2N5066

Abstract: TELEDYNE CRYSTALONICS 2N3677 veam
Contextual Info: U L T R A LOWrEC sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS G E O M E T R Y 292, PG. 57 (2N3677) G E O M E T R Y 414, PG. 57 (2N5066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) rEc ^sat* 4 Ohms TYPICAL

Contextual Info: U nc, 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 301 376-2922 (212)227-6005 FAX: (201) 376-8960 ULTRA LOWr.c (sat) SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS COMPLEMENTARY TYPES 2N3677 (PNP) 2N5068INPN) rgc ''»<> 4 Ohms TYPICAL

Contextual Info: 2N3678 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

Contextual Info: DIGITRON SEMICONDUCTORS 2N3668-2N3670, 2N4103 12.5A SILICON CONTROLLED RECTIFIER MAXIMUM RATINGS Rating Symbol 2N3668 2N3669 2N3670 2N4103 Units Non-repetitive peak reverse voltage VRM 150 330 660 700 V Peak repetitive reverse voltage VRRM 100 200 400 600

2N3742

Abstract: bc140 Bc300 BC300-5 2N3678 2N4237 2N4926 2N5320 2N5321 2N5681
Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. 2N3678 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^cao ^CEO ^EBO (V) (V) (V) Pd (W) Min Min Min @Tc=25°c 75 55 6 0.8 'c 'cm (A) (A) 'c 8 0 W ^CB 'ces ^CE e (V) (ma)

2N3670

Abstract: scr 2n3668 scr silicon controlled rectifiers 2N3668-2N3670 scr 2N3669 2N3669 2N4103 2N3688 scr RCA 2N3670 ta2621
Contextual Info: fi E SOLI» STATE "Üb 3 8 7 5 0 8 1 G E S O L ID S T A T E Silicon Controlled Rectifiers- dF 01E | 3 fl7 5 []fll D 01 7 k f l 4 17684 2N3668-2N3670, 2N4103 File Num ber 12.5-A Silicon Controlled Rectifiers 116 TERMINAL DESIGNATIONS For Low-Cost Power-Control and Power-Switching

Contextual Info: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)

2N367

Contextual Info: 2N3675 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3675 Availability Online Store

2N3669

Abstract: scr 2n3668 2N3668 2N3670 2n4103 2n3668 datasheet
Contextual Info: Datasheet 2N3668 2N3669 2N3670 2 N 4 1 03 SILICON CONTR O L L ED REC TI FI E R 16 AMPS 220 THRU 800 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-3 CASE

Contextual Info: ULTRA LOWree sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS GEOMETRY 2*2, (2N3677) GEOMETRY 485, (2NS066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) iec ,” tl 4 Ohms TYPICAL LOW G * LOW LEAKAGE HIGH BVebo

2n4319

Abstract: 2N4195 2N3940 2N3990 2n4369 2n4158 IR122D3 2n3986 rca TYN40BG 2N3754
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755

2N3677

Abstract: 2N5066 CDA11
Contextual Info: D /A SWITCHiES These circuits are designed specifically fo r D /A conversion, where low and stable Ron is of primary concern. Most o f these circuits use our own epitaxial junction bipolar transistors such as the 2N3677 and 2N5066. In addition to low Ron , most have an offset voltage of under 1 m illivolt. A ll of our circuits w ill

scr 2n3668

Abstract: scr 2N3669 2N3688 scr RCA 2N3670 2N4103 2N3669 RCA 2N3669 2N3668 2N3668-2N3670 2N3670
Contextual Info: 2N3668-2N3670, 2N4103 File Num ber 116 TERMINAL DESIGNATIONS 12.5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications Features: • ■ ■ ■ ■ Low switching losses High dl/dt and dv/dt capabilities Low leakage currents, both forward and reverse

Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^CBO ^C E O ^EBO PD Min (V) Min (V) Min (W) 0Tc=25°c 75 55 6 0.8 m 2N3678 'c (A) 0.8 *CM (A) ^CBO (PA) Max 0.01 VC8 *CES e (V)

Contextual Info: 2N3677 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N4319

Abstract: ST SEMICON INC aeg diode Sid 20 l 2N4205 2N4193 2N4166 2N4177 2N3759 TAG 600 2N4180
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755

SDT423

Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
Contextual Info: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664

Contextual Info: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)

Contextual Info: Microsemi NPN Transistors Part Number NPN JANTX2N5339 JANTXV2N5339 2N5148 2N5150 2N4863 2N2657 2N4895 2N4896 2N2658 2N4897 2N3619 2N3E20 2N3627 2N3928 2N3623 2N3628 2N5541 2N5327 i 2N3675 : 2N3676 2N5237 2N5237S JAN2N5237 JAN2N5237S JANS2N5237 JANS2N5237S

2N5066

Contextual Info: aN sC RYSTALO N IC SsssO W ebsite: W W W .Crystalonics.com Phone: 631:981-6140 Fax:(631-585-4858) * S e e price list for o rd e rin g inform ation U L T R A LOW rcc (sat) P N P / N P N S W IT C H IN G T R A N S I S T O R S 2N3677 2N3677UB 2N5066 2N5066UB

2N3676

Contextual Info: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)

2N5066

Abstract: T37Z 2N3677
Contextual Info: TELEDYNE COMPONENTS 5ÖE D fiW b G S O GD bS äT T ULTRA LOWree sat 2N 3677 SILICON EPITA XIA L JUNCTION PNP/NPN SWITCHING TRANSISTORS 2N5066 GEOMETRY 292, (2N3677) GEOMETRY 485, (2N5066) T - 3 7 - 2 Ì jr-sr-Li • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)

2N5066

Abstract: 2N3677/2N5066
Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 ULTRA LOWfEc sat SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS USA • • • • • TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3677 2N5066 COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)

2N3678

Contextual Info: Datasheet Central Sem iconductor Corp. 2N3678 NPN S ILIC O N TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T 0 - 3 9 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3678 is a Silicon NPN Epitaxial Planar Transistor designed for