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Honeywell Sensing and Control PX3AN2BF010BSCHX SENSOR 145.04PSIS 1/8"NPT .02A
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DigiKey	PX3AN2BF010BSCHX	Bulk			60	1 - 10 - 100 $47.377 1000 $47.377 10000 $47.377	Buy Now
Honeywell Sensing and Control / MICRO SWITCH PX3AN2BF010BSCHX Industrial Pressure Sensors PX Pressure Sensor, Heavy Duty
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Sager	PX3AN2BF010BSCHX					1 - 10 - 100 - 1000 - 10000 -	Buy Now

2BF010 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SM28F001AX Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm Text: in te i' SM28F001AX 1 MBYTE 512K x 16 CMOS FLASH SIMM High-Performance — 135 ns Maximum Access Time — 14.81 MB/s Read Transfer Rate 100,000 Rewrite Cycles Typical/ Component Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase 16 jjls Typical Word Write	OCR Scan	PDF	SM28F001AX 80-pin --\05flu6enterline SM2BF001AX SM28F001 AX-200 ER-20, ER-24, 28F010 29020 PPH 2222 36 64 mbit static ram simm
ic 4521 function Abstract: 2BF010 DPZ128X32VI Text: DEN SE-PAC 'S MICROSYSTEMS 4 MEGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: The D P Z 1 2 8X 32VI/VIP is a 4 m egabit CMOS FLASH Electrically Erasable and Programmable nonvolatile memory module. The m odule is b u ilt w ith four 128K x 8 FLASH	OCR Scan	PDF	DPZ128X32VI DPZ128X32VIP DPZ128X32VI/VIP DPZ128X32VI/DPZ128X32VIP 250ns 120mA 400nA 2BF010 ic 4521 function
PLD intel Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD Text: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program	OCR Scan	PDF	Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
TN28F010 Abstract: No abstract text available Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	PDF	28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010
Untitled Abstract: No abstract text available Text: in te i A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) Automotive Temperature Range: —40°C to + 125°C Flash Memory Electrical Chlp-Erase — 1 Second Typical Chlp-Erase Qulck-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program	OCR Scan	PDF	A28F010 1024K 32-LEAD AP28F010-120 AP28F010-150 AN28F010-120 AN28F010-150 ER-20, ER-24, RR-60,
2BF010 Abstract: No abstract text available Text: TMS28F010B 1048576-BIT FLASH MEMORY SMJS824A-MAY 1995 - REVISED JUNE 1995 Organization . . . 128K x 8-Bit Flash Memory Pin Compatible With Existing 1-Megabit EPROMs Vqc Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time ’2BF010B-90 90 ns	OCR Scan	PDF	TMS28F010B 1048576-BIT SMJS824A-MAY 2BF010B-90 28F010B-10 28F010B-12 28F010B-15 168-Hour 772S1-1443 2BF010
Untitled Abstract: No abstract text available Text: TMS28F010 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY _ SMJS011A-DECEMBER 1992-flEVISED MARCH 1993 N PACKAGEt Organization . . . 128K x 8-Bit Flash Memory Pin Compatible with Existing 1-Megabit EPROMs	OCR Scan	PDF	TMS28F010 576-BIT SMJS011A-DECEMBER 1992-flEVISED 28F010-10 28F010-12 28F010-15 28F010-17 168-Hour