2N555 Search Results

2N555 Price and Stock

Filter by Manufacturer

Select Manufacturer


Rochester Electronics LLC 2N5551RL1G TRANS NPN 160V 0.6A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5551RL1G	Bulk	103,387		3,806	1 - 10 - 100 - 1000 - 10000 $0.08	Buy Now
onsemi 2N5551TF TRANS NPN 160V 0.6A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5551TF	Cut Tape	44,981		1	1 $0.28 10 $0.17 100 $0.1062 1000 $0.06907 10000 $0.06907	Buy Now
	2N5551TF	Reel	44,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.04796	Buy Now
Avnet Americas	2N5551TF	Reel		9 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2N5551TF	Reel		9 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	2N5551TF		1,976			1 $0.25 10 $0.144 100 $0.099 1000 $0.069 10000 $0.043	Buy Now
Newark	2N5551TF	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Rochester Electronics	2N5551TF		1,320		1	1 $0.0371 10 $0.0371 100 $0.0349 1000 $0.0315 10000 $0.0315	Buy Now

TME	2N5551TF		14		1	1 $0.2647 10 $0.1682 100 $0.0904 1000 $0.0518 10000 $0.0437	Buy Now
EBV Elektronik	2N5551TF			11 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N5551TF		20,000			1 - 10 - 100 - 1000 - 10000 $0.0451	Buy Now
onsemi 2N5550TAR TRANS NPN 140V 0.6A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5550TAR	Cut Tape	37,530		1	1 $0.32 10 $0.195 100 $0.1221 1000 $0.07995 10000 $0.07995	Buy Now
	2N5550TAR	Ammo Pack	32,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.05597	Buy Now
Avnet Americas	2N5550TAR	Ammo Pack		8 Weeks	16,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	2N5550TAR		6,895			1 $0.28 10 $0.167 100 $0.123 1000 $0.076 10000 $0.049	Buy Now
Newark	2N5550TAR	Bulk			6,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
EBV Elektronik	2N5550TAR			10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Flip Electronics	2N5550TAR		130,336			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	2N5550TAR		14,000			1 - 10 - 100 - 1000 - 10000 $0.0461	Buy Now
onsemi 2N5550TFR TRANS NPN 140V 0.6A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5550TFR	Cut Tape	17,626		1	1 $0.28 10 $0.171 100 $0.1064 1000 $0.06927 10000 $0.06927	Buy Now
	2N5550TFR	Reel	16,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.0481	Buy Now
Avnet Americas	2N5550TFR	Reel		8 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	2N5550TFR		8,645			1 $0.26 10 $0.157 100 $0.098 1000 $0.065 10000 $0.042	Buy Now
Newark	2N5550TFR	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Bristol Electronics	2N5550TFR		790		27	1 - 10 - 100 $0.0938 1000 $0.0562 10000 $0.0562	Buy Now

TME	2N5550TFR				1	1 $0.3222 10 $0.2167 100 $0.1008 1000 $0.057 10000 $0.0462	Get Quote
EBV Elektronik	2N5550TFR			10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N5550TFR		16,000			1 - 10 - 100 - 1000 - 10000 $0.0382	Buy Now
onsemi 2N5551TA TRANS NPN 160V 0.6A TO-92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5551TA	Ammo Pack	16,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.04796	Buy Now
Avnet Americas	2N5551TA	Bulk		11 Weeks, 4 Days	2,000	1 $0.05 10 $0.05 100 $0.05 1000 $0.05 10000 $0.047	Buy Now
	2N5551TA	Ammo Pack		16 Weeks, 4 Days	1	1 $0.204 10 $0.143 100 $0.076 1000 $0.076 10000 $0.076	Buy Now
Mouser Electronics	2N5551TA		22,746			1 $0.28 10 $0.15 100 $0.107 1000 $0.069 10000 $0.042	Buy Now
Newark	2N5551TA	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.076	Buy Now
	2N5551TA	Cut Tape	17		1	1 $0.311 10 $0.197 100 $0.13 1000 $0.092 10000 $0.092	Buy Now
Rochester Electronics	2N5551TA		3,139		1	1 $0.0371 10 $0.0371 100 $0.0349 1000 $0.0315 10000 $0.0315	Buy Now

TME	2N5551TA		1,325		1	1 $0.2433 10 $0.1553 100 $0.0947 1000 $0.0602 10000 $0.0414	Buy Now
Avnet Asia	2N5551TA			9 Weeks	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	2N5551TA		12,000	10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	2N5551TA		16,000	11 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N5551TA		10,000			1 - 10 - 100 - 1000 - 10000 $0.0387	Buy Now
New Advantage Corporation	2N5551TA		12,000		1	1 - 10 - 100 - 1000 - 10000 $0.1435	Buy Now

Find more 2N555 price and stock on Findchips.com

2N555 Datasheets (337)

Part	Manufacturer	Description	Datasheet Type	PDF
2N555	Germanium Power Devices	Germanium Power Transistors	Scan	PDF
2N555	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N555	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N555	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N555	Unknown	GE Transistor Specifications	Scan	PDF
2N555	Unknown	Cross Reference Datasheet	Scan	PDF
2N555	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N555	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N555	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2N555	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N555	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N555	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N555	Semitron	Germanium Power Transistors	Scan	PDF
2N555	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF

2N5550	Central Semiconductor	Small Signal Transistors TO-92 Case (Continued)	Original	PDF
2N5550	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	Original	PDF
2N5550	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	Original	PDF
2N5550	Korea Electronics	TRANS GP BJT NPN 140V 0.6A 3TO-92	Original	PDF
2N5550	On Semiconductor	Amplifier Transistors NPN Silicon	Original	PDF
2N5550	On Semiconductor	Amplifier Transistor NPN	Original	PDF

...

2N555 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5551 Abstract: No abstract text available Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage	OCR Scan	2N5551 100MHz 2N5551	PDF
Untitled Abstract: No abstract text available Text: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V\|0B\|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0	OCR Scan	2N5556 2N5557 2N5558 2N6451 2N6452 2N6453 2N64S4 NF5101 2N6449 2N6450	PDF
Untitled Abstract: No abstract text available Text: Transistor IC Transistors DIP SMDType Type SMD Type Product specification 2N5551 Features Switching and amplification in high voltage Applications such as telephony Low current max. 600mA High voltage(max.180V) Absolute Maximum Ratings Ta = 25 Parameter Symbol	Original	2N5551 600mA) 100MHz	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION	Original	2N5551 2N5551L-x-AB3-R 2N5551G-x-AB3-R OT-89 2N5551L-x-T92-B 2N5551G-x-T92-B 2N5551L-x-T92-K 2N5551G-x-T92-K 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B	PDF
2N5551 circuit Abstract: 2N5550 2N5551 2N555 1N914 Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage	Original	2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914	PDF
2N555 Abstract: 2N5559 Text: SavantIC Semiconductor Product Specification 2N5559 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power	Original	2N5559 2N555 2N5559	PDF
transistor 2n5550 Abstract: 2N5550 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	2N5550 C-120 2N5550Rev190701 transistor 2n5550 2N5550	PDF
2N5551B Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU	PDF
Untitled Abstract: No abstract text available Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50	OCR Scan	Transistors/TO-92 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551	PDF
transistor 2n5550 Abstract: 2N5550 Text: SEMICONDUCTOR 2N5550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 5550 K 3 No. Item 816 2 4 Marking Description 2N Series Name 5550 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year	Original	2N5550 transistor 2n5550 2N5550	PDF
2N555 Abstract: 2N5550S SOT-23 2N5550S Text: SEMICONDUCTOR 2N5550S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZP 1 2 Item Marking Description Device Mark ZP 2N5550S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	2N5550S OT-23 2N555 2N5550S SOT-23 2N5550S	PDF
transistor 2n5550 Abstract: 2N5550 Text: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V N E K Low Leakage Current. G D J : ICBO=100nA Max. , VCB=100V	Original	2N5550 100nA 100MHz transistor 2n5550 2N5550	PDF
2n5248 Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460 Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640	Original	2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460	PDF
2N5552 Abstract: 432 t TO-5 stud Text: 2N5552 POWER TRANSISTORS 5552-4 10 Amp, 120V, Planar NPN DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for power supply pulse amplifier and similar high efficiency power	OCR Scan	2N5552 10MHz 250ma 250ma 432 t TO-5 stud	PDF

transistor 2N5401 Abstract: 2N5401 2N5551 CMLT5554 Text: CMLT5554 SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process	Original	CMLT5554 2N5551 2N5401 OT-563 100MHz 20-January transistor 2N5401 CMLT5554	PDF
2N5550 Abstract: No abstract text available Text: 2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony Low current max.600mA	Original	2N5550 600mA) 8-Mar-2010 100MHz 2N5550	PDF
2N5551 Abstract: No abstract text available Text: 2N5551 NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C PD	Original	2N5551 270TYP 2N5551	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified	Original	2N5551 25deg C-120	PDF
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5551 Features • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.	Original	2N5551 100uAdc, 10uAdc, 35Vdc 120Vdc, 300us, 10Vdc, 10mAdc)	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5551 Features • • • NPN General Purpose Amplifier Transistor This device is designed for general purpose high voltage amplifiers	Original	2N5551 100uAdc,	PDF
2N5551 Abstract: No abstract text available Text: 2N5551 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.6 A Collector-base voltage V (BR)CBO :180 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C	Original	2N5551 30MHz 100mA 2N5551	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	2N5551 100uA	PDF
2N4410 Abstract: No abstract text available Text: SEMICONDUCTOR ¡m 2N4410 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and sw itches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. AbSOlUtG Maximum RâtinÇjS	OCR Scan	2N4410 2N5551 2N4410	PDF
2n5555 Abstract: 2N5555-D Text: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10	Original	2N5555 226AA) 2n5555 2N5555-D	PDF

2N555 Search Results

2N555 Price and Stock

Rochester Electronics LLC 2N5551RL1G

onsemi 2N5551TF

onsemi 2N5550TAR

onsemi 2N5550TFR

onsemi 2N5551TA

2N555 Datasheets (337)

2N555 Datasheets Context Search

2N5551

Untitled

Untitled

Untitled

2N5551 circuit

2N555

transistor 2n5550

2N5551B

Untitled

transistor 2n5550

2N555

transistor 2n5550

2n5248

2N5552

transistor 2N5401

2N5550

2N5551

Untitled

Untitled

Untitled

2N5551

Untitled

2N4410

2n5555