BF689
Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200
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BF200
O-206AF/TO-72:
BF183
BF206
BF208
BF689
2N5651
BF272
2N5652
BF251
BFY82
BFY70
BF316
BF479
BFX36
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Untitled
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
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2N3440A
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
2N3440A
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2N3439A
Abstract: 2N1890 2N3418A 2N3419A 1016npn 2N1717A npn 505 142 transistor
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 V ceo PACKAGE NPN TO-39 /¡ I NPN TO-5 Tjr i$f Ic DEVICE TYPE sus VOLTS (m ax ) 1*FE@ V CE (m in /m ax AMPS @ A/V) 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A VcE(s»t) @ (V @ A/A)
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OCR Scan
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PDF
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
2N3439A
2N3418A
2N3419A
1016npn
npn 505
142 transistor
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