MCP 67 MV- A2
Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1
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KAA00B209M-TGxx
16Mx16)
Flash/32M
2Mx16)
UtRAM/128M
2Mx16x4Banks)
127-Ball
80x12
08MAX
MCP 67 MV- A2
SAMSUNG MCp
samsung "nor flash" sensing
nand mcp samsung ka
SAMSUNG mcp Reliability spec
Product Selection Guide samsung 2013
MCP NAND, DRAM, NOR
SAMSUNG 256Mb mcp Qualification Reliability
14CLK
UtRAM Density
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6480YHSEM4G05TWF
Abstract: DS968
Text: 8M x 64 Bit SDRAM DIMM PC100/133 SYNCHRONOUS DRAM DIMM 6480YsSEM4G05TWF 168 Pin 8Mx64 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description Pin# The Module is a 8Mx64 bit, 5 chip, 168 Pin DIMM module consisting of 4 2Mx16x4 (TSOP)
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PC100/133
6480YsSEM4G05TWF
8Mx64
2Mx16x4
256x8
PC100/133
DS968-6480Y
6480YHSEM4G05TWF
DS968
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SAMSUNG MCP
Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Text: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0
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KBE00D002M-F407
16Mx16)
2Mx16x4Banks)
128Mb
137-Ball
80x14
SAMSUNG MCP
F407
KBE00D002M-F407
samsung "nor flash" sensing
UtRAM Density
137FBGA
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DS968
Abstract: 6480YESEM4G05TWF PC-100
Text: 8M x 64 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 6480YESEM4G05TWF 168 Pin 8Mx64 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The Module is a 8Mx64 bit, 5 chip, 168 Pin DIMM module consisting of 4 2Mx16x4 (TSOP) SDRAM
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PC-100
PC-100
6480YESEM4G05TWF
8Mx64
DS968
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SAMSUNG MCP
Abstract: MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec
Text: Preliminary MCP MEMORY KAA00B606A Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/64M Bit(4Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. July 18, 2002
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KAA00B606A
16Mx16)
Flash/64M
4Mx16)
UtRAM/128M
2Mx16x4Banks)
90/100ns
127-Ball
80x12
SAMSUNG MCP
MCP NOR FLASH SDRAM
MCP 67 MV- A2
UtRAM Density
SAMSUNG mcp Reliability spec
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udimm
Abstract: DS9471
Text: 8M x 64 Bit PC100/133 SDRAM µDIMM PC100/133 SYNCHRONOUS DRAM MicroDIMM 6480YxSBM4G05TWJ 144 Pin 8Mx64 SDRAM µDIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 8Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 2Mx16x4 (TSOP)
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PC100/133
PC100/133
6480YxSBM4G05TWJ
8Mx64
A10/AP
DS947-1
udimm
DS9471
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D7678
Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise
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WED416S8030A
2Mx16x4
WED416S8030A
83MHz
100MHz)
83MHz)
WED416S8030A10SI
2Mx16bitsx4banks
100MHz
WED416S8030A12SI
D7678
WED416S8030A10s
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IS42S81600B
Abstract: 42S16800B IS42S16800B-7TLI 2MX16X4 IS42S16800B IS42S16800B-6TL
Text: IS42S81600B IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JUNE 2009 FEATURES • Clock frequency: 167, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S81600B
IS42S16800B
16Meg
128-MBIT
128Mb
IS42S81600B
42S16800B
IS42S16800B-7TLI
2MX16X4
IS42S16800B
IS42S16800B-6TL
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2MX16X4
Abstract: IS42S32400AL
Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves
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IS42S81600AL,
IS42LS81600AL
IS42S16800AL,
IS42LS16800AL
IS42S32400AL,
IS42LS32400AL
16Meg
128-MBIT
128Mb
2MX16X4
IS42S32400AL
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IS45S16800E
Abstract: 2MX16X4 IS45S16800E-7CTNA1 is45s16800e-7tla2 IS45S16800E-6BLA
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 DECEMBER 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
54-pin
IS45S16800E
2MX16X4
IS45S16800E-7CTNA1
is45s16800e-7tla2
IS45S16800E-6BLA
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Untitled
Abstract: No abstract text available
Text: IS42S81600E IS42S16800E 16M x 8, 8M x16 FEBRUARY 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S81600E
IS42S16800E
128Mb
IS42S81600E
IS42S16800E-75EBLI
54-ball
IS42S81600E,
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Untitled
Abstract: No abstract text available
Text: IS42S81600 IS42S16800 16M x 8, 8M x16 PRELIMINARY INFORMATION AUGUST 2008 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S81600
IS42S16800
128Mb
IS42S81600
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lEXRA lx5280
Abstract: RTL8181 lx5280 RTL818 bt 1690 scr Lexra SA2400 lx5280 datasheet realtek 802.11 AMF 4.0 DATASHEET
Text: RTL8181 Wireless LAN Access Point/Gateway Controller DATA SHEET ISSUE 4: June 10, 2003 RTL8181 Revision History Issue No 1 Issue Revision 0.1 Issue 2 0.2 Issue 3 0.3 Issue 4 1.0 CONFIDENTIAL Details of Change Originator David Hsu First Release 1. Add a section about system configuration.
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RTL8181
RTL8181
MO-205.
292LD
17x17mm)
lEXRA lx5280
lx5280
RTL818
bt 1690 scr
Lexra
SA2400
lx5280 datasheet
realtek 802.11
AMF 4.0 DATASHEET
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Untitled
Abstract: No abstract text available
Text: IS45S81600B IS45S16800B ISSI 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION AUGUST 2005 • Clock frequency: 143, 100 MHz OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a
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IS45S81600B
IS45S16800B
16Meg
128-MBIT
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lg r40 MOTHERBOARD CIRCUIT diagram
Abstract: I7 motherboard circuit diagram intel i5 MOTHERBOARD pcb CIRCUIT diagram schematic diagram converter fdd to usb MC3064 SW801 317 jrc VOLTAGE REGULATOR ATI RAGE mobility m1 CN603 C144* transistor REPLACEMENT
Text: ORDER NO. CPD0010002C0 Notebook Computer CF-48 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden T .for Italy P .for Spain Model Number Reference The models in the CF-48 series are numbered in accordance with the types of the CPU, LCD
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CPD0010002C0
CF-48
CF-48
CN601
MMZ2012R102A
JK601
CN503
FH12-8S-1SH
lg r40 MOTHERBOARD CIRCUIT diagram
I7 motherboard circuit diagram
intel i5 MOTHERBOARD pcb CIRCUIT diagram
schematic diagram converter fdd to usb
MC3064
SW801
317 jrc VOLTAGE REGULATOR
ATI RAGE mobility m1
CN603
C144* transistor REPLACEMENT
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C675
Abstract: RADEON MOBILITY 9000 radeon 7500 PCI 1520 78l05 so8 lf-h80p ST Z849 FD10JK4 Alc201A Preface Notebook Computer
Text: Preface Notebook Computer 8880/888E Series Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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8880/888E
C675
RADEON MOBILITY 9000
radeon 7500
PCI 1520
78l05 so8
lf-h80p
ST Z849
FD10JK4
Alc201A
Preface Notebook Computer
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ba 5996
Abstract: ic 7490 pin diagram decade counter 7490 Decade Counter pin connections RCA 7745 simple heart rate monitor circuit diagram 74x153 ls244 internal architecture of 7490 IC STPC
Text: STPC VEGA X86 CORE PC COMPATIBLE SOC with ETHERNET and USB PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ PENTIUM® II CLASS PROCESSOR CORE 64-BIT SDRAM CONTROLLER RUNNING AT UP TO 100 MHZ PCI 2.1 COMPLIANT MASTER/SLAVE
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64-BIT
DMA-66
16-BIT
PBGA388
32-bit
ba 5996
ic 7490 pin diagram decade counter
7490 Decade Counter pin connections
RCA 7745
simple heart rate monitor circuit diagram
74x153
ls244
internal architecture of 7490 IC
STPC
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Untitled
Abstract: No abstract text available
Text: IS42S81600 IS42S16800 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES • Clockfrequency:200,166,143,133MHz • Fullysynchronous;allsignalsreferencedtoa positive clock edge MARCH 2009 OVERVIEW
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IS42S81600
IS42S16800
128Mb
128Mbà
IS42S81600à
IS42S16800à
IS42S81600,
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Untitled
Abstract: No abstract text available
Text: IS45S81600B IS45S16800B ISSI 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge APRIL 2006 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS45S81600B
IS45S16800B
16Meg
128-MBIT
128Mb
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IS42S81600F
Abstract: No abstract text available
Text: IS42/45S81600F IS42/45S16800F 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge MAY 2012 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42/45S81600F
IS42/45S16800F
128Mb
54-pin
IS42S81600F
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Untitled
Abstract: No abstract text available
Text: IS42/45R81600E IS42/45R16800E 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES • Clockfrequency:133,125MHz • Fullysynchronous;allsignalsreferencedtoa positive clock edge APRIL 2010 OVERVIEW
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IS42/45R81600E
IS42/45R16800E
128Mb
128Mbà
IS42/45R81600Eà
IS42/45R16800Eà
IS45R16800E-75BLA2à
IS45R16800E-8BLA2à
54-ballà
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Untitled
Abstract: No abstract text available
Text: IS42S16800A 8Meg x16 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge JUNE 2007 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS42S16800A
128-MBIT
128Mb
x16x4
54-pin
Mode96
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Untitled
Abstract: No abstract text available
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge DECEMBER 2011 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
54-pin
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Untitled
Abstract: No abstract text available
Text: IS42S81600D IS42S16800D 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge JULY 2008 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S81600D
IS42S16800D
16Meg
128-MBIT
128Mb
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