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    TL140 Price and Stock

    STMicroelectronics STL140N6F7

    MOSFET N-CH 60V 145A POWERFLAT
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    DigiKey STL140N6F7 Cut Tape 6,144 1
    • 1 $3.18
    • 10 $2.067
    • 100 $3.18
    • 1000 $1.07543
    • 10000 $1.07543
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    STL140N6F7 Digi-Reel 6,144 1
    • 1 $3.18
    • 10 $2.067
    • 100 $3.18
    • 1000 $1.07543
    • 10000 $1.07543
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    STL140N6F7 Reel 6,000 3,000
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    Avnet Americas STL140N6F7 Reel 26 Weeks 3,000
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    • 10000 $0.96744
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    STL140N6F7 Reel 26 Weeks 3,000
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    • 10000 $0.97576
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    Mouser Electronics STL140N6F7 1,691
    • 1 $2.9
    • 10 $2.02
    • 100 $1.43
    • 1000 $1.06
    • 10000 $0.991
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    Newark STL140N6F7 Cut Tape 2,962 1
    • 1 $2.62
    • 10 $1.8
    • 100 $1.29
    • 1000 $0.998
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    STMicroelectronics STL140N6F7 1,691 1
    • 1 $2.84
    • 10 $1.98
    • 100 $1.4
    • 1000 $1.14
    • 10000 $1.14
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    Avnet Silica STL140N6F7 27,000 17 Weeks 3,000
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    Chip One Stop STL140N6F7 Cut Tape 2,740
    • 1 $2.16
    • 10 $1.8
    • 100 $1.31
    • 1000 $0.946
    • 10000 $0.924
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    EBV Elektronik STL140N6F7 27 Weeks 3,000
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    New Advantage Corporation STL140N6F7 20,996 1
    • 1 $3.2
    • 10 $3.2
    • 100 $3.2
    • 1000 $3.16
    • 10000 $2.88
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    STMicroelectronics STL140N4F7AG

    MOSFET N-CH 40V 120A POWERFLAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STL140N4F7AG Cut Tape 3,123 1
    • 1 $2.22
    • 10 $1.42
    • 100 $2.22
    • 1000 $0.70688
    • 10000 $0.70688
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    STL140N4F7AG Digi-Reel 3,123 1
    • 1 $2.22
    • 10 $1.42
    • 100 $2.22
    • 1000 $0.70688
    • 10000 $0.70688
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    STL140N4F7AG Reel 3,000 3,000
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    • 10000 $0.605
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    Avnet Americas STL140N4F7AG Bulk 26 Weeks 3,000
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    • 10000 $0.59532
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    Mouser Electronics STL140N4F7AG 1,312
    • 1 $2.1
    • 10 $1.39
    • 100 $0.948
    • 1000 $0.699
    • 10000 $0.605
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    Newark STL140N4F7AG Cut Tape 1
    • 1 $1.92
    • 10 $1.34
    • 100 $0.982
    • 1000 $0.772
    • 10000 $0.772
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    STMicroelectronics STL140N4F7AG 1,312 1
    • 1 $2.06
    • 10 $1.36
    • 100 $0.93
    • 1000 $0.74
    • 10000 $0.74
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    Avnet Silica STL140N4F7AG 3,000 17 Weeks 3,000
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    EBV Elektronik STL140N4F7AG 27 Weeks 3,000
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    Pennsville Components PBTL1-4-0.3

    Molex PicoBlade to Tinned Leads
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PBTL1-4-0.3 Bag 10
    • 1 -
    • 10 $7.5
    • 100 $5.5
    • 1000 $7.5
    • 10000 $2.2
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    On-Shore Technology Inc EDSTL140-24

    TERM BLOCK HDR 24POS 90DEG 5MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EDSTL140-24 Bulk 50
    • 1 -
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    • 100 $4.489
    • 1000 $4.489
    • 10000 $4.489
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    STMicroelectronics STL140N4LLF5

    MOSFET N-CH 40V 140A POWERFLAT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STL140N4LLF5 Cut Tape 1
    • 1 $3.93
    • 10 $2.581
    • 100 $3.93
    • 1000 $1.37911
    • 10000 $1.37911
    		Buy Now
    STL140N4LLF5 Digi-Reel 1
    • 1 $3.93
    • 10 $2.581
    • 100 $3.93
    • 1000 $1.37911
    • 10000 $1.37911
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    STL140N4LLF5 Reel 3,000
    • 1 -
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    • 10000 $1.32413
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    Avnet Americas STL140N4LLF5 Reel 26 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.3559
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    Mouser Electronics STL140N4LLF5 3,000
    • 1 $2.84
    • 10 $2.29
    • 100 $1.69
    • 1000 $1.35
    • 10000 $1.32
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    STMicroelectronics STL140N4LLF5 3,000 1
    • 1 $2.78
    • 10 $2.24
    • 100 $1.66
    • 1000 $1.4
    • 10000 $1.4
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    Avnet Silica STL140N4LLF5 17 Weeks 3,000
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    EBV Elektronik STL140N4LLF5 27 Weeks 3,000
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    Win Source Electronics STL140N4LLF5 2,600
    • 1 -
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    • 100 $1.6761
    • 1000 $1.4058
    • 10000 $1.4058
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    Find more TL140 price and stock on Findchips.com

    TL140 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TL1405800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 14POS TOP ENTRY 5MM PCB Original PDF

    TL140 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235 PDF

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 PDF

    ATC100B6R2CT500X

    Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208FV PTFB213208SV 320-watt PTFB213208FV H-34275G-6/2 ATC100B6R2CT500X TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126 PDF

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 PDF

    CC104

    Abstract: tip129
    Text: TL-10 PR-650A Model TL-10 Model PR-650A Model PR-28A 40kV High Voltage DMM Probe If the voltages you need to measure are above the specifications of general purpose probes, B+K Precision has a higher voltage probe for you. Features Attenuation Voltage AC


    Original     		TL-10 PR-650A PR-28A x1000 1000Mâ silic010 CC104 tip129 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 PDF

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131 PDF

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original     		PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O PDF

    TL2012

    Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL2012 TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221 PDF

    DMM STARTER KIT

    Abstract: No abstract text available
    Text: TL-130A CP-3 Model TL-130A General Purpose DMM Kit Model CP-3 If you need only one basic accessory kit for your meter, this is the one. Attach probes or clips to the sheath plug to complete your test. Soft, flexible silicone leads make movement easy. Kit is voltage


    Original     		TL-130A IEC61010-2-031 TL-50 2831C 305mm) HV-44A, PR-28A 267mm) 1000D DMM STARTER KIT PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PTFB183408SV PTFB183408SV 340-watt PDF

    TL235

    Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
    Text: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz


    Original     		PTFB091507FH PTFB091507FH H-34288-4/2 16ubstances. TL235 LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081 PDF

    TL244

    Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134 PDF

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239 PDF

    TL117

    Abstract: c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL117 c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183408SV PTFB183408SV 340-watt PDF

    4871I

    Abstract: No abstract text available
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208SV PTFB213208SV 320-watt H-37275G-6/2 4871I PDF