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    2N 5551 TRANSISTOR Search Results

    2N 5551 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N 5551 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 2N 5551

    Abstract: 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550
    Text: HN/2N 5550/5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92


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    2N5400 2N5401 100MHz transistor 2N 5551 5551 transistor BR 5551 5551 transistor 5551 BR 5550 2n 5551 transistor 5551 npn 2N5551 2N5550 PDF

    bo 615

    Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
    Text: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297


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    8F299 bo 615 ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126 PDF

    2n 5550

    Abstract: 2N5551 diodes inc 2n5551
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N 5551* NPN Silicon COLLECTOR 3 MAXIMUM RATINGS Symbol 2N5550 2N5551 Unit C o lle c to r-E m itte r Voltage Rating VCEO 140 160 Vdc C o lle c to r-B a s e Voltage


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    2N5550/D 2N5550 2N5550 2N5551 2n 5550 2N5551 diodes inc 2n5551 PDF

    2N5550

    Abstract: 5551 2n 5551 2N5551 motorola 2NS551 2NSS51
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Vdc C o lle c to r-E m itte r Voltage VCEO 140 160 C o lle c to r-B a s e Voltage


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    2N5550 2N5551* 2N5550 2N5551 1N914 2NS851 5551 2n 5551 2N5551 motorola 2NS551 2NSS51 PDF

    2N555

    Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


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    2N5400 2N5401 2N5550 2N5551 2N5400, 2N5401 2N5550, O-92A 2N5400 2N555 5401 transistor 2N 5551 5551 555-1 transistor 2N5401 1000C PDF

    2N5550 EBC

    Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
    Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


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    2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400 PDF

    ZTX558

    Abstract: PSA42
    Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors show n in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Max Type V CBO V CEO M ax V CEIsat 'c V V mA 400 400


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    ZTX758 ZTX558 ZTX757 PSA92 ZTX756 PSA93 BF491 ZTX755 ZTX555 ZTX754 PSA42 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


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    2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550, PDF

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 PDF

    639 TRANSISTOR PNP

    Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN PDF

    2SK2540

    Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
    Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )


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    2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F PDF

    transistor bf 422 NPN

    Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor PDF

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor PDF

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310 PDF

    2N5400

    Abstract: No abstract text available
    Text: 2N5400 2N5401 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors fo r general purposes and especially in telephony applications and encapsulated in a TO-92 package.


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    2N5400 2N5401 2N5550 2N5401 PDF

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B PDF

    2N5551

    Abstract: Transistor TO-92 2N5551
    Text: Hcmam TQ -92 Piasti -E n cap su late T ran sisto rs 2N 55 51 TRANSISTOR N P N FEATURES Power dissipation PCM : Collecto 0.625 W (Tamb=25°C) cu ent - 0.6 A Icm Collecto -base voltage : 180 V Ope ating and storage junction temperature range V ( brjcbo Tj> Tstg:-55"C to+15Q”C


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    2N5551 30MHz 100mA Transistor TO-92 2N5551 PDF

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor PDF

    transistor 2N 5551

    Abstract: 2N5550 FT-H30
    Text: Transistors 2NSSSC USHA INDIA LTD AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VS 4 =140V * Collector Dissipation; Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta =25ÖC) C h a ra c te ris tic S ym b o l Rating U nit Collector-Base Voltage Vcso 160 V


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    2N5550 625mW 1QHzto15 30QfjS, transistor 2N 5551 2N5550 FT-H30 PDF

    bf758

    Abstract: BF757 BF299 Thomson-CSF amplifier BF 759 BF416 BF493 HIGH VOLTAGE VIDEO AMPLIFIER BF643 BF859
    Text: high voltage video amplifier transistors S> transistors haute tension vidéo-am plification ih o m s o n -c s f Type N PN M axim u m ratin gs PNP Ptot Ptot / T C haracteristics at Tam |, = 25°C v C EO •»21E! / Vc e / 1C Tam b = 25 °C min m in-m ax (W


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    PDF

    TE 555-1

    Abstract: No abstract text available
    Text: 2N5550 2N5551 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N -P -N high-voltage small-signal transistors fo r general purposes and especially te le p h o n y applications and encapsulated in a T O -9 2 package.


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    2N5550 2N5551 TE 555-1 PDF

    2n6218

    Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533
    Text: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18


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    013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2n6218 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 PDF

    transistor cc 5551

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • G eneral purpose sw itching and am plification


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    2N5401 SC-43 transistor cc 5551 PDF

    ZTX458

    Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
    Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO


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    ZTX658 ZTX758 ZTX458 ZTX558 ZTX6575 ZTX757 MPSA425 MPSA92 BF393 BF493 BF493 BF392 MPSA92 ZTX558 ZTX757 ZTX758 2N5401 BF391 PDF