6116 ram
Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum
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L6116
L6116)
L6116-L)
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
6116 ram
memory 6116
6116 ram 2k
24-Pin Plastic DIP
6116 series Static RAMs
6116 static ram
CY6116
ram 6116
6116 memory chip
L6116CC15
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cy7c136
Abstract: EME-6300H CY7C13X
Text: Qualification Report January 1996 QTP# 95152/95487, Version 1.0 2K/1K x 8 Dual-Port Static RAM MARKETING PART NUMBER DEVICE DESCRIPTION CY7C130/131 1K x 8 Dual-Port Static RAM CY7C140/141 1K x 8 Dual-Port Static RAM CY7C132/142 2K X 8 Dual-Port Static RAM
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CY7C130/131
CY7C140/141
CY7C132/142
CY7C136/146
CY7C136
CY7C136-JC
CY7C13X
CY7C14X
cy7c136
EME-6300H
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05028 Spec Title: CY7C128A 2K x 8 Static RAM Sunset Owner: Prashanth Jnanendra pras Replaced by: None CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM
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CY7C128A
CY7C128A
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STK25C48
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
Sn/15
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ttl SUBSTITUTION DATA BOOK
Abstract: STK25C48
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROM • 20ns, 25ns, 35ns and 45ns Access Times
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ttl SUBSTITUTION DATA BOOK
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Untitled
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
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STK25C48
Abstract: No abstract text available
Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times
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STK25C48
200ns
100-Year
24-Pin
STK25C48
ML0005
Sn/15
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Untitled
Abstract: No abstract text available
Text: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Functional Description Features • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C
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CG5982AF
CG5982AF
CG5982AF;
CY7C136
52-pin
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CG5982AF
Abstract: CY7C136
Text: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Features Functional Description • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C
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CG5982AF
CG5982AF
CG5982AF;
CY7C136
52-pin
CY7C136
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6116 ram
Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write
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L6116
L6116
L6116-L
L6116TM25*
L6116TM20*
L6116TM15*
MIL-STD-883
6116 ram
6116 ram 2k
memory 6116
6116 static RAM chip
L6116M
chip diagram of ram chip 6116
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CG5982AF
Abstract: CY7C136
Text: CG5982AF 2K x 8 Automotive Dual-port Static RAM CG5982AF 2K x 8 Automotive Dual-port Static RAM Features Functional Description • True dual-ported memory cells that allow simultaneous reads of the same memory location • Automotive temperature operation: –40°C to +115°C
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CG5982AF
CG5982AF
CG5982AF;
CY7C136
52-pin
CY7C136
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CY7C136-55NC
Abstract: cy7c136 CY7C136-55NI CY7C132 CY7C146 CY7C136-55JC 128959
Text: CY7C132/CY7C136 CY7C142/CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location The CY7C132/CY7C136/CY7C142 and CY7C146 are high-speed CMOS 2K by 8 dual-port static RAMs. Two ports
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CY7C132/CY7C136
CY7C142/CY7C146
CY7C132/CY7C136/CY7C142
CY7C146
CY7C132/
CY7C136
16-bit
27C136
CY7C136-55NC
CY7C136-55NI
CY7C132
CY7C136-55JC
128959
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b1366 equivalent
Abstract: b1369 B1366 B1363 b1367 B136-2 CY7B136 B136 T b136
Text: CY7B136 CY7B146 2K x 8 DualĆPort Static RAM output enable OE . BUSY flags are proĆ Features Functional Description D The CY7B136 and CY7B146 are highĆ speed BiCMOS 2K by 8 dualĆport static RAMS. Two ports are provided to permit independent access to any location in
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CY7B136
CY7B146
CY7B136
CY7B146
16bit
b1366 equivalent
b1369
B1366
B1363
b1367
B136-2
B136
T b136
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Untitled
Abstract: No abstract text available
Text: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use
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B8421/22-90
MB8421/22-90L
MB8421/22-12
MB8421/22-12L
MB8421/MB8422
MB8421
MB8422
FPT-64P-M
F64005S
MB8421/22-90
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Untitled
Abstract: No abstract text available
Text: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data
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L6116
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L6116PC85
Abstract: No abstract text available
Text: LOGIC DEVICES <ENC lbE D 2K x 8 Static RAM • ÌSbSTOS QGOdblb =i L6 116 T - -23-/2. Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, low- memory is deselected. In addition, power CMOS static RAM. The
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L6116
IDT6116,
CY7C128/CY6116
24-pin
24-pinPlastic
28-pin
L6116PC85
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L6116PC85
Abstract: L6116NC35 L6116PC35 cy6116 L6116PC45 IDT6116 L6116NC85 L6116PC20
Text: L6116 2K x 8 Static RAM Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data In and Data Out signals share I/O
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L6116
IDT6116,
CY7C128/CY6116
24-pin
L6116
I7/07
L6116PC85
L6116NC35
L6116PC35
cy6116
L6116PC45
IDT6116
L6116NC85
L6116PC20
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TZ1114
Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
Text: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design
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L6116/L6116L
L6116)
100nW
L6116L)
IDT6116,
CY7C128/CY6116
24-pln
24-pin
TZ1114
chip diagram of ram chip 6116
IDT6116
6116 static RAM chip
6116 ram 2k
cewe EZ
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EL6116
Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048
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L6116
L6116)
L6116-L)
L6116
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
24-pin
EL6116
6116 RAM
ci 6116
ram 6116
IDT6116
memory 6116
6116 memory
6116 ram 2k
chip diagram of ram chip 6116
L6116CMB25
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Untitled
Abstract: No abstract text available
Text: V V ITE LIC V61C32 FAMILY HIG H PERFORMANCE LOW POWER 2K x 8 BIT CMOS DUAL PORT MEMORY Features Description • 2K x 8 bit CMOS static RAM with 3-state outputs The Vitelic V61C 32 is a C M O S 2K x 8 high-speed dual port static RAM with a d va n ce d arbitration logic
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V61C32
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T7052
Abstract: No abstract text available
Text: HIGH-SPEED 2K x 8 FOUR-PORT STATIC RAM ADVANCE INFORMATION IDT 7052S IDT 7052L FEATURES: DESCRIPTION: • The ID T7052 is a high-speed 2K x 8 four-port static RAM de signed to be used in systems where multiple access to a common RAM is required. This four-port static RAM offers Increased system
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7052S
7052L
T7052
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organizational structure samsung
Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116
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LH5116
Am9128
CDM6116
HM6116A
HY6116
HM6116
MS6516
SRM2016
MK6116
CXK5816
organizational structure samsung
NMS256X8
MICRON Cross Reference
NMS256
256K RAM HM62256
MK6264
51256SL
TC5565 "cross reference"
MN44256
M5M5256
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access The IDT71V321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor com
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IDT71V321S/L
IDT71V321
25/35/55ns
IDT71V321S
T71V321L
52-pin
J52-1)
64-pin
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Untitled
Abstract: No abstract text available
Text: L 6 1 1 6 2K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation
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L6116)
L6116-L)
L6116
L6116-L
MIL-STD-883,
IDT6116,
CY7C128/CY6116
24-pin
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