FM28V202

Abstract: FM28V202TG TSOP-II 44 Recommended PCB Footprint
Contextual Info: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process

FM21L16

Abstract: FM18L08 FM20L08 FM21L16-60-TG
Contextual Info: Preliminary FM21L16 2Mbit FRAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

FM21L16

Abstract: FM18L08 FM20L08 FM21L16-60-TG
Contextual Info: Preliminary FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

MSL3 RoHS FBGA

Abstract: fm23mld16 FM21LD16-60-BG FM22LD16
Contextual Info: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM21L16

Abstract: FM21L16-60-TG FM18L08 FM20L08 TSOP-II 44 Recommended PCB Footprint
Contextual Info: Preliminary FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: WHITE /MICROELECTRONICS WPSF128K16G-27PJX 2Mbit of SRAM & 2Mbit of FLASH 128Kx16 SRAM/128Kx16 FLASH MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • A cce ss Tim es o f 20ns SRAM ■ ■ A cce ss Tim es o f 70ns (Flash) 100,000 Erase/Program Cycles ■

SD4148

Contextual Info: WPSF128K16G-27PJX WHITE /MICROELECTRONICS a 2Mbit of SRAM & 2Mbit of FLASH 128Kx16 SRAM/128Kx16 FLASH MODULE AD VAN CED * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 20ns SRAM ■ ■ A cce ss Tim es of 70ns (Flash) • 68 Lead, Plastic PLCC, 24.71 mm (0.973 inch) square

FM21L16-60-TG

Abstract: FM21L16-60-TGTR FM18L08 FM20L08 FM21L16 JESD22-A114-F
Contextual Info: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

MSL3 RoHS FBGA

Abstract: fm23mld16 failure rate
Contextual Info: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

FM21L16

Contextual Info: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process

ADDS-2189M-EZLITE

Abstract: ADDS-218X-ICE-2.5V ADSP-21535 ADSP-2185N MIP 320 VDSP-21XX-PC-FULL ADSP-2188N ADSP-2187N ADSP-2188M ADSP-2189M
Contextual Info: 16-Bit DSP Key Products Recommended for New Designs Code-Compatible 219X Series 150 Code-Compatible and Pin Compatible 218X N Series 75 218X M Series 50 218X L Series 80 MIPS Up to 2MBit SRAM 0.3 mA/MIP @1.8V 75 MIPS Up to 2MBit SRAM 0.5 mA/MIP @2.5V 33-52 MIPS

Contextual Info: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

HY62QF16200A

Contextual Info: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

HY62SF16201A

Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
Contextual Info: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The

Contextual Info: HY62SF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62SF16200A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62QF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62UF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16200A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62UF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16201A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62QF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16200A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: PRELIMINARY CYM1830 PVPDI7QC SEMICONDUCTOR 64K x 32 Static RAM Module Features Functional Description • High-density 2 M egabit SRAM Module T he CYM1830 is a high perform ance 2Mbit Static RA M module organized as 64K words by 32 bits. This module is con­

Contextual Info: HY62QF16201A Series 128K X 16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and