5383B
Abstract: No abstract text available
Text: 1N 5383B.1N5388B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5383B.
1N5388B
5383B
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Untitled
Abstract: No abstract text available
Text: 1N 5383B.1N5388B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5383B.
1N5388B
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N 5383B.1N5388B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5383B.
1N5388B
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Untitled
Abstract: No abstract text available
Text: 1N 5383B.1N5388B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode
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5383B.
1N5388B
1N5388B
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Untitled
Abstract: No abstract text available
Text: 1N 5347B.1N 5382B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5347B.
5382B
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MAX3580
Abstract: GB20600 APP4258
Text: Maxim > App Notes > Wireless and RF Keywords: max3580, dvb-t, gb20600, tuner, terrestrial, nordig, mbrai Jun 24, 2008 APPLICATION NOTE 4258 Application considerations for the MAX3580 DVB-T tuner By: Bryan Irons Abstract: This application note contains the information necessary for implementing a MAX3580 DVB-T tuner
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max3580,
gb20600,
MAX3580
211kB)
210kB)
MAX3580:
com/an4258
GB20600
APP4258
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5347B
Abstract: No abstract text available
Text: 1N 5347B.1N 5382B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5347B.
5382B
5347B
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OA 10 diode
Abstract: No abstract text available
Text: SK 75 TAE FIHK FIIKP F+IK TOR UV L F F <O- R WE X$> CYEE CZEE HMUVOLJCZ Characteristics Symbol Conditions SEMITOP 2 Thyristor and Diode separated in the same housing SK 75 TAE Target Data Features # $%&' * +,-./0 # 10, -)2,3 &%40*.0/ # 5,(* *2(0-6,2 (07 .-%8(*.%0
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Untitled
Abstract: No abstract text available
Text: 1N 5347B.1N 5382B 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode 9 8 2< : * * 1 &% = ' 7 9 8 > 0 ? 1 @ < A 3 * BC1 @ 2 A
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5347B.
5382B
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K580
Abstract: 5382B i5ij K8/selenium rectifier
Text: 1N 5347B.1N 5382B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 2 : * 8 9 Absolute Maximum Ratings Symbol Conditions Axial lead diode
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5347B.
5382B
5382B
K580
i5ij
K8/selenium rectifier
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Untitled
Abstract: No abstract text available
Text: SK100B SEMITOP 2 Bridge Rectifier DPTU DPPUI D=PU O= S ACC V <6477 %0+4)*.%0? D YCC ALCC D WCC ANCC <R- S WC X$? TZACC>CW TZACC>AN A[CC ABCC TZACC>AB Symbol Conditions Values Units O= R- S WC X$ ACC V OQTU RE¥ S NM X$] AC &RE¥ S AMC X$] AC &RE¥ S NM X$] WILJJJAC &-
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SK100B
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Untitled
Abstract: No abstract text available
Text: SK 95 D SEMITOP 2 Bridge Rectifier COPQ COOQH C=OQ N= R SL T <6477 %0+4)*.%0U C WBB @MBB C WBB @MBB <V- R WB X$U PY SL = BW PY SL = @M @ABB @ABB PY SL = @A Symbol Conditions N= V- R WB X$ NZPQ .^* Values Units SL T VD[ R ML X$¥ @B &VD[ R @LB X$¥ @B &VD[ R ML X$¥ WHKIII@B &-
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Schottky Diode 40V 2A
Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Text: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
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PD72872
SSG-Z-140
GRM39F105Z10PT
TEMSVB21A226M8R
TEMSVB21C106M8R
TESVD21A226M12R
GHM1525B472K250
SLF10145T-471MR47
DSX630G24R576MHZ
NFM4516P13C204F
Schottky Diode 40V 2A
NEC schottky diode product List
CRG16GT
TEMSVB21c106m8r
Schottky Diode B29
capacitor 0.2uf 50v
GRM39F103Z50PT
TEMSVB21
RK73K1JTD
1a4 capacitor
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Untitled
Abstract: No abstract text available
Text: SK 40 DH SEMITOP 3 GSPR GSSRJ G=SR T= U VO W <6477 %0+4)*.%0? G ZFF DMFF G XFF DOFF <Q- U XF Y$? P[ VF =5 FX P[ VF =5 DO D¥FF DEFF P[ VF =5 DE Symbol Conditions Values Units T= Q- U XF Y$ VO W T]PR ^ TQPR QA_ U ON Y$` DF &QA_ U DON Y$` DF &QA_ U ON Y$` DF &-
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spice model solid state relay
Abstract: solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model
Text: SPICE Device Model Si4768CY Vishay Siliconix Si4768CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4768CY N-Channel Synchronous MOSFETs with Break-Before-Make.
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Si4768CY
includ-May-04
12-May-04
spice model solid state relay
solid state relay spice model
swhyste
lambda schematic los-7-15
llc converter spice model
NMOS MODEL PARAMETERS SPICE
relay spice model
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76107d
Abstract: MOSFET 76107D TA76107 ta7610 HUF76107D3S HUF76107D3ST TB334 HUF76107D3 AN7254 AN9321
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76107D3,
HUF76107D3S
76107d
MOSFET 76107D
TA76107
ta7610
HUF76107D3S
HUF76107D3ST
TB334
HUF76107D3
AN7254
AN9321
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swhyste
Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE
Text: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.
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Si4770CY
18-Jul-08
swhyste
TC-165
mosfet 260n
254p
AEI Semiconductors
Si4768CY
diode M7
156n diode
NMOS MODEL PARAMETERS SPICE
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HUF76107P3
Abstract: 76107P AN7254 AN7260 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs File Number 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
76107P
AN7254
AN7260
AN9321
AN9322
TB334
TC298
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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STGD10HF60KD
Abstract: No abstract text available
Text: STGD10HF60KD 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Preliminary data Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Switching losses include diode recovery energy ■ Short-circuit rated
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STGD10HF60KD
STGD10HF60KD
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TC298
Abstract: No abstract text available
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using
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HUF76107P3
TC298
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Untitled
Abstract: No abstract text available
Text: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
30e-3,
1e-12
1e-10
96e-6
1e6/50)
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75344G3, HUF75344P3, HUF75344S3, HUF75344S3S Semiconductor Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75344G3,
HUF75344P3,
HUF75344S3,
HUF75344S3S
O-263AB
O-263AB
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PDF
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76107d
Abstract: TC298
Text: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF76107D3,
HUF76107D3S
HUF76107
76107d
TC298
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PDF
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