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    TL131 Price and Stock

    Honeywell Sensing and Control

    Honeywell Sensing and Control 1TL1-31

    SWITCH TOGGLE SPDT 15A 125V
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    Honeywell Sensing and Control 4TL1-31

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    Honeywell Sensing and Control 2TL1-31

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    Honeywell Sensing and Control 2TL1-31K

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    Honeywell Sensing and Control 2TL1-31F

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    TL131 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    DE104iML

    Abstract: prepreg 7628 AT05 7628M PCB f antenna balun 2.4ghz cc2500 tl131 CC24xx CC2500 GRM1555C1HR50BZ01 prepreg 7628 LWQ15AN1N5B00
    Text: CC2590 www.ti.com . SWRS080 – SEPTEMBER 2008 2.4-GHz RF Front End, 14-dBm output power


    Original     		CC2590 SWRS080 14-dBm 14-dBm CC24xx CC2500, CC2510, CC2511 DE104iML prepreg 7628 AT05 7628M PCB f antenna balun 2.4ghz cc2500 tl131 CC24xx CC2500 GRM1555C1HR50BZ01 prepreg 7628 LWQ15AN1N5B00 PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND PDF

    prepreg 7628 AT05

    Abstract: prepreg 7628 CC2500
    Text: CC2590 www.ti.com . SWRS080 – SEPTEMBER 2008 2.4-GHz RF Front End, 14-dBm output power


    Original     		CC2590 SWRS080 14-dBm 14-dBm CC24xx CC2500, CC2510, CC2511 prepreg 7628 AT05 prepreg 7628 CC2500 PDF

    TL131

    Abstract: SWRS070A CC2500 CC2510 balun matching circuit C161 CC2510 CC2511 CC2591 CC2591EM QFN-16
    Text: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


    Original     		CC2591 SWRS070A 22-dBm CC24xx CC2500, CC2510, CC2511 100-nA TL131 SWRS070A CC2500 CC2510 balun matching circuit C161 CC2510 CC2511 CC2591 CC2591EM QFN-16 PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    CC2500

    Abstract: No abstract text available
    Text: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


    Original     		CC2591 SWRS070A 22-dBm CC24xx CC2500, CC2510, CC2511 100-nA 100-mA 20-dBm CC2500 PDF

    DN007

    Abstract: AN032 CC2430 CC2591EM RFID on CC2430 TL131 CC2431 CC2480 CC2591 CFR47
    Text: Application Note AN063 Using CC2591 Front End with CC2430 By Charlotte Seem and Torjus Kallerud Keywords • • • • • 1 • • • • 2.4 GHz IEEE 802.15.4 systems ZigBee systems Range Extender External PA External LNA CC2430 CC2431 CC2480 CC2591


    Original     		AN063 CC2591 CC2430 CC2431 CC2480 CC2591 CC2430 DN007 AN032 CC2591EM RFID on CC2430 TL131 CC2431 CC2480 CFR47 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PTFA091503EL PTFA091503EL 150-watt, H-33288-6 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235 PDF

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA PDF

    TL131

    Abstract: RF MODULE CC2500 CIRCUIT DIAGRAM GRM1555C1H1R0BZ01 CC2510 balun matching circuit transistor c111 interfacing zigbee cc2500 with microcontroller cc2500 microcontroller interfacing C101 Transistor CC2500 RF pcb antenna CC2591
    Text: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


    Original     		CC2591 SWRS070A 22-dBm CC24xx CC2500, CC2510, CC2511 100-nA TL131 RF MODULE CC2500 CIRCUIT DIAGRAM GRM1555C1H1R0BZ01 CC2510 balun matching circuit transistor c111 interfacing zigbee cc2500 with microcontroller cc2500 microcontroller interfacing C101 Transistor CC2500 RF pcb antenna CC2591 PDF

    CC2510 balun matching circuit

    Abstract: CC2591EM CC2500
    Text: CC2591 www.ti.com . SWRS070A – MARCH 2008 – REVISED JUNE 2008 2.4-GHz RF Front End FEATURES APPLICATIONS


    Original     		CC2591 SWRS070A 22-dBm CC24xx CC2500, CC2510, CC2511 100-nA 100-mA 20-dBm CC2510 balun matching circuit CC2591EM CC2500 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 PDF

    PTFB192503EL V1

    Abstract: No abstract text available
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


    Original     		PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1 PDF

    TL107 linear

    Abstract: TRANSISTOR tl131
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original     		PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131 PDF

    PTFB212503FL

    Abstract: No abstract text available
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt H-33288-6 H-34288-4/2 PDF

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131 PDF