1MX16
Abstract: KMM5362203C2W KMM5362203C2WG
Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW/CWG to KMM5362203C2W/C2WG caused by PCB revision .
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Original
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PDF
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KMM5362203C2W/C2WG
2Mx36
1MX16
KMM5362203CW/CWG
KMM5362203C2W/C2WG
KMM5362203C2W
KMM5362203C2WG
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KMM5362203C2W
Abstract: KMM5362203C2WG km416c1200 KM44C1003
Text: DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW/CWG to KMM5362203C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE
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Original
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PDF
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KMM5362203C2W/C2WG
KMM5362203CW/CWG
KMM5362203C2W/C2WG
1Mx16
KMM5362203C2W
2Mx36bits
1Mx16bits
KMM5362203C2WG
km416c1200
KM44C1003
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KMM5362205C2W
Abstract: KMM5362205C2WG
Text: DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE
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Original
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PDF
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KMM5362205C2W/C2WG
KMM5362205CW/CWG
KMM5362205C2W/C2WG
1Mx16
KMM5362205C2W
2Mx36bits
1Mx16bits
KMM5362205C2WG
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1MX16
Abstract: KMM5362205C2W KMM5362205C2WG
Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base, Quad CAS EDO Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .
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Original
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PDF
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KMM5362205C2W/C2WG
2Mx36
1MX16
KMM5362205CW/CWG
KMM5362205C2W/C2WG
KMM5362205C2W
KMM5362205C2WG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs
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OCR Scan
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PDF
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KMM5362203BW/BWG
KMM5362203BW/BWG
1Mx16
KMM5362203BW
2Mx36bits
1Mx16bits
42-pin
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .
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OCR Scan
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PDF
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KMM5362205C2W/C2WG
2Mx36
KMM5362205CW/CWG
KMM5362205C2W/C2WG
1Mx16
KMM5362205C2W
2Mx36bits
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .
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OCR Scan
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PDF
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KMM5362203C2W/C2WG
2Mx36
1MX16
KMM5362203CW
KMM5362203C2W
KMM5362203C2W/C2WG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer.
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OCR Scan
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PDF
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KMM5362205C2W/C2WG
2Mx36
1MX16
KMM5362205CW/CWG
KMM5362205C2W/C2WG
KMM5362205C2W
2Mx36bits
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