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    Walsin Technology Corporation 0402N330J500CT

    CAP CER 33PF 50V C0G/NP0 0402
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    Walsin Technology Corporation 0402N330J250CT

    CAP CER 33PF 25V C0G/NP0 0402
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    Walsin Technology Corporation 0402N330G500CT

    CAP CER 33PF 50V C0G/NP0 0402
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    Novacap MD0402N330F500YHT-EM

    CAP CER 33PF 50V C0G/NP0 0402
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    DigiKey MD0402N330F500YHT-EM Cut Tape 1,000 1
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    3M Interconnect 3S502-N330-B00-PN-500

    MINI STACK CONNECTOR WIREMOUNT S
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    DigiKey 3S502-N330-B00-PN-500 Box 499 1
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    2N330 Datasheets (220)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N330 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N330 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N330 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N330 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N330 Unknown GE Transistor Specifications Scan PDF
    2N330 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N330 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N330 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N330 Unknown Vintage Transistor Datasheets Scan PDF
    2N330 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3300 Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=35min / fT(Hz)=800M / Pwr(W)=0.8 Original PDF
    2N3300 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=35min / fT(Hz)=800M / Pwr(W)=0.8 Original PDF
    2N3300 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3300 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3300 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3300 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N3300 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3300 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N3300 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    2N3300 Micro Electronics Semiconductor Device Data Book Scan PDF
    ...

    2N330 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3300

    Abstract: No abstract text available
    Text: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original
    2N3300 O205AD) 10/10m 1-Aug-02 2N3300 PDF

    2N4872

    Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837


    Original
    ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 2N4872 10N60N 2N3304 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258 PDF

    2N3301

    Abstract: 2N330
    Text: 2N3301 2N3302 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM


    Original
    2N3301 2N3302 2N3302 2N3301-2N3302 2N330 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3308 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original
    2N3308 Freq300M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3307 Si PNP LP HF BJT 13.39 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N3307 Online Store 2N3307 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original
    2N3307 com/2n3307 2N3307 O-72var PDF

    2N3300

    Abstract: No abstract text available
    Text: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original
    2N3300 O205AD) 10/10m 17-Jul-02 2N3300 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original
    2N3300 O205AD) 10/10m 19-Jun-02 PDF

    BF460

    Abstract: BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 20 OKS22 TS1134 KN100 2S01211 BF460 BF461 BF462 2N3374 ~~~~j: 25 30 2N3924 2S01228M 2S01228M 2N3118 2N3119 2SC259O 2N5421 2N3309 ~~~~:A 35 • 40 2N3684 2N3684 2N5213 2N5213 2N5213 2N3869 C3·28 BLY34 ~t~~:


    Original
    2SC24 2SC1567 2SC1567A BLY11 2N3498 2N3499 MM2258 BF460 BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090 PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


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    2N3302 2N3326 2N3388 2N3418 2N3419 2N3501 2N3665 2N3666 2N3678 2N3700 PDF

    2N22A

    Abstract: 2N4271 2N3947 2N3326 2N3666
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


    OCR Scan
    2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666 PDF

    2N3307 MOTOROLA

    Abstract: 2N3307 2N3308 GE-17
    Text: M O T OR OL A SC X S T R S /R F la E ° I b3t?2S l1 000^351 fe, | 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 TO-206AF M A X IM U M RATINGS Symbol 2N3307 2N3308 Unit VCEO 35 25 Vdc Colfector*Emitt6r Voltage Vc es 40 30 Vdc Collector-Base Voltage VCBO 40 30


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    2N3307 2N3308 2N3308 O-206AF) 2N3307 MOTOROLA GE-17 PDF

    2n3300

    Abstract: 2N3302 2N2218 2N3300 MOTOROLA
    Text: MOTOROLA SC XSTR S/R F 15E D b3b7354 Q0âb350 4 | T 'X l-o i 2N3300 CASE 79-04, STYLE 1 TO-39 TO-205AD) 3 Collector M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage (Applicable 0 to 10 mAdc) VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc


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    b3b7354 2N3300 O-205AD) 2N3300 2N3302 O-206AA) 2N2218 2N3302 2N3300 MOTOROLA PDF

    2N1855

    Abstract: 0E-18 2N1025 2n936
    Text: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927


    OCR Scan
    2N327A 2N327B 2N328A 2N328B 2N329A 2N3298 2N330A 2N923 2N924 2N925 2N1855 0E-18 2N1025 2n936 PDF

    2N3304

    Abstract: 222Z 2N328A
    Text: ENTRAL SEMICONDUCTOR □□□□SSI S r bl D PIMP METAL CAN - SATURATED SWITCH Cont'd. Vcb VCE V eb hFE at •c VCE V V V min ma mA V 2N3250 2N3250A 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20 5 5 5 4 5 50 50 100 30 40 150 160 300 120 120 10 10


    OCR Scan
    222ZZ ZZZ22 CBR30 0000S23 O-105 O-106 2N3304 222Z 2N328A PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N3307 \ \ PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3307 is Designed for General Purpose High Frequency Low Noise Amplifier, Mixer and Oscillator Applications. MAXIMUM RATINGS 50 mA lc -35 V ce P diss 300 mW @ Tc = 25 °C P diss 200 mW @ TA = 25 °C


    OCR Scan
    2N3307 2N3307 PDF

    2N3293

    Abstract: 2N3294 2n4957 40244 2N5851 2n3287 2N335 2n3600 2N5852 2N2857
    Text: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876


    OCR Scan
    2N3292 2N3293 2N3294 2N918 2N3478 T0-72 2N2857 2N3839 2N3600 2N5851 2n4957 40244 2n3287 2N335 2N5852 PDF

    Untitled

    Abstract: No abstract text available
    Text: M axim um Ratings Type NPN Pd Am bient mW V cb Volts 2N3250 360 2N3250A VCE Electrical Characteristics @ 25°C V C E Sat @ l c / l B H re @ Ic Volts V eb Volts M in /M ax mA 50 40 5 50/150 360 60 60 5 2N3251 360 50 40 2N3251A 360 60 2N3299 800 2N3300 ft


    OCR Scan
    2N3250 2N3250A 2N3251 2N3251A 2N3299 2N3300 2N3301 2N3302 2N3326 2N3485 PDF

    Untitled

    Abstract: No abstract text available
    Text: 30E ]> • 7^2^237 0031171 5 '" P 3 S - 1 S r z 7 SCS-THOMSON ^7# 2N3301 2N3302 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESC RIPTIO N The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and


    OCR Scan
    2N3301 2N3302 2N3301 2N3302 i-10/js PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302


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    T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 PDF

    2N3019A

    Abstract: 2N3501A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A PDF

    2N328A

    Abstract: No abstract text available
    Text: ENTRAL bl SEMICONDUCTOR □□□□SSI D S r T -3 7 -a i PIMP M ETA L CAN - S A TU R A TED SWITCH Cont'd. TYPE Vc b VCE V eb hFE at •c VCE NO. V V V min ma mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20 5 5 5 4 5 50 50 100 30


    OCR Scan
    222ZZ ZZZ22 CBR12 CBR30 0000S23 O-105 O-106 2N328A PDF

    2N3307

    Abstract: No abstract text available
    Text: 2N3307 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3307 is Designed for General Purpose High Frequency Low Noise Amplifier, Mixer and Oscillator Applications. 5O mA PACKAGE STYLE TO- 72 o m Ie < MAXIMUM RATINGS -35 V Pd is s 3OO mW @ Te * 25 0C


    OCR Scan
    2N3307 PDF

    Untitled

    Abstract: No abstract text available
    Text: L.1 ENTRAL SEMICONDUCTOR D I ITflTibB □□□□SSI S PIMP METAL CAN - SATURATED SWITCH Cont'd. Vcb VCE V eb hFE at •c VCE >C fT C0b *on to ff V V V min ma mA V V mA MHz pF nS nS mA V 2N3250 2N3250A ' 2N3251A 2N3304 2N3545 50 60 60 6 20 40 60 60 6 20


    OCR Scan
    2N3250 2N3250A 2N3251A 2N3304 2N3545 2N3576 2N4034 2N4035 2N4207 2N4208 PDF

    2N3294

    Abstract: 2N335 40240 2N337 2n3600 2N2857 2N3292 2N3293 2N3478 2N3839
    Text: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876


    OCR Scan
    2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N335 40240 2N337 PDF