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    2N2270 Search Results

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    2N2270 Price and Stock

    Central Semiconductor Corp 2N2270 PBFREE

    TRANS NPN 45V 1A TO39
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    DigiKey 2N2270 PBFREE Bulk 1,711 1
    • 1 $2.23
    • 10 $1.851
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    • 1000 $1.05767
    • 10000 $0.935
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    Avnet Americas 2N2270 PBFREE Box 1,000
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    • 1000 $1.08566
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    Mouser Electronics 2N2270 PBFREE 574
    • 1 $2.28
    • 10 $1.89
    • 100 $1.51
    • 1000 $1
    • 10000 $0.957
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    Microchip Technology Inc 2N2270

    TRANSISTOR POWER BJT
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    DigiKey 2N2270 Bulk 100
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    Avnet Americas 2N2270 Bulk 22 Weeks 100
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    Mouser Electronics 2N2270
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    Newark 2N2270 Bulk 100
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    Microchip Technology Inc 2N2270 882 1
    • 1 $34.78
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    Onlinecomponents.com 2N2270
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    NAC 2N2270 10
    • 1 $35.49
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    Master Electronics 2N2270
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    Central Semiconductor Corp 2N2270

    Bipolar Transistor NPN Amplifier/Switch 1A 60V 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N2270)
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    Avnet Americas 2N2270 Box 6 Weeks 500
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    Quest Components 2N2270 4
    • 1 $5.04
    • 10 $4.2
    • 100 $4.2
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    Central Semiconductor Corp 2N2270 TIN/LEAD

    Transistor GP BJT NPN 45V 1A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N2270 TIN/LEAD)
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    Avnet Americas 2N2270 TIN/LEAD Box 1,000
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    Mouser Electronics 2N2270 TIN/LEAD
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    New Jersey Semiconductor Products, Inc. 2N2270

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N2270 298,177 2
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    • 100 $1.5263
    • 1000 $1.3409
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    Find more 2N2270 price and stock on Findchips.com

    2N2270 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2270 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N2270 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 45V 1A TO-39 Original PDF
    2N2270 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2270 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2270 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2270 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2270 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N2270 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N2270 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N2270 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N2270 General Diode Transistor Selection Guide Scan PDF
    2N2270 General Electric Silicon N-P-N planar transistor. Scan PDF
    2N2270 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N2270 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2270 Micro Electronics Semiconductor Devices Scan PDF
    2N2270 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2270 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2270 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2270 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2270 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N2270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2270

    Abstract: transistor 2n2270
    Text: 2N2270 High-Speed Powwer Transistors Silicon NPN Planar Transistor . 1 of 2 Home Part Number: 2N2270 Online Store 2N2270 Diodes High- Speed Po w w er Trans is t o rs ( Silic o n NPN Planar Trans is t o r)


    Original     		PDF 2N2270 com/2n2270 2N2270 transistor 2n2270

    2N2270

    Abstract: transistor 2n2270
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω


    Original     		PDF 2N2270 C-120 2N2270Rev 040904E 2N2270 transistor 2n2270

    2N2270AL

    Abstract: No abstract text available
    Text: 2N2270AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2270AL O205AA) 20-Aug-02 2N2270AL

    transistor 2n2270

    Abstract: 2n2270 2N2270 equivalent
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω


    Original     		PDF ISO/TS16949 2N2270 C-120 2N2270Rev 040904E transistor 2n2270 2n2270 2N2270 equivalent

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N2270 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION


    Original     		PDF 2N2270 C-120 2N2270Rev210901

    2N2270

    Abstract: No abstract text available
    Text: 2N2270 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2270 is a NPN silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N2270 100mA, 100mA 150mA, 150mA 17-August

    Untitled

    Abstract: No abstract text available
    Text: 2N2270 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).90 @I(C) (A) (Test Condition)150m


    Original     		PDF 2N2270 Freq60M

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Ω Collector Emitter Voltage, RBE < 10Ω


    Original     		PDF 2N2270 C-120 2N2270Rev 040904E

    Untitled

    Abstract: No abstract text available
    Text: 2N2270S Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.200


    Original     		PDF 2N2270S Freq100M StyleTO-39 Code3-12

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: TY P E 2N2270 N -P -N SILIC ON TR A N S IS TO R B U L L E T IN N O . D L -S 7 3 1 1 9 4 7 , M A R C H 1 9 7 3 FOR M EDIUM -PO W ER, G E N E R A L PURPOSE A PPLICATIO N S •mechanical data absolute maximum ratings at 25°C case temperature unless otherwise noted


    OCR Scan     		PDF 2N2270

    RCA-2N2270

    Abstract: 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor
    Text: E SOLID 3875081 STATE G E Öl SO LID STATE » E | 3Ö750Ö1 0D170T7 01E D T - l f - i l 17097 High-Speed Power 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS


    OCR Scan     		PDF 0D170T7 2N2270 RCA-2N2270 92CS-III79RI 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor

    2N2270

    Abstract: No abstract text available
    Text: 2N2270 MAXIMUM RATINGS R ating Sym bol V alu e U n it C o lle c to r-E m itte r V o lta g e v CEO 45 Vdc C o lle c to r -E m itte r V o lta g e , RgE *= 10 O h m s V CER 60 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 V dc E m itte r-B a s e V o lta g e


    OCR Scan     		PDF 2N2270 O-205AD) 2N2270

    2n3072

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE(sat) VCE max (V) (V) (A) 2N2243A 2N2270 2N2297 2N2303 2N2309 N N N P N TO-39 TO-39 TO-39 TO-39 TO-39 800 1000 800 600 600 1 1 1 0.5


    OCR Scan     		PDF 2N2243A 2N2270 2N2297 2N2303 2N2309 2N2380 2N2380A 2N2405 2N2479 2N2800 2n3072

    2N2270

    Abstract: transistor 2n2270 RCA-2N2270 RCA Solid State Power Transistor D-07 2N2270 RCA
    Text: E SOLID STATE 3875081 öl G E SOLID STATE DE | 3 Ö 7 S D Ö 1 ODITOT? 0 1E 17097 D T - l f ~ High-Speed Power Transistors_ 2N2270 File Number 2 4 Silicon N-P-N Planar Transistor TERMINAL DESIGNATIONS General-Purpose Type for Small-Signal, Medium-Power Applications


    OCR Scan     		PDF 2N2270 RCA-2N2270 92CS-IU7IH2 92CS-III79RI GD171DQ 2N2270 transistor 2n2270 RCA Solid State Power Transistor D-07 2N2270 RCA

    2N3019A

    Abstract: 2N3501A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A

    2N2270

    Abstract: 4700 50v RCA-2N2270 2N2270 RCA transistor 2n2270 ln306 rca 2N2270
    Text: High-Speed Power Transistors V 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS General-Purpose Type for Small-Signal, Medium-Power Applications C CASE Features: • Minimum gain-bandwidth product = 700 MHz; useful in applications from dc to 20 MHz


    OCR Scan     		PDF 2N2270 2CS-27512 O-205AD RCA-2N2270 92CS-Ã LN3064 92CS-20255 4700 50v 2N2270 RCA transistor 2n2270 ln306 rca 2N2270

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


    OCR Scan     		PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    Untitled

    Abstract: No abstract text available
    Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max


    OCR Scan     		PDF bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		PDF BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88

    2N3645

    Abstract: 2N4355 2N3503 fairchild 2N3642 2N3644 T0105 PN3693 2N915 transistor 2N3504 2N3504
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item DEVI CE NO. Po larity NPN PNP @ <C h FE v CEO (hfe) (VCER) mA V Min/Max Min VCE(sat) V


    OCR Scan     		PDF 2N4403 BCY71 2N3502 2N3504 2N3644 T0-105 PN3644 PN3693 BFX39 2N43S4 2N3645 2N4355 2N3503 fairchild 2N3642 T0105 PN3693 2N915 transistor 2N3504

    bc140

    Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF BC160 BFY50 2N1613 2N1711 ZT211 BCY65E BCY77 2N2270 ZT210 bc140 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91