2N3810

Contextual Info: 2N3810L Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810LJ

silicon pnp transistor

Abstract: TRANSISTOR DATA
Contextual Info: 2N3810L Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810LJ • JANTX level (2N3810LJX)

2N3810

Abstract: 2N3810 JANS
Contextual Info: Data Sheet No. 2N3810 Generic Part Number: 2N3810 Type 2N3810 Geometry 0220 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/336 Features: • Two electrically isolated, matched PNP transistors as one dual unit. • Housed in TO-78 case. • Also available in chip form using

2N3810

Abstract: 2N3810XDCSM
Contextual Info: 2N3810XDCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

Contextual Info: 2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810J • JANTX level (2N3810JX)

2N3810

Abstract: 2N3811 2n3810 datasheet 2N3811U 2N3810L 2N3810U 2N3811L
Contextual Info: TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810 • Matched Dual Transistor. • Hermetic Metal TO78 Package. • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810 • Matched Dual Transistor. • Hermetic Metal TO78 Package. • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

ESCC 5207 005

Abstract: 2N3810HR 2N3810HRG
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor

2N3807

Abstract: 2N3806 2N3808 2N3806A 2N3811 JANTX K/2N3806
Contextual Info: 2N3806,A thru 2N3809,A 2N3810*,A 2N3811*,A *also available as JAN, JANTX, JANTXV PNP SILICON DUAL AMPLIFIER TRANSISTOR RATINGS Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous SYMBOL ^CEO ^CBO ^EBO Ic

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e% » itittnnnnn hhhhhhk-. .rfHHHHHHHHMh. m 1 1 I r o f I ^88888 % # ><>niftBHhr 1 l D a ta S h e e t No. 2 N 3 8 1 1 $ id L SEMICONDUCTORS Type 2N3811 G eneric Part Num ber: 2N3810 G eom etry 0220 Polarity PNP Qual Level: J A N -J A N S

transistor X2N

Abstract: 3811A 2N381
Contextual Info: calocft Monolithic DualMatched PNP General Purpose Amplifier T Z l-Z l \J 2N3810A/2N3811A 4flE D CO RPO RATIO N • 1Ö443E2 OODGSSfl 5 m C G C CALOGIC CORP 2N3810A/2N3811A ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Em itter-Base Voltage (Note 1 ) .-5V

ESCC 5207-005

Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■

2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Contextual Info: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

Contextual Info: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N3810

Contextual Info: 2N3810 Chip: 5.0V; 50mA; Geometry 0220; Polarity PNP 13.98 Transisto. 1 of 2 Home Part Number: 2N3810 Online Store 2N3810 Diodes C hip: 5 .0 V; 5 0 m A; G eo m etry 0 2 2 0 ; Po larity PNP Transistors

Contextual Info: TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2n381 transistor

Abstract: 2n3s11 2N3810 2N381 2N3810A 2N3811 2N3811A X2N3810 X2N3811
Contextual Info: CALOGIC CORP 4ôE D • 1Ô443B2 OODGgSfl 5 ■ CGC Monolithic Dual Matched PNP I General Purpose Amplifier CORPORATION * as T Z t-Z I § > 2N3810A/2N3811A A B SO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Em itter-Base Voltage (Note 1 ) .-5V

2N3896

Abstract: 2N3899 2N3810 2N6174 MOTOROLA 2n3810 2N3870 2N3873 2N61 2N6171 thyristor circuits
Contextual Info: h, 2N3810thru2N3873~~ 2N3896thru2N3899 m 2N6171thru2N6174 ,. /x , volts & ‘@ ,., \\\\\ I Peak Non-Repetitive S.rg~#~@nt - I T<M I I 350 I Amo -,Icnfl ‘~perating Junction Temperature TJ -40 to +100 Oc Tstg -40 to +150 Oc flan~ ‘Storage z: Temperature

2N3811

Abstract: 2N3810
Contextual Info: TECHNICAL DATA 2N3810, 2N3810L JAN, JTX, JTXV 2N3810U JAN, JTX, JTXV 2N3811, 2N3811L JAN, JTX, JTXV 2N3811U JAN, JTX, JTXV MIL-PRF QML DEVICES Processed per MIL-PRF-19500/336 PNP SILICON DUAL TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: 2N3810+JANTX Transistors PNP Monolithic Transistor Pair Military/High-RelY Number of Devices2 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)0.6 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)10u

Contextual Info: 2N3810+JANS Transistors PNP Monolithic Transistor Pair Military/High-RelY Number of Devices2 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)0.6 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)10u

Contextual Info: 2N3810+JANTXV Transistors PNP Monolithic Transistor Pair Military/High-RelY Number of Devices2 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)0.6 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)10u

2N3810DCSM

Contextual Info: INI = ^ = INI SEME 2N3810DCSM LAB DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 2.29 ± 0.20 (0.09 ± 0.008) r— 1r j f« • HERMETIC CERAMIC SURFACE