2N739A

Contextual Info: small signal transistors 71 SILICON NPN PLANAR RATED BREAKDOWN VOLTAGES TYPE NUMBERS • 2N 929 2N 930 2N 756 2N 757 2N 758 2N 759 2N 760 2N 929A 2N 930A 2N 930B 2N 2586 2N 756A 2N 757A 2N 2483 2N 2484 2N 2484A 2N 3117 2N 758A 2N 758B 2N 759A 2N 759B 2N 760A

LSE B9

Abstract: LSE B6
Contextual Info: IUCROSENI CORP/ ÜIATERTOÜIN 50E » T347Tb3 POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN D O lS im JANTX, JANTX, JANTX, JANTX, & & & & 5R4 • U N I T JANTXV JANTXV JANTXV JANTXV 2N 5664 2N 5665 2N 5666 2N 5667 T -33-07 F EA T U RE S • Meets MIL-S-19500/455

TIP 22 transistor

Abstract: 2N5004 2N5002 2N5154 circuit 2N 3055 TRANSISTOR bd 147 Transistor Bd 140 tip 147 cw 2N5005 2N5152
Contextual Info: TYPES 2N5002, 2N5004, 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W IT H COM PU TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y For Complementary Use with 2N 50 03, 2N 50 05, 2N 51 51, and 2N 51 53 15 mJ Reverse Energy Rating w ith lc = 10 A and 4 V Reverse Bias

736 le

Abstract: 2N736 2n7352 N735A n735 2n735 2n 736 BR 736 2N736B B30100
Contextual Info: 2N 735, 2N 735A 2N736, 2N 736B NPN S IL IC O N T R A N S IS T O R S , E P IT A X IA L P L A N A R T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X * L F small signal amplification A m plification BF p etits signaux - Switching Commutation

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PA CK A G E N PN T O -254 b v ceo VOLTS PEA K Ic A M PS I*FE min/max Ic @ V CE A V VOLTS max Ic @ I b A A 2N 7368 80 10.0 30-140 30.0/2.0 1.0 5.0/0.5 N SP 4070 100 10.0 5.0/5.0 0.8 5.0/0.5 N SP4071

HE144

Abstract: PDIP24 JEP95 tqfp128 weight MDS727
Contextual Info: ZMD-Standard November 1995 Package PDIP8 300 mil MDS 729 Supersedes Edition 01.95 Dimensions in millimetres Based on IEC 191-2N: Type 050G02 E 1 Dimensions L A1 A Seating Plane Z b1 e 0,254 M c θ 8 e1 1 D Pin 1 Index area Dimensions of Sub-Group B1 Dimensions of Sub-Group C1

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST 11 PNP QÛ LU z > > un BR E A K D O \ V O LT A G E h FZE SAT V O L T A iGES M a x. V CE (V) 'c (A) M in . M ax. 'c (A) 'b (A) V CE (V) V BE (V) CASE V CB V CE 2N 6468 TO -66 130 120 5 4 1.5 15 150 1.5 0.15

TIP 110 transistor

Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature

SCR GE C5u

Abstract: scr C203 scr c108 SCR C103 C5U SCR SCR GE C203 GE scr C5u C5U SCR GE 20 watt emergency light circuit emergency light circuit SCR
Contextual Info: GE TYPE JEDEC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION C3 2N 877-81"1 3 0 -2 0 0 •t r m s :i M a x . R M S on-state cu rre n t (A C103 C 203 - 2 N 5 0 6 0 -6 4 3 0 -2 0 0 30 400 05 0 .8 0 .3 2 * 85 C 0 .5 0 @ 25’ C •t í a v i M a x . average o n-state cu rre n t @ 1 8 0 °

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

darlington tip

Abstract: tip 127 texas BD 147 tip 127 texas instruments TIP5530 tip darlington pnp TIP 122 tip 127 darlington tip 42 TIP NPN BD633
Contextual Info: Ptot@ Typ type NPN PNP TIP 35 B TIP 36 B 90 80 25 25 100 1,5 TIP 35 C TIP 36 C 90 100 25 25 100 1,5 TIP 41 TIP 42 65 40 6 15 75 3 TIP 41 A TIP 42 A 65 60 6 15 75 3 TIP 41 B TIP 42 B 65 80 6 15 75 3 TIP 41 C TIP 42 C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

2N2243

Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15

B0638

Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g

B0735

Abstract: darlington tip b0737 TIP 125 B0738 TIP5530 darlington tip 42 b073 BD737 BD 147
Contextual Info: PRELIMINARY BD733, BD735, BD737 NPN EPI BASE POWER TRAN SISTO RS 873 HIGH GAIN GERMANIUM R EPLA CEM EN T • Car and Portable Radio • Complementary Output Stages

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered