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    Microchip Technology Inc 2N6989U

    TRANS 4NPN QUAD 50V 800MA 20CLCC
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    Microchip Technology Inc 2N6989UX

    TRANS 4NPN QUAD 50V 800MA 20CLCC
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    Microchip Technology Inc JAN2N6987

    TRANS 4PNP QUAD 60V 600MA
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    Microchip Technology Inc JAN2N6989

    TRANS 4NPN QUAD 50V 800MA TO-116
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    Microchip Technology Inc JANSF2N6988

    TRANS 4PNP 60V 600MA 14FLATPACK
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    2N 698 Datasheets (109)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N698 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N698 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original PDF
    2N698 Central Semiconductor Various Transistors Scan PDF
    2N698 Central Semiconductor Transistor Selection Guide Scan PDF
    2N698 General Diode Transistor Selection Guide Scan PDF
    2N698 Micro Electronics Semiconductor Devices Scan PDF
    2N698 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N698 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N698 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N698 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N698 Unknown GE Transistor Specifications Scan PDF
    2N698 Unknown GE Transistor Specifications Scan PDF
    2N698 Unknown Cross Reference Datasheet Scan PDF
    2N698 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N698 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N698 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N698 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N698 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N698 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N698 Unknown Vintage Transistor Datasheets Scan PDF

    2N 698 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    BD699

    Abstract: BD697 BD609 BD698 BD595 MJE34 BD601 BD699A BD695 BD597
    Text: / lC = 8 0 A BD595 BD695 B D 695A BD597 BD697 BD 697A 2N 6043 BD599 BD699 BD 699A 2N 6045 BD601 BD701 2N 6045 11 -8 < < 2 .0 H fe @ 'c Am p V CE (sat @ 'C V o lts Am p fT M Hz PD Watts Case J A le = 6.0 MJE41 M JE41A MJE41B MJE41C V PNP utw ^O NPN MJE42


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    MJE41 MJE42 MJE41A MJE42A MJE41B MJE42B MJE41C MJE42C BD595 BD596 BD699 BD697 BD609 BD698 MJE34 BD601 BD699A BD695 BD597 PDF

    2N698

    Abstract: transistor BF 698 2n 698 H22B
    Text: 2N 698 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TR A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L - LF amplification A m plification B F - Switching Commutation VCEO 60 V I121 E 150 mA 2 0 -6 0 h 40 MHz Maximum power dissipation Casa TO-39


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    2N698 2N698 transistor BF 698 2n 698 H22B PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-116 PACKAGE T O -116 14 PIN C E R A M IC D IP yp i* T O -116 w 11 f VcEO sus VOLTS Ic (m ax) AM PS hfE @ V ^ ce m in/m ax @ m A /V VcE(sat) @ Ic^B V @ m A /inA C <£P P (M H z) 2N 6987 60 .6 100/300@ 150/10


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    O-116 500/l PDF

    petercem

    Abstract: transtronic CONTROL10 M-0320 ABB transtronic
    Text: ABB Control 10, rue Ampère, Z.l. - B.P. 114 69685 Chassieu cedex France T \/n û Tél. 72.22.17.22 - Fax. 78.90.27.58 ' Y P “ TRANSTRONIC Typ TC 030 X E FHN2N X E FHP 2N PM 2587 - X - 03/83 1. Electronic measuring transformer for d.c., a.c., pulsating a.s.o. .currents or voltages with a high iso­


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    706a

    Abstract: 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel
    Text: r SEMELAB LT]> 37E J> 6133167 □□□□□12 =] • SULB ■c 2C 2C “~2C S-2C * 2N 415 425 444 746 696 HI-REL HI-REL HI-REL HI-REL SCREEN NPN NPN NPN NPN NPN * * T077 T077 T077 T077 T039 35 75 35 50 60 0.03 0.1 0.05 0.1 0.2 lOOmin 35min 40min 35min 40min


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    35min 40min 5/10m 5/50m 75min 20min l/10m 706a 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel PDF

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 PDF

    P2N60e

    Abstract: 2N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet M T P 2N 60E TM O S E -F E T ™ P o w er Field E ffe c t Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon G te T h is h ig h v o lta g e M O S F E T u s e s an a d v a n c e d te rm in a tio n


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    MTP2N60E P2N60e 2N60E PDF

    TIC 2260

    Abstract: si5464 RF Transistor 2n5038
    Text: 2N5038, 2N5039, 2N6496 File N um ber 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors D evices for S w itchin g and A m p lifie r C ircuits in Industrial and C o m m ercial A p p licatio n s Features: • ■ ■ ■ M axim um operating area curves for dc and pulse operation


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    2N5038, 2N5039, 2N6496 TIC 2260 si5464 RF Transistor 2n5038 PDF

    U3540

    Abstract: 2n5039
    Text: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications


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    2N5038, 2N5039, 2N6496 43G2271 GD4044fl 2NS038, 2NS039 2N6496 22377R' U3540 2n5039 PDF

    RCA-2N5038

    Abstract: 2N5038 equivalent 2N6496 2N6496 RCA 2N5039-1 AALI 2N5038 2N5039 2n5038 sol
    Text: 3875081 G E SOLID S T A T E ^ ^ | 3ö7SDai 0017117 3 ^r . S 3 ^ /3 High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors


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    STATE111 2N5038, 2N5039, 2N6496 RCA-2N5038 2N5039 2N3678 2CS-22377R' 2N5038 equivalent 2N6496 RCA 2N5039-1 AALI 2N5038 2n5038 sol PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    TRANSISTOR BC 313

    Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V


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    BSX52 BSW21 BSW22 BSX51 BSW22 TRANSISTOR BC 313 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 2N 2222 2221-2N 2N2243 BC211 2N2195 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    aa2n

    Abstract: 2N2195 2N2243 2N1420 3053-1000 2N2192 2N2219 2N696 A-80080 2N698
    Text: general purpose, amplification, switching - metal case commutation, am plification, usage général boît \e r m éta I th o m so n -csf T ype C h a r a c t e r is tic s a t 25 °C M a x im u m ra tin g s NPN PNP P to t h21E v CEO VCER* / >C V C E sat !


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    2N696 aa2n 2N2195 2N2243 2N1420 3053-1000 2N2192 2N2219 2N696 A-80080 2N698 PDF

    tt 2194

    Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
    Text: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs


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    2N5415 2N5416 tt 2194 LTLS 2n3054 2N2243 aa2n BUX54 2N2192 2N2195 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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    thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    2n5038

    Abstract: FO152
    Text: 3875081 G E SOLID STATE ^ ^ 1 3875081 0017117 3 I"> T - i W Ï High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors


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    2N5038, 2N5039, 2N6496 2N6496 2n5038 FO152 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    2N2243

    Abstract: H21E 2N3439 pnp case to-39
    Text: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15


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    npn 60V 600mw

    Abstract: 2195A 2243A 150PF 2n2539 2N699 MA8003
    Text: General Purpo/e Tran/i/tor/ npn TO- 18 10-106 it r E lectrical C haracteristics @ T & = 25°C M axim u m Ratings TYPE NO . •c Pd NPN @Ta = bv Cbo L V CEO b v EBo h FE @ V q e @ >C max. m in./m ax. 25°C V C E sat @ l C / l B C ob CASE fT @ l C max. min.


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    O-I06 250mW 500mA 200MHz O-106 npn 60V 600mw 2195A 2243A 150PF 2n2539 2N699 MA8003 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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