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    Teledyne Defense Electronics 2N3436

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    2N3436 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3436 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3436 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3436 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3436 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3436 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3436 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3436 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N3436 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3436 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3436 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N3436 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N3436 Siliconix FET Design Catalogue 1979 Scan PDF
    2N3436 Solitron Devices Low Power Field Effect Transistor, Case Style = TO18, Geometry = FN3.6... Scan PDF
    2N3436-8 Siliconix FET Design Catalogue 1979 Scan PDF

    2N3436 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3436 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A)15m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200# I(GSS) Max. (A)500p @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)15m


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    2N3436 PDF

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


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    E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712 PDF

    2SK117BL

    Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL UC240 2SK523M 2SK105 TO92 2SK117-BL(F)
    Text: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 91s VGS(OH) IGSS (V) (A) Min (S) Max Max (V) Max (A) 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m


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    2N3069 2N3069A NDF9406 NDF9407 NDF9408 NDF9409 NDF9410 UC240 2SK117BL nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL 2SK523M 2SK105 TO92 2SK117-BL(F) PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    NF5458

    Abstract: 2N4303 2N3369 2N5363 NF523 2n3367 2N5163 nf5457
    Text: N-Channel FETs 9 neral purpose amps Type No. Case Style BVoss "BVOOO IVI M,n lass InAI Max VII Illmholl lOSS ImAI Min Max Min Max VploHI IVI Max C'u IpFI Max Cru IpFI Max NF IdBI I"en In nV.,fHl1 Max ProcIII No. 2N3069 TO•18 '50 1 2 10 1000 2500 10 15 4 52


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    2N3069 2N3070 2N3071 2N3365 2N3366 2N3367 2N3368 2N3369 2N3370 2N3436 NF5458 2N4303 2N5363 NF523 2N5163 nf5457 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 PDF

    2N3406

    Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391


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    HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A 2N3406 optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631 PDF

    2N3437

    Abstract: 2N3436 2N3438 2N34
    Text: 2N 3438 Siliconix designed f o r . . . Performance Curves NP See Section 5 • Small-Signal Amplifiers ■ Switches B EN EFITS • Operates from High Supply Voltages B VGSS > 50 V 2N3436 2N3437 s n-channel JFETs TO-18 See Section 7 ‘ ABSOLUTE M A X IM U M R A TIN G S 25°C


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    2N3436 2N3437 2N3438 2N3437 2N3436 2N3438 2N34 PDF

    JFET 2N3436

    Abstract: 2N3437 2N3436 ipev 2N3436-8 2N3438 2N3368-70 2N3458-60 2N3458 2N4338-41
    Text: 2N 3438 S ilic o n ix designed f o r . . . Perform ance Curves NP See Section 5 • Small-Signal Amplifiers ■ Switches B EN EFITS • Operates from High Supply Voltages B VGSS > 50 V 2N3436 2N3437 s n-channel JFETs T O -1 8 See S ection 7 ‘ ABSOLUTE M A X IM U M R A TIN G S 25°C


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    2N3436 2N3437 2N3438 JFET 2N3436 2N3437 2N3436 ipev 2N3436-8 2N3438 2N3368-70 2N3458-60 2N3458 2N4338-41 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    MPF111

    Abstract: 2N5459 MOTOROLA 2N3436 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola
    Text: ¥4 MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA * SC D E | b B b 7 a S S □ □ 3fl03b <D I O D E S / O P T O 34C :> 1 38036 D '7^-2'J-tsr' FIELD-EFFECT TRANSISTORS DICE continued) die n o . 2C4220 LINE SOURCE — DFM131 This die provides performance equal to or better than that of


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    3fl03b 2C4220 DFM131 2N3436 2N3437 2N343B 2N3821 2N3822 2N4220 2N4221 MPF111 2N5459 MOTOROLA 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


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    UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92 PDF

    siliconix - j201

    Abstract: J201 equivalent 2N4338-41 2N3368-70 siliconix j201 2N3368 J202 equivalent 2N3458-60 2N4338 2N5545-47
    Text: S S ilic o n ix designed fo r . Performance Curves NP See Section 5 • General Purpose Am plifiers B E N E F IT S • High Input Impedance I q = 35 p A Typical • G ood for Low Power Supply Opera­ tion V G S o f f < 1 -5 V (J201) J201 J202 J203 J201-18 J202-18 J203-18


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    2N3070

    Abstract: 2N3066 2N3967 2N3437 2N3455 2N3822 JAN 2N3436 2N3089 2N3365
    Text: ATAH LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Type Number Case Style (TO— 1 Geometr y •BVDgo oi BVgss Min (V Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) _ _ — — — — 9.5 4.5 2.2 9.5 4.5 1.0


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    2N3066 2N3067 2N3068 2N3069 2N3070 2N3071 2N3085 2N3087 2N3089 2N3089A 2N3967 2N3437 2N3455 2N3822 JAN 2N3436 2N3365 PDF

    2N5653-54

    Abstract: 2N3368 2N4338-41
    Text: PN4302 PN4303 P N 4 30 4 PN4302-18 PN4303-18 PN4304-18 H n-channel JFETs designed fo r . S ilic o n ix Perform ance Curves N P See Section 5 • General Purpose Amplifiers BENEFITS • Low Cost • High Input Impedance I q = 35 pA Typically • Low Noise


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    2N4342

    Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
    Text: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883


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    PNPTO-66 000D137 J31QDE TRdf\J515T0R 30a/a) 2N3740 2N3766 2N3740A 2N3767 2N3741 2N4342 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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