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    2MBI400U4H Search Results

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    2MBI400U4H Price and Stock

    Fuji Electric Co Ltd 2MBI400U4H-120-50

    Igbt, 2 Pack Module 1200V, 400A, M234; Continuous Collector Current:400A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:2.045Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel |Fuji Electric 2MBI400U4H-120-50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2MBI400U4H-120-50 Bulk 1
    • 1 -
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    Fuji Electric Co Ltd 2MBI400U4H-120

    INSULATED GATE BIPOLAR TRANSISTOR, 600A I(C), 1200V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2MBI400U4H-120 241
    • 1 $130
    • 10 $130
    • 100 $105
    • 1000 $100
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    Fuji Electric Semiconductors 2MBI400U4H-120

    IGBT MOD.DIODE DUAL 400A 1200V U SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik 2MBI400U4H-120
    • 1 $247.83707
    • 10 $236.0353
    • 100 $236.0353
    • 1000 $236.0353
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    Fuji Electric Semiconductors 2MBI400U4H-170-07

    IGBT MODULE 400A 1700V DUAL FUJI
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    Ozdisan Elektronik 2MBI400U4H-170-07
    • 1 $232.44144
    • 10 $221.3728
    • 100 $221.3728
    • 1000 $221.3728
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    Fuji Electric Semiconductors 2MBI400U4H-170-50

    IGBT MOD.DIODE DUAL 400A 1700V U SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik 2MBI400U4H-170-50
    • 1 $276.1562
    • 10 $263.0059
    • 100 $263.0059
    • 1000 $263.0059
    • 10000 $263.0059
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    2MBI400U4H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2mbi400u4h-170

    Abstract: 2MBI400U4H ED-4701 MT5F12959 2MBI400U4H170
    Text: SPECIFICATION Device Name : Type Name : Spec. No. Apr. 15 ’05 S.Miyashita Apr. 15 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI400U4H-170 MS5F 6098 MS5F6098 1 a 13 H04-004-07b R e v i s e d Date Classification Apr.-15 -’05 Enactment Oct.-25-’05


    Original     		2MBI400U4H-170 MS5F6098 H04-004-07b P4/13) H04-004-06b H04-004-03a 2mbi400u4h-170 2MBI400U4H ED-4701 MT5F12959 2MBI400U4H170 PDF

    2MBI400U4H-120

    Abstract: 2mbi400u4h ED-4701 MT5F12959
    Text: SPECIFICATION Device Name : Type Name : Spec. No. Feb. 09 ’05 S.Miyashita Feb. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI400U4H-120 MS5F 6038 MS5F6038 1 13 H04-004-07b R e v i s e d Date Classification Feb.-09 -’05 Enactment Ind. Content R e c o r d s


    Original     		2MBI400U4H-120 MS5F6038 H04-004-07b H04-004-06b H04-004-03a 2MBI400U4H-120 2mbi400u4h ED-4701 MT5F12959 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 PDF