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    2N2192B Search Results

    2N2192B Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2192B Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N2192B Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2192B Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2192B Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan PDF
    2N2192B Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2192B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2192B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2192B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2192B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N2192B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2192B Unknown Vintage Transistor Datasheets Scan PDF
    2N2192B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2192B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2192B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2192B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2192B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2192B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2192B Unknown Cross Reference Datasheet Scan PDF
    2N2192B Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2192B Raytheon Selection Guide 1977 Scan PDF

    2N2192B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rca 2n2147

    Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


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    PDF BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 rca 2n2147 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200

    2N4945

    Abstract: BC211-6 TP5816 LOW-POWER SILICON NPN TL3569
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


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    PDF BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 2N4945 BC211-6 TP5816 LOW-POWER SILICON NPN TL3569

    2SC1766C

    Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133


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    PDF 2SC1766A 2SC1766B 2SC1766C 2SC1766D MM1941 MPS6512 MPS6513 TP5377 TP5376 HSE144 BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab

    2N1990

    Abstract: No abstract text available
    Text: na. 20 STERN AVE. SPRINQRELD, NEW JERSEY 07081 U.SA TYPE NO DESCRIPTION VCBO VCEO V M Small Signal Transistors VEBO teo« VCB (MA) M M IFE et «vc (mA) 00 Vce(SAT)«lc M (mA) •CEO "ICES -ICEV —ICEH *VCER MIN MIN MIN 2N1975 NPNAMPUSWnrCH 100 60 7.0 2N1983


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    PDF 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N19B8 2N2800 2N2S01 2N1990

    2SC1675L

    Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
    Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A


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    PDF

    BSV12

    Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
    Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


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    PDF 2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252

    2N2405

    Abstract: 2N2476 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT (mA) (V) (V) (mA) (MHz) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) (dB) NF *TYP


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    PDF 2N1975 2N1983 2N1984 2N2658 2N2726 2N2727 2N2800 2N2801 2N2405 2N2476 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989

    2n1983

    Abstract: 2N1990 2N1975 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) (V) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) (dB) NF *TYP *TYP *TYP


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    PDF 2N1975 2N1983 2N1984 2N2658 2N2726 2N2727 2N2800 2N2801 2N2237 2n1983 2N1990 2N1975 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017

    2N2243

    Abstract: 2n2405
    Text: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B


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    PDF 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N2243 2n2405

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max


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    PDF bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    2N2049

    Abstract: 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N1613B 2N720A 2N721
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) 10 10 10 10 10 Cob COMPLE­ max MENTARY TYPE (PF) (A) fT min (MHz) 5 1.5 1.2 1.5 1.5 0.15 0.15 0.05 0.15 0.15 50 50 50 70 60 15 45 15


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    PDF 2N720A 2N721 2N91I 2N956 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N2049 2N1613B

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118

    2n11

    Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
    Text: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10


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    PDF 2N910 2N911 2N912 2N956- 2N1052 2N1053 2N1054 2N1055 CBR30 0000S23 2n11 2N1116 2N1117 2N1420

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2n1574

    Abstract: 2n1983 2N2049 2N1117 TO-5 2n11 2N1572
    Text: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. *c VC E max mA V V — — — 300 10 10 . 10 150 20° 10


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    PDF 000021S 2n910 to-18 2n911 2n912 2n956- 2n1052 2n1053 2n1574 2n1983 2N2049 2N1117 TO-5 2n11 2N1572

    Untitled

    Abstract: No abstract text available
    Text: Small signal Transistors TO-39 Case Continued TYP E NO. D ESCRIPTION V CBO v CEO v EBO •C B O v CBO (V) (V) (V) *V CER Ü1A) e ie h FE <mA) (V) evCE V CE(SA T) ® *C (V) (V) ♦r (m A) Cob (MHz) *'CEO *on (n*) *otf NF (dB) *TYP (PF) TYP TYP (ns) *TYP


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    PDF 2N1975 2N1983 2N1984 2N2658 2N2726 2N2727 2N2800 2N2801

    2N2222n

    Abstract: 2n3053A complementary 2N2017 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2897 2N2193A
    Text: TYPE NO. P O LA R ITY Medium Power Amplifiers and Switches CASE H MAXIMUM RATINGS Pd mW •c V CEO (A) (V) 1000 800 1000 1000 1 0.5 1 11 FE V CE(SAT) max 'c VC E (V) (V) 'c Cob COM PLE­ max M ENTARY (MHz) (pF) T YPE fT mki min max ImAI 60 50 65 65 50 100


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    PDF 2N2017 2N2102 2N4036 2N2102A 2N2192 2N2192A 2N2192B 2N2193 2N2193A 2N2907 2N2222n 2n3053A complementary 2N2897

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    2N171

    Abstract: 2N1566
    Text: Medium Power Amplifiers and Switches TY PE NO. POLA­ R IT Y CA SE M A X IM U M R A T IN G S VcEO Pd Ic ^CER * mW (A ) (V) H FE ^CE(sat) Ic ^CE m ax Ic m in m ax (m A ) (V) (V) (A ) fT C 0b m in m ax (M H z) (M H z) CO M PLE­ M ENTARY TY PE PN3642 PN3643


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    PDF PN3642 PN3643 PN3644 PN3645 PN4355 PN4356 2N697 2N699 2N699A 2N699B 2N171 2N1566

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18


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    PDF 2N720A 2N721 2N91I 2N956 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A