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    STMicroelectronics STL130N8F7

    MOSFET N-CH 80V 130A POWERFLAT
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    DigiKey STL130N8F7 Cut Tape 10,489 1
    • 1 $3.43
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    • 100 $1.5905
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    STL130N8F7 Digi-Reel 10,489 1
    • 1 $3.43
    • 10 $2.281
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    Avnet Americas STL130N8F7 Reel 26 Weeks 3,000
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    Mouser Electronics STL130N8F7 1,697
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    Newark STL130N8F7 Cut Tape 1
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    STMicroelectronics STL130N8F7 7,697 1
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    TME STL130N8F7 1
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    ComSIT USA STL130N8F7 1,085
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    Avnet Silica STL130N8F7 3,000 17 Weeks 3,000
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    Chip Stock STL130N8F7 210
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    EBV Elektronik STL130N8F7 27 Weeks 3,000
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    Vyrian STL130N8F7 5,599
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    On-Shore Technology Inc EDSTL130-04

    TERM BLOCK HDR 4POS VERT 5MM
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    DigiKey EDSTL130-04 Bulk 5,758 1
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    On-Shore Technology Inc EDSTL130-5

    TERM BLOCK HDR 5POS VERT 5MM
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    DigiKey EDSTL130-5 Bulk 3,788 1
    • 1 $1.14
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    • 100 $0.822
    • 1000 $0.69866
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    On-Shore Technology Inc EDSTL130-02

    TERM BLOCK HDR 2POS VERT 5MM
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    DigiKey EDSTL130-02 Bulk 3,720 1
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    On-Shore Technology Inc EDSTL130-06

    TERM BLOCK HDR 6POS VERT 5MM
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    DigiKey EDSTL130-06 Bulk 2,384 1
    • 1 $1.3
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    • 100 $0.9371
    • 1000 $0.79648
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    Find more TL130 price and stock on Findchips.com

    TL130 Datasheets (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    TL1300H Lite-On Technology Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective device Original PDF
    TL1300L Lite-On Technology Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective device Original PDF
    TL1300M Lite-On Technology Rated repetitive off-state voltage:120 ,surface mount thyristor surge protective device Original PDF
    TL1305800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 13POS TOP ENTRY 5MM PCB Original PDF
    TL 130A B&K Precision Test Leads - Kits, Assortments, Test and Measurement, GENERAL PURPOSE DMM KIT Original PDF

    TL130 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    xm0830

    Abstract: C54PF GaAs IC High Isolation Positive Control Switch 3.5GHZ
    Text: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01C GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz


    Original     		XM0830SK-TL1301 DS0830SK-01C 35dBm 12pin xm0830 C54PF GaAs IC High Isolation Positive Control Switch 3.5GHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET XM0825SF-TL1301 Ver. 9.00 GaAs IC High Power SP3T Switch for 0.8-2.5GHz  Applications AMPS, CDMA, GPS and other RF applications.  Features • Positive Voltage Control.+2.8V typ. • Low Insertion Loss.0.35dB @ 900MHz / 0.38dB @ 1900MHz


    Original     		XM0825SF-TL1301 900MHz 1900MHz PDF

    XM0830SK-TL1301

    Abstract: MURATA GRM155
    Text: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01B GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz


    Original     		XM0830SK-TL1301 DS0830SK-01B 35dBm 12pin XM0830SK-TL1301 MURATA GRM155 PDF

    MURATA GRM155

    Abstract: murata packing information
    Text: PRELIMINARY DATA SHEET XM0825SF-TL1301 Ver. 9.00 GaAs IC High Power SP3T Switch for 0.8-2.5GHz  Applications AMPS, CDMA, GPS and other RF applications.  Features • Positive Voltage Control .+2.8V typ. • Low Insertion Loss .0.35dB @ 900MHz / 0.38dB @ 1900MHz


    Original     		XM0825SF-TL1301 900MHz 1900MHz -108dBm MURATA GRM155 murata packing information PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND PDF

    100uV

    Abstract: digit2000 TIP 29B
    Text: 2870 2860A Specifications models 2860A 2870 The “Survivor” name says it all! • Heavy Duty 1500 VDC rating ■ Ruggedized construction ■ Includes rubber boot ■ Withstands 5-foot drop ■ Extra large, high contrast LCD display ■ Gasket sealed against dirt and contaminants


    Original     		12/sec. TL-130A PR-28A LC-29B 100uV digit2000 TIP 29B PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PTFA091503EL PTFA091503EL 150-watt, H-33288-6 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235 PDF

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    C205

    Abstract: No abstract text available
    Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original     		PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    TL1300H

    Abstract: GR-1089-CORE TL0640H TL0720H TL0900H TL1100H TL3500H TL1500H
    Text: LITE-ON SEMICONDUCTOR TL0640H thru TL3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP DO-201AD FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400


    Original     		TL0640H TL3500H DO-201AD 10/1000us 8/20us 03-Dec-2001, KDWE01 TL1300H GR-1089-CORE TL0720H TL0900H TL1100H TL3500H TL1500H PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 PDF

    PTFB192503EL V1

    Abstract: No abstract text available
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


    Original     		PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1 PDF

    TL107 linear

    Abstract: TRANSISTOR tl131
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original     		PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131 PDF

    PTFB212503FL

    Abstract: No abstract text available
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt H-33288-6 H-34288-4/2 PDF

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131 PDF