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    2H SMD TRANSISTOR Search Results

    2H SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2H SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a56 transistor smd

    Abstract: smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBTA55 CMBTA56 C-120 a56 transistor smd smd marking A56 transistor SMD 2h transistor smd A55 a56 transistor smd datasheet SMD TRANSISTOR MARKING 2h A56 smd transistor CMBTA55 CMBTA56 br a55

    a56 transistor smd

    Abstract: SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA55 CMBTA56 C-120 a56 transistor smd SMD TRANSISTOR MARKING 2h transistor SMD 2h a56 transistor a56 transistor smd datasheet marking .A55 transistor A55 smd marking A56 CMBTA55 CMBTA56

    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS


    Original     		PDF ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C

    2f bc850

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G


    Original     		PDF OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C 2f bc850 BC849 BC849B BC849C BC850 BC850B BC850C

    A56 smd transistor

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H


    Original     		PDF OT-23 CMBTA55 CMBTA56 C-120 A56 smd transistor

    smd marking A56

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transisto r Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA55 CMBTA56 C-120 smd marking A56

    smd transistor 2g

    Abstract: MARKING 25 SMD PNP TRANSISTOR smd transistor 24 sot23 SMD transistor code 24 transistor SMD 2h TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 50 TRANSISTOR SMD CODE PACKAGE SOT23 smd transistor marking code 24 SMD TRANSISTOR MARKING DE
    Text: SMD General Purpose Transistor PNP MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package


    Original     		PDF MMBTA55/MMBTA56 OT-23 OT-23, MIL-STD-202G, MMBTA55 MMBTA56 smd transistor 2g MARKING 25 SMD PNP TRANSISTOR smd transistor 24 sot23 SMD transistor code 24 transistor SMD 2h TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 50 TRANSISTOR SMD CODE PACKAGE SOT23 smd transistor marking code 24 SMD TRANSISTOR MARKING DE

    MMBTA55

    Abstract: MMBTA56
    Text: Transistors IC SMD Type Driver Transistors MMBTA55,MMBTA56 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT-23 package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF MMBTA55 MMBTA56 OT-23 OT-23 MMBTA55 MMBTA56

    COIL metal detector schematic

    Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		PDF STEVAL-IFS004V1 TDE0160 TDE0160, COIL metal detector schematic SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04

    TLP181

    Abstract: opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A
    Text: OPTOELECTRONICS PHOTO COUPLERS OPTO-ISOLATORS SMD DIL TRANSISTOR OUTPUT DIL PACKAGE Manf. Part No. & Order Code CNY17-2 CNY17-3 4N25 4N26 4N35 4N36 PIN OUT A Manufacturer Channels Vishay-Telefunken 1 ch. Toshiba 1 ch. 1 6 2 5 3 4 min. C.T.R. typ. 63% 100%


    Original     		PDF CNY17-2 CNY17-3 3750VRMS 2500VRMS TLP504A TLP504A-2 TLP521-1A TLP521-1 TLP521-2A TLP521-2 TLP181 opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		PDF STEVAL-IFS004V1 TDE0160 TDE0160,

    Transistor SMD 5A6V

    Abstract: No abstract text available
    Text: 1 CC-E Insulation type DC-DC converter Low Voltage Directive • Features R: Horizontally-mounted SMD type FS Vertically-mounted SIP type Symbol for number of outputs S: Single output, D: Dual outputs Nominal output voltage 03: 3.3V, 05: 5V, 12: 12V Nominal input voltage


    Original     		PDF UL60950-1, EN60950-1 ST100S AK-225AES web140630 Transistor SMD 5A6V

    2GM smd

    Abstract: SMD 2GM MMBTA55 MMBTA56
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBTA56 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBTA56 OT-23 500mA 225mW 50MHz 10mAdc) 100mA) 100mAdc, 2GM smd SMD 2GM MMBTA55 MMBTA56

    MMBTA55

    Abstract: MMBTA56 2GM smd SMD 2GM
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBTA55 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBTA55 OT-23 500mA 225mW 50MHz 10mAdc) 100mA) 100mAdc, MMBTA55 MMBTA56 2GM smd SMD 2GM

    CC1R5-2405

    Abstract: CC10-xxxxSx-E CC6-2405Sx-E 0505sx rc 2403sx CC3-0505SF-E CSA22 EA33-5
    Text: 1/21 Conformity to RoHS Directive DC to DC Converters Insulated Type, Ultra Compact Size, 1.5 to 25W Output, 5-year Warranty Period CC-E Series FEATURES • Compact size(almost half floor space of existing product). • No tantalum capacitor and no aluminum electrolytic capacitor


    Original     		PDF UL60950-1, EN60950-1 ST100S C/10min AK225AES CC1R5-2405 CC10-xxxxSx-E CC6-2405Sx-E 0505sx rc 2403sx CC3-0505SF-E CSA22 EA33-5

    E5 SMD Transistor

    Abstract: CC10-2405SF-E CC1R5-2405 cc6-2403sf-e cc10-2403sf-e CC1R5-1212SF-E CC1R5-0503SF-E CC1R5-1203SF-E CC1R5-2403SF-E CC3-0503SF-E
    Text: 1/17 Conformity to RoHS Directive DC to DC Converters Insulation Type, Ultra Compact Size, 1.5 to 25W Output, 5-year Warranty Period CC-E Series FEATURES • Compact size(almost half floor space of existing product). • No tantalum capacitor and no aluminum electrolytic capacitor


    Original     		PDF UL60950-1, EN60950-1 ST100S C/10min AK225AES E5 SMD Transistor CC10-2405SF-E CC1R5-2405 cc6-2403sf-e cc10-2403sf-e CC1R5-1212SF-E CC1R5-0503SF-E CC1R5-1203SF-E CC1R5-2403SF-E CC3-0503SF-E

    CC10-2405SF-E

    Abstract: 429191ra CC1R5-0503SF-E CC1R5-0505SF-E CC1R5-0512SF-E CC1R5-1203SF-E CC1R5-1205SF-E CC1R5-1212SF-E CC1R5-2403SF-E CC10-2412DF-E
    Text: 1/17 Conformity to RoHS Directive DC to DC Converters Insulation Type, Ultra Compact Size, 1.5 to 25W Output, 5-year Warranty Period CC-E Series FEATURES • Compact size(almost half floor space of existing product). • No tantalum capacitor and no aluminum electrolytic capacitor


    Original     		PDF UL60950-1, EN60950-1 CC1R5-0503SF-EThrough ST100S C/10min AK225AES CC10-2405SF-E 429191ra CC1R5-0503SF-E CC1R5-0505SF-E CC1R5-0512SF-E CC1R5-1203SF-E CC1R5-1205SF-E CC1R5-1212SF-E CC1R5-2403SF-E CC10-2412DF-E

    RF3-50

    Abstract: POWER456
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456

    ADP1043AFB100EVALZ

    Abstract: Analog Devices smd transistor 43B AD1043 CAP SMD 0.47uF 50V 10 CERAMIC X7R 0805 GCM21BR71E105KA56L 61h SMD Transistor AIR FLOW DETECTOR FULL REPORT using led transistor smd 1fh fdd3672
    Text: ADP1043A 100 Watt Evaluation Kit ADP1043AFB100EVALZ PRD1266 FEATURES 100W Full Bridge Topology Advanced Voltage mode Control with integrated Volt-Second Balance I2C serial interface to PC Software GUI Programmable digital filters 7 PWM outputs including Auxiliary PWM


    Original     		PDF ADP1043A ADP1043AFB100EVALZ PRD1266 100Watt ADP1043AFB100EVALZ Analog Devices smd transistor 43B AD1043 CAP SMD 0.47uF 50V 10 CERAMIC X7R 0805 GCM21BR71E105KA56L 61h SMD Transistor AIR FLOW DETECTOR FULL REPORT using led transistor smd 1fh fdd3672

    CMPA801B025

    Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack

    smd code marking 2A sot23

    Abstract: MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23
    Text: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection


    OCR Scan     		PDF OT-89 OT-223 PMBT2907A PMBT3906 PMBT4403 PMBTA55 PMBTA56 PMBTA70 PXT2907A PXT3906 smd code marking 2A sot23 MARKING CODE 3b sot-89 SOT-89 marking 3b marking code SS SOT23 sot-23 npn marking code cr sot143 Marking code 5B marking .H2 sot89 SOT-89 marking 3f 3B SOT-89 smd 2A sot23

    smd transistor 2y

    Abstract: CDIP2-T16 CDIP2-T16 DIMENSIONS cdfp4-f16 3Y SMD 2h smd transistor
    Text: ACS257MS S MAEESS Radiation Hardened Quad 2-Input M ultiplexer with Three-State Outputs November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS257MS is a Quad 2-Channel multiplexer which selects four bits of data from one of two


    OCR Scan     		PDF MIL-PRF-38535 25Micron 100MeV/ IS09000 smd transistor 2y CDIP2-T16 CDIP2-T16 DIMENSIONS cdfp4-f16 3Y SMD 2h smd transistor

    Untitled

    Abstract: No abstract text available
    Text: ACS257MS Semiconductor Radiation Hardened Quad 2-Input M ultiplexer with Three-State Outputs November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS257MS is a Quad 2-Channel multiplexer which selects four bits of data from one of two


    OCR Scan     		PDF ACS257MS MIL-PRF-38535 ACS257MS 25Micron 2390nm 2390nm 525nm ACS257M

    Untitled

    Abstract: No abstract text available
    Text: ACS253MS Semiconductor Radiation Hardened Dual 4-Input Multiplexer with Three-State Outputs November 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS253MS is a Dual 4-Channel Mul­ tiplexer having two common binary control inputs for selecting 1


    OCR Scan     		PDF ACS253MS MIL-PRF-38535 ACS253MS 25Micron