2n3819 field-effect transistors
Abstract: MPF102 MMBF-5457 bf245b
Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457
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2N3819
2N5457
2N5458
BF245A
BF245B
BF256A
2N5460
2N5461
2N5462
O-226AA,
2n3819 field-effect transistors
MPF102
MMBF-5457
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PDF
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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PDF
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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PDF
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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MMBF0202PLT1
ENHANCE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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Original
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MMBF0202PLT1
ENHANCE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE
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Original
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MGSF1N03LT1
Sur218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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BC237
Abstract: marking CODE N3 SOT223 marking N3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE
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Original
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MGSF1N03LT1
Sur218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
marking CODE N3 SOT223
marking N3
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BC237
Abstract: 2N7002LT1 Motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3442VT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
2N7002LT1 Motorola
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BC237
Abstract: 31 MOSFET sot-323
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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Original
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MMBF0201NLT1
Mo218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
31 MOSFET sot-323
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBF2202PT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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Original
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MMBF2202PT1
70/SOT
Spa218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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PDF
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transistor part number 2N2222A 338
Abstract: BC237 MARKING CODE diode sod123 W1 2N2222A 338 plastic package
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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Original
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MGSF3454XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
transistor part number 2N2222A 338
BC237
MARKING CODE diode sod123 W1
2N2222A 338 plastic package
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PDF
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BC237
Abstract: BC394 motorola 2N956 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP) Part of the GreenLine Portfolio of devices with energy–
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Original
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MGSF3454VT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
BC394 motorola
2N956 MOTOROLA
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BF256
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the Greenline Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High
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Original
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BSS84LT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BF256
BC237
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PDF
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TIS34
Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
Text: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20
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OCR Scan
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2N2386
2N2497
N2498
N2499
2N2S00
2N3328
2N3330
2N3331
N3332
2N3573
TIS34
tis58
TIS25
TIS59
2N3328
TIS42
2N2499
2N3820
silec
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2n5248
Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE
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OCR Scan
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BC264A
O-92DE
BC264B
BC264C
BC264D
BF246A
O-92DA
2n5248
BF245C
BF247A
2N5485
2n5556
2N5668
BF244A
2N5103
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PDF
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2n3819
Abstract: bf245b
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+
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OCR Scan
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BC264A
BC264B
BC264C
BC264D
BF246A
BF246B
BF246C
BF247A
BF247B
BF247C
2n3819
bf245b
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PDF
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2N4303
Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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OCR Scan
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DQD0144
2N3069
2N4038
2N4339
2N3436
2N4039
2N4391
2N3437
2N4091
2N4392
2N4303
2n3866 noise
2N5566
2N4304
2N4393
uhf vhf amplifier
UHF UHF Transistors
BF161
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PDF
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T018
Abstract: t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier
Text: diode TR ANS ISTOR CO INC A4 DE I 5 5 4 5 3 5 5 0000144 T \ ^ D1QDE TRdf\l515TQR CQ.,lf\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5863 _ SILICON FIELD EFFECT TRANSISTORS- •N— CHANNEL DEVICES
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OCR Scan
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2N3069
2N4038
2N4339
2N3436
2N4039
2N4391
2N3437
2N4091
2N4392
2N3686
T018
t018 transistor
2N4303
2n4304
BF161
UHF UHF Transistors
transistor t052
2N4221 transistor
2N4095
uhf transistor amplifier
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PDF
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Untitled
Abstract: No abstract text available
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE
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OCR Scan
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BC264A
BC264B
BC264C
BC264D
BF246A
O-92DE
O-92DA
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PDF
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TO-92DD
Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min
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OCR Scan
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BC264A
O-92DE
BC264B
BC264C
T092DE
BC264D
BF246A
O-92DA
TO-92DD
BF246B
BF246C
BF247A
BF247B
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PDF
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2N4039
Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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OCR Scan
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DQD0144
2N3069
2N4038
2N4339
2N3436
2N4039
2N4391
2N3437
2N4091
2N4392
2N4303
2N4304
t018 transistor
T018
2N4417
t071
uhf vhf amplifier
2N4221
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PDF
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TIS69 equivalent
Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the
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OCR Scan
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2N5045,
2N5046,
2N5047
TIS69 equivalent
2N3575
Germanium itt
TIS59
TIS58
2N2386
TIS26
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PDF
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