Untitled
Abstract: No abstract text available
Text: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM1500ESM33-TL000
DS6112-1
LN30640)
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Untitled
Abstract: No abstract text available
Text: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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Original
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DIM1500ESM33-TL000
DS6112-1
LN30640)
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LM38510
Abstract: db3c 209 1N3064 L-M-38510 TROL 404 types wvf 222 - E
Text: MIL-M-38510/423A 9 August 1983 S U P E R S ED'I N T MIL-M-38510/423 USAF 8 F e b r u a r y 1980 IQ U A L I F I C A T I O N I IREQU I R E M E N T S I I R E M O VE D I MILITARY SYSTEM SPECIFICATION M I C R O CI RC UI TS , DIGITAL, SCH OT TK Y T T L , C O N T R O L L E R AND BU S D R I V E R , M O N O L I T H I C S I L I C O N
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L-M-38510/423A
MIL-M-38510/423
LM38510
db3c 209
1N3064
L-M-38510
TROL 404
types wvf 222 - E
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2N2270
Abstract: 4700 50v RCA-2N2270 2N2270 RCA transistor 2n2270 ln306 rca 2N2270
Text: High-Speed Power Transistors V 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS General-Purpose Type for Small-Signal, Medium-Power Applications C CASE Features: • Minimum gain-bandwidth product = 700 MHz; useful in applications from dc to 20 MHz
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2N2270
2CS-27512
O-205AD
RCA-2N2270
92CS-Ã
LN3064
92CS-20255
4700 50v
2N2270 RCA
transistor 2n2270
ln306
rca 2N2270
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