2N3819 APPLICATION Search Results

2N3819 APPLICATION Result Highlights (5)

Part	Manufacturer	Description
C8231A	Rochester Electronics LLC	Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24
AM79865JC	Rochester Electronics LLC	Telecom Circuit,
AM79866AJC-G	Rochester Electronics LLC	SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20
MD8087/R	Rochester Electronics LLC	Math Coprocessor, CMOS
AM7992BPC	Rochester Electronics LLC	Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24

2N3819 APPLICATION Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor 2N3819 Abstract: 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor	Original	2N3819 450MHz, transistor 2N3819 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier	PDF
Untitled Abstract: No abstract text available Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor	Original	2N3819 450MHz,	PDF
Untitled Abstract: No abstract text available Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source NPN Epitaxial Silicon Transistor	Original	2N3819 450MHz,	PDF
BC237 Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53	Original	1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1	PDF
2N3819 Abstract: No abstract text available Text: 2N3819 w w w. c e n t r a l s e m i . c o m SILICON N-CHANNEL JFET The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C Drain-Gate Voltage	Original	2N3819 2N3819 100MHz	PDF
2N3819 equivalent Abstract: 2N3819 2N4416 Siliconix Text: 2N3819 Siliconix NĆChannel JFETs Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v -8 -25 2 2 Features Benefits Applications D Excellent HighĆFrequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion	Original	2N3819 2N3819 P-37407--Rev. 2N3819 equivalent 2N4416 Siliconix	PDF
2N3819 equivalent Abstract: 2N3819 Jfet 70238 equivalent for 2N3819 2n4416 jfet Siliconix JFET transistor 2N3819 high transconductance JFET TO72 package n-channel jfet 2N3819 application Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion	Original	2N3819 2N3819 04028--Rev. 04-Jun-01 2N3819 equivalent Jfet 70238 equivalent for 2N3819 2n4416 jfet Siliconix JFET transistor 2N3819 high transconductance JFET TO72 package n-channel jfet 2N3819 application	PDF
Untitled Abstract: No abstract text available Text: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3819 N-Channel RF Amplifier w • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low	Original	2N3819 450MHz, 86MAX	PDF
2N3819 equivalent Abstract: TEMIC 2N3819 transistor 2N3819 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix Text: 2N3819 Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS MIN (V) gfs MIN (MS) IDSS MIN (MA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion	Original	2N3819 2N3819 S-52424--Rev. 14-Apr-97 2N3819 equivalent TEMIC 2N3819 transistor 2N3819 2n4416 jfet Siliconix JFET Siliconix N-Channel JFET equivalent for 2N3819 2N4416 Siliconix Siliconix	PDF
2N3819 equivalent Abstract: transistor 2N3819 2N3819 Text: 2N3819 N-Channel JFET Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 Features Benefits Applications D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation	Original	2N3819 2N3819 S-52424--Rev. 14-Apr-97 2N3819 equivalent transistor 2N3819	PDF
2n3819 Abstract: 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819 Text: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10	Original	2N3819 r14525 2N3819/D 2n3819 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819	PDF
2N3819 equivalent Abstract: equivalent for 2N3819 2n3819 Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion	Original	2N3819 2N3819 08-Apr-05 2N3819 equivalent equivalent for 2N3819	PDF
2N3819 Abstract: 2N3819 Application Note N CHANNEL JFET 2N3819 Text: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10 mAdc Total Device Dissipation	Original	2N3819 r14525 2N3819/D 2N3819 2N3819 Application Note N CHANNEL JFET 2N3819	PDF
2N3819 equivalent Abstract: 2N3819 Application Note 2N3819 application 2N3819 Siliconix JFET 2n3819 datasheet Siliconix N-Channel JFET transistor 2N3819 Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion	Original	2N3819 2N3819 18-Jul-08 2N3819 equivalent 2N3819 Application Note 2N3819 application Siliconix JFET 2n3819 datasheet Siliconix N-Channel JFET transistor 2N3819	PDF

306-803 Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636 Text: Issued November 1983 J2983 Electronic attenuator Stocknumber 306-803 A silicon monolithic gain controlled A.C. amplifier programmed by an external D.C voltage or resistor. Applications include remote volume controls, speech compressors and expandor circuits. The device is	Original	J2983 100mV 2N3819 306-803 2N3819 application 741 opamp 2N3819 Application Note transistor 2N3819 opamp 741 RS 305-636	PDF
306-803 Abstract: 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor Text: Issued November 1983 002-983 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is	Original	20Vdc 100mV 306-803 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor	PDF
306-803 Abstract: 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741 Text: Issued March 1997 232-2245 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is	Original	20Vdc 100mV 306-803 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741	PDF
2N3819 equivalent Abstract: 2n3819 equivalent for 2N3819 jedec package TO-226AA Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY Vgs<o«> V < V{brjgss Min (V) g1#Min (mS) -2 5 2 lo s s Min (mA) 2 FEATURES BENEFITS APPLICATIONS • Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz • Very Low Noise: 3 dB @ 400 MHz • Very Low Distortion	OCR Scan	2N3819 2N3819 04-Jun-01 2N3819 equivalent equivalent for 2N3819 jedec package TO-226AA	PDF
2N3819 equivalent Abstract: 2N3819 equivalent for 2N3819 2n3819 equivalent ic J-FET 2N3819 Text: Tem ic Silicon!» _ 2N3819 N-Channel JFETs Product Summary V BR GSS M in (V) < -8 -2 5 l o s s M in (mA) .J:, gfs M in (m S) 2 2 Features Benefits Applications • • W ideband H igh G ain • H ig h -F req u en cy A m plifier/M ixer	OCR Scan	2N3819 2N3819 P-37407--Rev. 2N3819 equivalent equivalent for 2N3819 2n3819 equivalent ic J-FET 2N3819	PDF
TEMIC 2N3819 Abstract: 2N3819 equivalent 2n3819 equivalent ic 2n3819 Text: Temic 2N3819 S e m i c o n d u c t o r s N-Channel JFET Product Summary V cS off ( V ) V (B R )G S S M i n (V ) < -8 gfs Min (mS) IDSS Min(mA) 2 -25 2 Features Benefits Applications • Excellent High-Frequency Gain: Gps It dB @ 400 MHz • Very Low Noise: 3 dB @ 400 M Hz	OCR Scan	2N3819 2N3819 S-52424-- 14-Apr-97 TEMIC 2N3819 2N3819 equivalent 2n3819 equivalent ic	PDF
5T3824 Abstract: ME1600 5T3821 2N3819 Texas Instruments Text: TYPE 2N3819 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 8 0 4 7 , A U G U S T 1 9 6 5 - R E V IS E D M A Y 1968 S IL E C T t F IE L D -E F F E C T T R A N S IS T O R * • For Industrial and Consumer Small-Signal Applications	OCR Scan	2N3819 5T3821 5T3824 ME1600 2N3819 Texas Instruments	PDF
2N4303 Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161 Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES	OCR Scan	DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2n3866 noise 2N5566 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161	PDF
T018 Abstract: t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier Text: diode TR ANS ISTOR CO INC A4 DE I 5 5 4 5 3 5 5 0000144 T \ ^ D1QDE TRdf\l515TQR CQ.,lf\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5863 _ SILICON FIELD EFFECT TRANSISTORS- •N— CHANNEL DEVICES	OCR Scan	2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N3686 T018 t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier	PDF
2N4039 Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221 Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES	OCR Scan	DQD0144 2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4221	PDF

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2N3819 APPLICATION Search Results

2N3819 APPLICATION Result Highlights (5)

2N3819 APPLICATION Datasheets Context Search

transistor 2N3819

Untitled

Untitled

BC237

2N3819

2N3819 equivalent

2N3819 equivalent

Untitled

2N3819 equivalent

2N3819 equivalent

2n3819

2N3819 equivalent

2N3819

2N3819 equivalent

306-803

306-803

306-803

2N3819 equivalent

2N3819 equivalent

TEMIC 2N3819

5T3824

2N4303

T018

2N4039