Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N3415 TRANSISTOR Search Results

    2N3415 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N3415 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3415 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3415 Availability Online Store


    Original     		PDF 2N3415 2N3415 STV3208 LM3909N LM3909

    Untitled

    Abstract: No abstract text available
    Text: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643


    Original     		PDF BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Transistors Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222


    Original     		PDF BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924

    2n3414

    Abstract: 2N3416
    Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general


    Original     		PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, 2n3414 2N3416

    2N3415

    Abstract: transistor 2n3415 2N3414 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414
    Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types are NPN silicon transistors, manufactured by the epitaxial planar process, designed for general


    Original     		PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, transistor 2n3415 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 NPN Silicon Epitaxial Planar Transistor to92 3414

    transistor 2n3415

    Abstract: 2N3415 CBVK741B019 F63TNR PN100A PN2222N
    Text: 2N3415 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N3415 PN100A transistor 2n3415 2N3415 CBVK741B019 F63TNR PN2222N

    transistor 2203

    Abstract: FJL6920 2N4126 bc548 transistor 2N5086 2N3390 PSpice PN24 transistor 2N5830 KSC5027F analog FJN13003 tip142
    Text: Discrete Temperature range Software version Revision date 2N3390 TO-92-3 Electrical 25°C N/A N/A 2N3391A TO-92-3 Electrical 25°C N/A N/A 2N3392 TO-92-3 Electrical 25°C N/A N/A 2N3393 TO-92-3 Electrical 25°C N/A N/A 2N3415 TO-92-3 Electrical 25°C N/A N/A


    Original     		PDF 2N3390 2N3391A 2N3392 2N3393 2N3415 2N3416 2N3417 2N3702 2N3703 2N3859A transistor 2203 FJL6920 2N4126 bc548 transistor 2N5086 2N3390 PSpice PN24 transistor 2N5830 KSC5027F analog FJN13003 tip142

    2N3415

    Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
    Text: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors


    OCR Scan     		PDF 2N3414 MPS3414 2N3415 MPS3415 2N3416 MP53416 2N3417 MPS3417 2N3414, MPS3414 MPS3415 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor

    92C3-427S0

    Abstract: 42766 2N3414 GE 2N3414 2n3417 output admittance hoe 2N3416 GES3414 GES3416 X10-3 2n3414-17
    Text: G E SO LID S T A T E ~ 01 3 875 081 G E S O L I D S T A T E DE§3fl750ñl □□IVTIS T 01E D 17915 Signal Transistors 2N3414-17, GES3414-17 T a ? - / ? Silicon IVansistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for


    OCR Scan     		PDF 2N3414-17, GES3414-17 2N3414-17 GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 GES3414 GES3416 92C3-427S0 42766 2N3414 GE 2n3417 output admittance hoe X10-3

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007

    2N3402

    Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3402 2n3404 2N3405 2N3403 2N3638 N3404

    2n3391a

    Abstract: No abstract text available
    Text: NPN Transistors bSDllBD uctor Discrete POWER & Signal Technologies " NPN General Purpose Amplifiers and Switches OOHÜMbl 2fil I to Device No. Case Style 2N3390 VCBO V CEO ^EBO V Min (V) Min (V) Min TO-92 (94) 25 25 2N3391A TO-92 (94) 25 2N3392 TO-92 (94)


    OCR Scan     		PDF 2N3390 2N3391A 2N3392 2N3393 2N3415 2N3416 2N3417 2N3704 2N5172 IVPS8098

    Untitled

    Abstract: No abstract text available
    Text: This NPN Transistors Material Ln a feH fcH UJ a Copyrighted tr a Discrete POWER & Signal Technologies National S e m i c o n d u c t o r f a -c o jr " i NPN General Purpose Amplifiers and Switches VCB0 VCEO ^EBO ^BE SAT 'c (V) @ (V) & Max Min Max (mA) VCE(SAT)


    OCR Scan     		PDF 0040Mbl

    Untitled

    Abstract: No abstract text available
    Text: NPN TRANSISTORS T O -9 2 /T O -2 2 6 A A ‘2N ’ and ‘T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *cao V C E fu t », Ic Device Max. Type mA) v V (8 R )C 6 0 V * (BR)EBO Max. (V) (V) (V) (nA) @ v CB (V) hFE hfE @ lc Min. Max. (m A)


    OCR Scan     		PDF TP918 TP2221 TP2221A TP2222 TP2222A 2N3414 2N3415 2N3416 2N3417 2N3904

    2N3417 equivalent

    Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002

    2N2712

    Abstract: 2N3606 2N3397 2N3564
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings V CEO (V) Min (V) Min 18 13 (V) Min 5 PD (W) (A) §Tfc25“c (mAI Max 0.1 0.5 0.625 *CBO va i *CES (V) (mA) Max 18 hrE '“CF @ (V L @ Min Max 75 225 lc X (mA) 2 ^CE V CE(SAT) (VI (V) Max V BE(SAn


    OCR Scan     		PDF O-92-1 2N2712 2N3606 2N3397 2N3564

    2N2924

    Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3856 2N3404 2N3856A 2N3405 n3860

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC blE P • D50M33A D00b3fl3 m M W A L G R NPN TRANSISTORS TO-92/TO-226AA W and T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at T. = 25 C V CE ut D C Current Gain 'c B O •c Max. v (BR)CBO V (BR1CEO V (BR)EBO Max. Device Type (mA) (V)


    OCR Scan     		PDF D50M33A D00b3fl3 O-92/TO-226AA TP918 TP2221 TP2221A TP2222 TP2222A

    2N4401 EBC

    Abstract: JEDEC 2N3904 TP2222A
    Text: NPN TRANSISTORS TO -92/TO -226AA >3 ‘2N’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO V CE sat 'c V (BR)CBO V (BR)CEO V (BR)EBO Max. Device Max. Type (mA) (V) (V) (V) (nA) @ V cb (V) hFE hFE @ l c @ V CE Max.


    OCR Scan     		PDF -92/TO -226AA TP918 TP2221 TP2221A TP2222 TP2222A 2N3414 2N3415 2N3416 2N4401 EBC JEDEC 2N3904

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS 8514019 INC SPRAGUE. T3 » • G50433Ö G003SÖS SEM ICO ND S/ ICS 93D G ■ AL6R 03 585 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Max. ^ BRICBO V r CEO V(BR)EBO Max. (a ^CB »W hFE Oi ic


    OCR Scan     		PDF G50433Ã G003SÃ TP918 TP930 TP2218 TP2218A TP2219 TP2219A TP2221 TP2221A

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX


    OCR Scan     		PDF 2N2712

    2N3405

    Abstract: transistors equivalent AP 3706 P mps3702 MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402
    Text: 2N3702 trough 2N 3706 MPS 3702 through MPS 3706 I PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN


    OCR Scan     		PDF 2N3702 O-92B. MPS3702 T0-92A. T0-92B T0-92A 2N/MPS3702 2N/MPS3703 360mW 2N3405 transistors equivalent AP 3706 P MPS3704 equivalent T0-92B transistors mps3704 2N3404 2n3402