
MIL-STD-202s,
DS33106
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all diodes ratings
Abstract: FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO > 50V IC cont = 2A 625mW Power dissipation Low Equivalent On Resistance
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FMMT619
625mW
OT-23
J-STD-020
DS33236
all diodes ratings
FMMT619TA
SOT23 marking 619
marking 619 sot23
marking 619
FMMT619
led driver sot-23
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TS16949
Abstract: ZXTN25020DFL ZXTN25020DFLTA ZXTP25020DFL MARKING 1A1
Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain
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ZXTN25020DFL
350mW
ZXTP25020DFL
TS16949
ZXTN25020DFL
ZXTN25020DFLTA
ZXTP25020DFL
MARKING 1A1
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