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    2N3032 Search Results

    2N3032 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3032 Microsemi SCRs 0.5 Amp, Planar Scan PDF
    2N3032 Microsemi SCR 0.5 A, Planar Scan PDF
    2N3032 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3032 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N3032 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N3032 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3032 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3032 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N3032 Solid State Devices Silicon Controlled Rectifier Selection Guide Scan PDF
    2N3032 Unitrode SCRs 0.5 Amp, Planar Scan PDF
    2N3032-1 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N3032+JAN Defense Electronics Supply Center 100V V[drm] Max., 500mA I[T] Max. Silicon Controlled Rectifier Scan PDF
    2N3032JAN Unitrode International Semiconductor Data Book 1981 Scan PDF
    2N3032+JANTX Defense Electronics Supply Center 100V V[drm] Max., 500mA I[T] Max. Silicon Controlled Rectifier Scan PDF
    2N3032JANTX Unitrode International Semiconductor Data Book 1981 Scan PDF

    2N3032 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N3027-2N3032 0.5 AMP SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


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    PDF 2N3027-2N3032 MIL-PRF-19500, 2N3027 2N3030 2N3028 2N3031 2N3029 2N3032 500mA 250mA

    EC103A

    Abstract: To226AB MCR100-2 TAG 85 22 TECCOR EC103A SF1B12 226AB SN051 TO-226-AB BT149A
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 GB201 GB201A SN051 AA101 AA10S 2N3032 AA115 2N3029 MCR204 E0100AO 1;0102Aj\ E0102AB E0102AO P0102AA P0102AB 10102 MMBS50S2 X0102AA BT149A BT149A 2N66B1 2N1931 P0109AA P0109AB P0107AA


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    PDF GB201 GB201A SN051 AA101 AA10S 2N3032 AA115 2N3029 MCR204 E0100AO EC103A To226AB MCR100-2 TAG 85 22 TECCOR EC103A SF1B12 226AB TO-226-AB BT149A

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


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    PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    TRIAC zo 607 MA

    Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
    Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’


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    PDF DL137/D May-2000 r14525 TRIAC zo 607 MA ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760

    micronote 103

    Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
    Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to


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    pin diodes radiation detector

    Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
    Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to


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    2N2369 avalanche

    Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
    Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military


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    triac with snubber

    Abstract: RF transistor W2W TRIAC RCA Westinghouse SCR handbook BATTERY CHARGER SCR ZO 607 TRIAC 11Z13 TRIAC zo 607 MA AC 220v fan motor speed control triac bt136 220v dimmer light bt139
    Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’


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    PDF DL137/D May-2000 r14525 DL137/D triac with snubber RF transistor W2W TRIAC RCA Westinghouse SCR handbook BATTERY CHARGER SCR ZO 607 TRIAC 11Z13 TRIAC zo 607 MA AC 220v fan motor speed control triac bt136 220v dimmer light bt139

    JANTX 2N3028

    Abstract: 2N3028 2N3027 2N3029 JAN 2N3029 2N3030 2N3031 2N3032
    Text: JAN & JANTX 2N3027-2N3032 SCRs 0.5 Amp, Planar Ì1 -fi e*C<SIJÉANÛÛE F EA T U R E S • JA N and JA N T X Types Available • Fu lly Characterized for “Worst C ase " Design • Passivated Planar C onstruction for M axim um R e lia b ilit y a n d P a ra m e te r U n ifo rm it y


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    PDF 2N3027-2N3032 12/is 2N3027 JANTX 2N3028 2N3028 2N3029 JAN 2N3029 2N3030 2N3031 2N3032

    Untitled

    Abstract: No abstract text available
    Text: M I C R O S E M I C O R P / ÜJATERTOÜJN SQE D G 0 1 E 5 2 b R24 • U N I T SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar T ^ j r - n FEA TU R ES D E S C R IP T IO N • JAN and JANTX Types Available • Fully Characterized for “Worst Case” Design • Passivated Planar Construction for Maximum


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    PDF 2N3027-2N3032 12/is 2N3027

    MILS19500-419

    Abstract: 2N3032 2N3027 aade
    Text: I INCH-POUMD { M I L - S - 1 95 00 / 4 1 9 ER AMENONENT 2 29 J u n e i yÿü gUPPB g P B Tlig v-AMENDMENT 1 ~ ZI May 1969 MILITARY SPECIFICATION SEM IC ON DUC TO R DEVICE. THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3027 THROUGH 2N3032, AND 4 » n iv u w u n


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    PDF MIL-S-19500/419 2N3027 2N3032, O/413iER) MIL-STD-1276, Lot-1nspec11 5961-A989) MILS19500-419 2N3032 aade

    Untitled

    Abstract: No abstract text available
    Text: SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar Ì1 - fi e*C<SIJÉANÛÛE FEATU RES DESCRIPTION • JAN and JANTX Types Available • Fully Characterized for “Worst Case" Design • Passivated Planar Construction for Maximum The 2N3027 series of planar SCRs controlled switches are intended for use in


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    PDF 2N3027-2N3032 2N3027

    2n3028

    Abstract: 2N3028 JANTX
    Text: SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar FEA T U RE S • JA N and JA N T X Types Available • Fully Characterized for “Worst C ase” Design • Passivated Planar Construction for Maxim um R eliability and Parameter Uniform ity • Low On-State Voltage and Fast Sw itching


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    PDF 2N3027-2N3032 12/us 2N3027 2n3028 2N3028 JANTX

    2N3029

    Abstract: JANTX 2N3028 2N3028 2N3027 2N3030 2N3031 2N3032 UNITRODE 3027
    Text: JAN & JANTX 2N3027-2N3032 SCRs 0.5 Amp, Planar FEATURES D E S C R IP T IO N • JAN and JANTX Types Available • Fully Characterized for "W orst Case" Design • Passivated Planar Construction for Maximum Reliability and Parameter Uniformity • Low On-State Voltage and Fast Switching


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    PDF 2N3027-2N3032 12/is 2N3027 2N3029 JANTX 2N3028 2N3028 2N3030 2N3031 2N3032 UNITRODE 3027

    IN457A

    Abstract: IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3027 2N3028
    Text: MIL SPECS I C | 000D15S QDD3SE7 b | Ml L-S - 195G0/4&#39;!9 £l AMiiNDMclS i- i 21 May 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N3027 THROUGH 2N 3032, AND TX2N3027 THROUGH 2N3032 This Amendment forms o port of M ilitary


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    PDF 95GGA 2N3027 2N3032, TX2N3027 TX2N3032 L-S-19500/419 MIL-STD-1276, MIL-STD-1276) 5961-A230 IN457A IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3028

    TE 555-1

    Abstract: 419 on 80 GA201A 2n3031 2n2031
    Text: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028


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    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    CQ417

    Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686
    Text: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A


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    PDF 180mA 200mA 260mA 275mA 280mA 390mA 350mA 500mA 2N4212 2N2009 CQ417 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686

    2n2345

    Abstract: 2N2344 2N3555 2n6336 2N2346 2N3560 2N2009 2N2012 2N2325 2N2348
    Text: A SILICON CONTROLLED RECTIFIERS U O' 180mA TO-18 ro I o a 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 500mA 350mA TO-18 TO-5 TO-18 2N948 30 2N2683 2N2687 2N5719 2N4109 TO-5 2N2009 2N5720 2N949 2N950 2N5721 2N951 2N2684 2N2688


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    PDF 180mA 200mA 260mA 275mA 280mA 350mA 390mA 500mA 2N4212 2N2009 2n2345 2N2344 2N3555 2n6336 2N2346 2N3560 2N2012 2N2325 2N2348

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier