2MIN Search Results

2MIN Price and Stock

Filter by Manufacturer


Espressif Inc ESP32-MINI-1U-N4 RF TXRX MOD BLUETOOTH U.FL SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESP32-MINI-1U-N4	Digi-Reel	4,149		1	1 $2.3 10 $2.3 100 $2.3 1000 $2.3 10000 $2.3	Buy Now
	ESP32-MINI-1U-N4	Cut Tape	4,149		1	1 $2.3 10 $2.3 100 $2.3 1000 $2.3 10000 $2.3	Buy Now
	ESP32-MINI-1U-N4	Reel	3,250		650	1 - 10 - 100 - 1000 $2.3 10000 $2.3	Buy Now
Mouser Electronics	ESP32-MINI-1U-N4		5,147			1 $2.3 10 $2.3 100 $2.3 1000 $2.3 10000 $2.3	Buy Now
Espressif Inc ESP32-S2-MINI-1U-N4 RF TXRX MODULE WIFI U.FL SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESP32-S2-MINI-1U-N4	Cut Tape	3,742		1	1 $2 10 $2 100 $2 1000 $2 10000 $2	Buy Now
	ESP32-S2-MINI-1U-N4	Digi-Reel	3,742		1	1 $2 10 $2 100 $2 1000 $2 10000 $2	Buy Now
	ESP32-S2-MINI-1U-N4	Reel	1,950		650	1 - 10 - 100 - 1000 $2.00002 10000 $2.00002	Buy Now
Mouser Electronics	ESP32-S2-MINI-1U-N4		6,113			1 $2 10 $2 100 $2 1000 $2 10000 $2	Buy Now
TME	ESP32-S2-MINI-1U-N4		592		1	1 $3.48 10 $3.13 100 $2.46 1000 $2.46 10000 $2.46	Buy Now
EBV Elektronik	ESP32-S2-MINI-1U-N4		44,850	16 Weeks	650	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Espressif Inc ESP32-MINI-1-H4 RF TXRX MOD BT WIFI THCHAS MNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESP32-MINI-1-H4		3,663		1	1 $2.38 10 $2.38 100 $2.38 1000 $2.38 10000 $2.38	Buy Now
Mouser Electronics	ESP32-MINI-1-H4		2,676			1 $2.38 10 $2.38 100 $2.38 1000 $2.38 10000 $2.38	Buy Now
EBV Elektronik	ESP32-MINI-1-H4			26 Weeks	650	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Espressif Inc ESP32-H2-MINI-1-N4 RF TXRX MOD BT WIFI PCB TH SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESP32-H2-MINI-1-N4	Reel	3,250		650	1 - 10 - 100 - 1000 $2.06002 10000 $2.06002	Buy Now
Mouser Electronics	ESP32-H2-MINI-1-N4		5,151			1 $2.06 10 $2.06 100 $2.06 1000 $2.06 10000 $2.06	Buy Now
EBV Elektronik	ESP32-H2-MINI-1-N4			26 Weeks	650	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Espressif Inc ESP32-S2-MINI-2-N4R2 RF TXRX MOD WIFI PCB TRACE SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESP32-S2-MINI-2-N4R2	Reel	3,250		650	1 - 10 - 100 - 1000 $2.45002 10000 $2.45002	Buy Now
Mouser Electronics	ESP32-S2-MINI-2-N4R2		4,342			1 $2.45 10 $2.45 100 $2.45 1000 $2.45 10000 $2.45	Buy Now
TME	ESP32-S2-MINI-2-N4R2		542		1	1 $3.96 10 $3.63 100 $3.01 1000 $3.01 10000 $3.01	Buy Now
EBV Elektronik	ESP32-S2-MINI-2-N4R2		650	26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Maritex	ESP32-S2-MINI-2-N4R2		2,600			1 $2.817 10 $2.817 100 $2.394 1000 $2.225 10000 $2.225	Buy Now

New Advantage Corporation	ESP32-S2-MINI-2-N4R2		520		1	1 - 10 - 100 $10.51 1000 $9.73 10000 $9.73	Buy Now

Find more 2MIN price and stock on Findchips.com

2MIN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
5687 general electric Abstract: mitsubishi 1183 MGF0912A Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power	Original	MGF0912A MGF0912A 33dBm June/2004 5687 general electric mitsubishi 1183	PDF
MGFC42V5964A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC42V5964A MGFC42V5964A Item-51]	PDF
MGFS45V2735 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFS45V2735 MGFS45V2735 -45dBc 25deg	PDF
4SP820M T Abstract: 10SP470M 4SP1000M sanyo OS-CON 25SP56M 6SP220M SANYO 6SP390M 4SP560M T 10SP56M 16SP33M 20SP22M Text: TM 2. SPECIFICATIONS FOR EACH SERIES Large Capacitance and Low ESR Optimum for Computer Audio etc. SP Items Category temperature range Tolerance on rated capacitance 120Hz Tangent of loss angle(tanδ) (120Hz) Leakage current (µA/2min)(or less) ※2 ESR (100k to 300kHz)	Original	120Hz) 300kHz) 100kHz, 25WV20V 2SP1000M 2R5SP1200M 4SP1000M 6SP680M 4SP820M 4SP820M T 10SP470M 4SP1000M sanyo OS-CON 25SP56M 6SP220M SANYO 6SP390M 4SP560M T 10SP56M 16SP33M 20SP22M	PDF
MGFC42V5258 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC42V5258 MGFC42V5258 June/2004	PDF
MGFC40V3742 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004	PDF
MGFC41V5964 Abstract: fet 30 f 124 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4	Original	MGFC41V5964 MGFC41V5964 50ohm Item-51] 30dBm fet 30 f 124	PDF
MGFC40V3742 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC40V3742 MGFC40V3742 29dBm 10MHz	PDF
signal strength meter Abstract: RF Transmitter 315MHz rf 315mhz LED display for radio meter led bargraph meter 315MHz RF Text: RF HAND HELD RF METER • • • • • • • • • Hand Held Signal Strength Meter Detects Carrier RF Activity 10 digit LED Display with Peak Hold Displays -108dBm to –40dBm Signal Strength Operates from Single PP3 Battery Battery Low Indication Auto Shutoff after 2min	Original	-108dBm 40dBm 84MHz 50MHz DS066-4 signal strength meter RF Transmitter 315MHz rf 315mhz LED display for radio meter led bargraph meter 315MHz RF	PDF
Untitled Abstract: No abstract text available Text: Miniature Aluminum Electrolytic Capacitors UZ 5mm in length, temperature of wide range solvent proof Series UZ series measures 5mm in length and have stable characteristics at the temperature of wide range (−55 to +105°C) They are miniature, long life and solvent proof (within 2minutes).	Original	120Hz) C/Z20 1000hrs. 100kHz, 16MV10UZ	PDF
MGFC50G Abstract: No abstract text available Text: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2	Original	MGFC50G5867 MGFC50G5867, CSTG-14855 MGFC50G	PDF
15000UF Abstract: No abstract text available Text: Large Aluminum Electrolytic Capacitors PL-FA Snap-in Type 105°C Standard Series • Specifications Items Rated voltage Operating temperature range Capacitance tolerance V (°C) (%) Tangent of loss angle (tan δ)(120Hz)(MAX.) Leakage current (L.C.)(µA/after 2min.)(MAX.)	Original	120Hz) C/Z20 3000hrs. 120Hz, 15000UF	PDF
5.8 ghz amplifier 10w Abstract: Gaas Power Amplifier 10W Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC40V5258 MGFC40V5258 25deg June/2004 5.8 ghz amplifier 10w Gaas Power Amplifier 10W	PDF
5.8 ghz amplifier 10w Abstract: MGFC40V5258 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC40V5258 MGFC40V5258 June/2004 5.8 ghz amplifier 10w	PDF

MGFC42V3742 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC42V3742 MGFC42V3742 31dBm 10MHz June/2004	PDF
MGFC42V3742 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET . DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	MGFC42V3742 MGFC42V3742 31dBm 10MHz	PDF
MGFC42V5258 Abstract: GF-18 5.8GHz Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC42V5258 MGFC42V5258 25deg GF-18 5.8GHz	PDF
5.8GHz Abstract: 5.8 ghz amplifier 10w MGFC40V5258 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC40V5258 MGFC40V5258 25deg 5.8GHz 5.8 ghz amplifier 10w	PDF
MGFC47V5864 Abstract: 5.8 ghz transmitter Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.4GHz	Original	MGFC47V5864 MGFC47V5864 47dBm June/2004 5.8 ghz transmitter	PDF
Untitled Abstract: No abstract text available Text: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN	Original	MGF0912A MGF0912A, 33dBm	PDF
6SL22M Abstract: 10SL100M 10SL10M 6SL47M 6SL10M 6SL15M SANYO 3.3uf ESR 10SL47M 10SL4R7M 25SL6R8M Text: Specifications Items 1 Operating temperature range 2 Capacitance tolerance 120Hz 3 Tangent of loss angle(120Hz) Leakage current(uA/after 2min.) 4 (or less) 2 5 ESR(100k 300kHz) Temperature characteristics 6 Impedance ratio at 100kHz High-temperature load	Original	120Hz) 300kHz) 100kHz 105degrees 2000Hrs. 1000Hrs. 55degrees -55degrees 6SL22M 10SL100M 10SL10M 6SL47M 6SL10M 6SL15M SANYO 3.3uf ESR 10SL47M 10SL4R7M 25SL6R8M	PDF
10SH220M Abstract: 20SH100M 25SH1R5M 20SH47M 16SH10M 25SH15M 16WV 16SH1M 25SH3R3M 16SH2R2M Text: Specifications Items 1 Operating temperature 2 Capacitance tolerance 120Hz 3 Tangent of loss angle(120Hz) 4 Leakage current(uA/2min.)(or less) 5 ESR(100k 300kHz) Temperature characteristics 6 Impedance ratio at 100kHz 2 High-temperature load 105degrees C,	Original	120Hz) 300kHz) 100kHz 105degrees 5000Hrs. 1000Hrs. 60degrees 55degrees 10SH220M 20SH100M 25SH1R5M 20SH47M 16SH10M 25SH15M 16WV 16SH1M 25SH3R3M 16SH2R2M	PDF
SC371-10A Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking	Original	SC371-10A SC371-10A TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A	PDF
Untitled Abstract: No abstract text available Text: PACKAGE OUTLINE DRAWINGS S C Series o 2.0 1 CM 6 <£> cvi Lflj L 2MIN 1.3 5 ±0.4 - , + 0 .4 5.1 -o.i 4.35±0.4 1.20.2 +4 - 0 K-Pack Series 6 . 5 ± 0.2 5 ± 0.2 nc 0 . 6 02 -o.i q f\j _ bo m M n 0.2 . 9 -o.i 4 Collmer Semiconductor, Inc. • (214 2331589	OCR Scan		PDF

Privacy Settings

2MIN Search Results

2MIN Price and Stock

Espressif Inc ESP32-MINI-1U-N4

Espressif Inc ESP32-S2-MINI-1U-N4

Espressif Inc ESP32-MINI-1-H4

Espressif Inc ESP32-H2-MINI-1-N4

Espressif Inc ESP32-S2-MINI-2-N4R2

2MIN Datasheets Context Search

5687 general electric

MGFC42V5964A

MGFS45V2735

4SP820M T

MGFC42V5258

MGFC40V3742

MGFC41V5964

MGFC40V3742

signal strength meter

Untitled

MGFC50G

15000UF

5.8 ghz amplifier 10w

5.8 ghz amplifier 10w

MGFC42V3742

MGFC42V3742

MGFC42V5258

5.8GHz

MGFC47V5864

Untitled

6SL22M

10SH220M

SC371-10A

Untitled