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    2M 170 Search Results

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    2M 170 Price and Stock

    Taiwan Semiconductor 2M170ZH

    DIODE ZENER 170V 2W DO204AC
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    DigiKey 2M170ZH Reel 3,500
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    Avnet Americas 2M170ZH Reel 16 Weeks 3,500
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    Mouser Electronics 2M170ZH
    • 1 $0.45
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    Amphenol Communications Solutions MRDBN02M17000

    IP67 MRD CIRCULAR SHAPE CONNECTO
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    DigiKey MRDBN02M17000 Box 320
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    Focus Display Solutions Inc E43RG63248LW2M170-R

    GRAPHIC DISPLAY TFT RGB 4.3"
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    DigiKey E43RG63248LW2M170-R Ammo Pack 1
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    ams OSRAM Group GW-CSSRM2.EM-M7M9-XX35-K2M1-700-R18

    LED OSLON SQUARE SMD
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    DigiKey GW-CSSRM2.EM-M7M9-XX35-K2M1-700-R18 Reel
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    ams OSRAM Group GW-CSSRM1.UL-NENS-NC-K2M1-700-R18-XX

    LED OSLON SMD
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    DigiKey GW-CSSRM1.UL-NENS-NC-K2M1-700-R18-XX Reel
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    2M 170 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2M170Z A0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Zener - Single - DIODE ZENER 170V 2W DO204AC Original PDF
    2M170Z B0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Zener - Single - DIODE ZENER 170V 2W DO204AC Original PDF
    2M170ZHA0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Zener - Single - DIODE ZENER 170V 2W DO204AC Original PDF
    2M170ZHB0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Zener - Single - DIODE ZENER 170V 2W DO204AC Original PDF
    2M170ZHR0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Zener - Single - DIODE ZENER 170V 2W DO204AC Original PDF
    2M170Z R0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Zener - Single - DIODE ZENER 170V 2W DO204AC Original PDF

    2M 170 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-4E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-70/-90/-12 • DESCRIPTION The MBM29F017A is a 16M-bit, 5.0 V-Only Flash memory organized as 2M bytes of 8 bits each. The 2M bytes of data is divided into 32 sectors of 64K bytes for flexible erase capability. The 8 bit of data will appear on DQ7 to


    Original     		DS05-20843-4E MBM29F017A-70/-90/-12 MBM29F017A 16M-bit, 48-pin F0306 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2M EMI Backshell Ordering Information 2M380MS137, MS135, 2M380MB137, 2M380MA137 Contacts & Tools 2M Specs Service Class Straight Entry, Direct Coupling 2M380MS135 45° Entry 90° Entry 2M380MA137 Length 05 -6 Code Saddle Clamp Dia. Fully Closed 01 .109 02


    Original     		2M380MS137, MS135, 2M380MB137, 2M380MA137 2M380MS135 2M380MS PDF

    Untitled

    Abstract: No abstract text available
    Text: 2M Environmental EMI Backshell Ordering Info 2M390MS077, MS076, 2M380MB077, 2M380MA077 Contacts & Tools 2M Specs Part Number Service Class M PART NUMBER 2M390MS077 07 SIZE CODE 05 .2500-32 06 .3125-32 11 .3750-32 Straight Entry Rotatable Coupling 07 .4375-28


    Original     		2M390MS077, MS076, 2M380MB077, 2M380MA077 2M390MS077 2M392 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2M EMI Backshell Ordering Information 2M380MS137, MS135, 2M380MB137, 2M380MA137 Contacts & Tools 2M Specs Service Class Straight Entry, Direct Coupling 2M380MS135 45° Entry 90° Entry 2M380MA137 05 Code Saddle Clamp Dia. Fully Closed 01 .109 02 .172 09 .5625-24


    Original     		2M380MS137, MS135, 2M380MB137, 2M380MA137 2M380MS135 2M380MS PDF

    Untitled

    Abstract: No abstract text available
    Text: 2M Environmental EMI Backshell Ordering Info 2M390MS077, MS076, 2M390MB077, 2M390MA077 Contacts & Tools 2M Specs Service Class PART NUMBER 2M390MS077 2M390MA077 05 .2500-32 06 .3125-32 11 .3750-32 07 .4375-28 08 .5000-28 Straight Entry, Direct Coupling 09 .5625-24


    Original     		2M390MS077, MS076, 2M390MB077, 2M390MA077 2M390MS077 2M390MS PDF

    2n 333 equivalent

    Abstract: bf 333 transistor
    Text: 16 Megabit 2M x8-Bit Multi-Purpose Flash SST39VF016Q Advance Information FEATURES: • Organized as 2M x8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector-Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical)


    Original     		SST39VF016Q MO-142 40-LEAD 2n 333 equivalent bf 333 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original     		SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns PDF

    5MHz-37

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The


    Original     		DS05-20889-3E MBM29PDS322TE10/11 MBM29PDS322BE10/11 MBM29PDS322TE/BE 32M-bit, 63-ball F0206 5MHz-37 PDF

    TAPC640

    Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC b-cas 153 tss
    Text: White Electronic Designs WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged


    Original     		WED9LAPC2B16P8BC TAPC640 WED9LAPC2B16P8BC WED9LAPC2C16V4BC, WED9LAPC2C16P8BC WED9LAPC2C16P8BI WED9LAPC2C16V4BC b-cas 153 tss PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S281632A CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632A CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S281632A 128Mbit 16Bit A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-5E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The


    Original     		DS05-20889-5E MBM29PDS322TE10/11 MBM29PDS322BE10/11 MBM29PDS322TE/BE 32M-bit, 63-ball F0305 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O Document Title 4Bank x 2M x 32bits 4Bank x2M x16 *2 Stack Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2004 Preliminary Dec. 2004 Preliminary Mar. 2005 Preliminary


    Original     		256Mb 32bits 11Preliminary 256Mbit 8Mx16bit HY5V52E 456bit PDF

    Untitled

    Abstract: No abstract text available
    Text: 2M Strain Relief Clamp Ordering Information 2M620MS064 and 2M620MS065 Contacts & Tools 2M Specs Part Number Service Class 2M620MS06X Size Code -M 07 Direct Coupling Series 2M801, 2M803, 2M804 05 .2500-32 UNEF .11 5 06 .3125-32 UNEF .17 6 11 .3750-32 UNEF .17


    Original     		2M620MS064 2M620MS065 2M620MS06X 2M801 2M805930 HD38999 PDF

    K4S281632B-TC/L1L

    Abstract: K4S281632B K4S281632B-TC-L1H
    Text: K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632B CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S281632B 128Mbit 16Bit K4S281632B A10/AP K4S281632B-TC/L1L K4S281632B-TC-L1H PDF

    HY5V52EMP-6I

    Abstract: No abstract text available
    Text: 256Mb Synchronous DRAM based on 2M x 4Bank x32 I/O Document Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jul. 2004 Preliminary Nov. 2005 Final 1.0 1. Corrected Column Address CA7 -> CA8


    Original     		256Mb 32bits Page11 Page12) 256Mbit 8Mx16bit HY5V52E 456binks A10/AP HY5V52EMP-6I PDF

    K4S281632M

    Abstract: No abstract text available
    Text: K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S281632M CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S281632M 128Mbit 16Bit K4S281632M A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The


    Original     		DS05-20889-3E MBM29PDS322TE10/11 MBM29PDS322BE10/11 MBM29PDS322TE/BE 32M-bit, 63-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The


    Original     		DS05-20889-2E MBM29PDS322TE10/11 MBM29PDS322BE10/11 MBM29PDS322TE/BE 32M-bit, 63-ball F0112 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-4E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE10/11 MBM29PDS322BE10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The


    Original     		DS05-20889-4E MBM29PDS322TE10/11 MBM29PDS322BE10/11 MBM29PDS322TE/BE 32M-bit, 63-ball F0303 PDF

    Untitled

    Abstract: No abstract text available
    Text: STI642004G1-70SVGS 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI642004G1-70SVGS is a 2M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI642004G1-70SVGS consist of eight CMOS 2M


    OCR Scan     		STI642004G1-70SVGS 144-PIN STI642004G1-70SVGS 28-pin 400-mil PDF

    CDC2509

    Abstract: No abstract text available
    Text: Preliminary KMM378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2M x72 SDRAM DIMM with PLL & R egister based on 2M x8, 4K Ref. 3.3V S ynchronous DRAM s FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM378S203CT KMM378S203CT 400mil 24-pin 200-pin 200pin CDC2509 PDF

    Untitled

    Abstract: No abstract text available
    Text: STI322004B 72-PIN SIMMS 2M X 32 Bits DRAM SIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The Simple Technology STI322004B is a 2M x 32 bits Dynamic RAM high density memory module. The Simple Technology STI322004B consist of four CMOS 2M x 8 bits DPAMs in 28-pin


    OCR Scan     		STI322004B 72-PIN STI322004B 28-pin STI322004B-xxG STI322004B-xxT PDF

    CV395

    Abstract: stabiliser G180
    Text: Ref.: G180/2G Cold-Cathode Voltage G 180/2M Stabilisers Codes: G180/2G G180/2M CV395 The G180/2G is identical to the G180/2M but is fitted w ith a B8G/F base for w iring directly into the circuit. Both valves have tw o sym metrical anodes which may be used


    OCR Scan     		G180/2G G180/2G G180/2M CV395) G180/2M CV395 stabiliser G180 PDF

    PAL16R8A

    Abstract: No abstract text available
    Text: 0 ^ 1 7 2 5 G O T b lS T 4 • P A L16 L8 A M , P A LI 6L8A-2M, P A L16 R 4 A M , PAL16R4A-2M P A L1S R 6 A M , PAL16R6 A-2M , P A L16 R 8 A M , PAL16R8A-2M STAN DARD HIGH-SPEED PAL CIRCUITS D2705, FEBRUARY 1984-REVISED AUGUST 1989 J OR W PACKAG E C h o ic e of O peratin g S p e e d s


    OCR Scan     		PAL16R4A-2M PAL16R6 PAL16R8A-2M D2705, 1984-REVISED PAL16R8A PDF