LM393 switching power supply
Abstract: LM393 lm393 equivalent TLV1393 TLV1393ID TLV1393IP TLV1393Y TLV2393 TLV2393ID TLV2393Y
Text: TLV1393, TLV1393Y, TLV2393, TLV2393Y DUAL DIFFERENTIAL COMPARATORS SLCS121 - A U G U ST 1993 Low-Voltage and Single-Supply Operation Vcc = 2 V to 7 V Common-Mode Voltage Range That Includes Ground Fast Response Time 450 ns Typ TLV2393 Low Supply Current
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OCR Scan
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TLV1393,
TLV1393Y,
TLV2393,
TLV2393Y
SLCS121
TLV2393)
TLV1393)
TLV1393
TLV2393
LM393 switching power supply
LM393
lm393 equivalent
TLV1393ID
TLV1393IP
TLV1393Y
TLV2393ID
TLV2393Y
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TL205
Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
TL205
TL2322
RO4350
tl233
tl241
587-1818-2-ND
c201
017 C202
tl147
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tl249
Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB182503EL
PTFB182503FL
PTFB182503EL
PTFB182503FL
240-watt
H-33288-6,
H-34288-6,
tl249
tl2472
TL244
TRANSISTOR tl131
TL251
tl239
PTFB182503
tl250
TL242
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LM7805ACH-ND
Abstract: TL174 tl173 PTVA035002EV V1
Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features
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PTVA035002EV
PTVA035002EV
H-36275-4
a035002
50stances.
LM7805ACH-ND
TL174
tl173
PTVA035002EV V1
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C109 ceramic capacitor
Abstract: TL235
Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208FV
PTFB213208SV
320-watt
H-34275G-6/2
C109 ceramic capacitor
TL235
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PDF
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TRANSISTOR tl131
Abstract: tl239
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
TRANSISTOR tl131
tl239
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TL272
Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
TL272
TL184
TL181
tl271
TL308
Tl187 transistor
tl274
TL293
TL193
TL148
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PDF
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TL145
Abstract: TL245 transistor c111 C216 TL152
Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608FV
PTFB093608FV
H-37275-6/2
TL145
TL245
transistor c111
C216
TL152
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PDF
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TRANSISTOR tl131
Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB182503EL
PTFB182503FL
PTFB182503EL
PTFB182503FL
240-watt
TRANSISTOR tl131
ptfb192503
tl134
TL105B
TL231
PTFB192503EL V1
c103 TRANSISTOR
RO4350
TL117
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TL139
Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
H-37275-6/2
TL139
PTFB183404
PTFB183404EF
TL148
TRANSISTOR tl131
TL162
TL170
tl172
c105 TRANSISTOR
TL145
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Untitled
Abstract: No abstract text available
Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input
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Original
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PTFB182503EL
PTFB182503FL
PTFB182503EL
PTFB182503FL
240-watt
H-33288-6
H-34288-4/2
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
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ATC100B6R2CT500X
Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208FV
PTFB213208SV
320-watt
PTFB213208FV
H-34275G-6/2
ATC100B6R2CT500X
TL230
TL235
TL156
TL247
C20210
ATC100B100FW500X
TL140
TL251
TL126
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PDF
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transistor c124
Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use
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Original
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PTMA080304M
PTMA080304M
20-lead
PG-DSO-20-63
transistor c124
TL184
TL272
tl271
TL181
TL279
tl298
TL168
TL308
TL300
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Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's
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Original
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's
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Original
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
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PDF
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TL139
Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB183404E
PTFB183404F
PTFB183404F
340-watt
H-36275-8
H-37275-6/2
TL139
TL205
PTFB183404
transistor TL131
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PDF
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PTFB093608
Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960
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PTFB093608FV
PTFB093608FV
H-37275-6/2
PTFB093608
tl2272
ptfb09360
TL258
TL103 application note
tl131
TRANSISTOR c104
TL249
TL145
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PDF
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TL272
Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty
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PTFB201402FC
PTFB201402FC
H-37248-4
17ubstances.
TL272
tl271
TL274
5228 voltage regulator
TL279
TL246
c221 TRANSISTOR
TL-250
tl2741
HD 1077 O
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TL2012
Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier
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PTFB211503EL
PTFB211503FL
PTFB211503EL
PTFB211503FL
150-watt,
TL2012
TRANSISTOR tl131
C801
C802
C803
R250
8C802
tl1252
TL1-16
ATC 221
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB183408SV
PTFB183408SV
340-watt
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TL235
Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
Text: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz
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PTFB091507FH
PTFB091507FH
H-34288-4/2
16ubstances.
TL235
LM78L05ACM-ND
LM78L05ACMND
PTFB091507
TL230
ATC100B330JW500XB
TL1081
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PDF
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TL244
Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features
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Original
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PTVA035002EV
PTVA035002EV
H-36275-4
TL244
CW 7805
LM7805ACH-ND
tl173
TL235
TL138
TL251
TL148
TL170
tl134
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PDF
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TL250
Abstract: TL239
Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,
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Original
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PTFB093608FV
PTFB093608FV
H-34275G-6/2
TL250
TL239
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PDF
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