RF Amplifiers
Abstract: 2n5952 equivalent 2N3819 equivalent transistor 2N5952 datasheet 2n5484 jfet 2N5951 2n4416 2n4416 jfet 2N5952 2n5484 equivalent
Text: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ (µmho) f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC
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2N5952
2N5953
2N3819
2N4416
2N4416A
2N5484
2N5485
2N5486
2N5949
2N5950
RF Amplifiers
2n5952 equivalent
2N3819 equivalent
transistor 2N5952
datasheet 2n5484 jfet
2N5951
2n4416
2n4416 jfet
2N5952
2n5484 equivalent
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2N5950
Abstract: 2N5952
Text: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ µmho) (µ f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC
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2N3819
2N4416
2N4416A
2N5484
2N5485
2N5486
2N5949
2N5950
2N5951
2N5952
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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BS170
226AA)
DS218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
bs170 replacement
BC237
BC30
transistor K 2056
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date code IEC 62
Abstract: bc107a pin out BC237 bf256c
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage
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VN0610LL
226AA)
secon218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
date code IEC 62
bc107a pin out
BC237
bf256c
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code marking 6z sot-23
Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous
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MMBF170LT1
236AB)
C218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
code marking 6z sot-23
BC237
H2A transistor
BF245
6z sot223 marking
MMBV2104
j112 fet
BCY72
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BC237
Abstract: 2N3819 junction fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs
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BSS123LT1
236AB)
CHARACTERIS218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
2N3819 junction fet
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BC237
Abstract: Fet BF245
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V
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VN0300L
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
Fet BF245
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BC237
Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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VN2222LL
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
transistor 2n2222a to-92
OF transistor 2N2222 to-92
transistor 2N3819
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BC237
Abstract: MSA1022 msc2295 BF391 "direct replacement"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for
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M218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
BC237
MSA1022
msc2295
BF391 "direct replacement"
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BC237
Abstract: transistor TO-92 bc108 VN10lM equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN10LM N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 2 3 CASE 29–05, STYLE 22 TO–92 TO–226AE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous
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VN10LM
226AE)
Vol218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
transistor TO-92 bc108
VN10lM equivalent
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BC237
Abstract: BC857A MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,
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BSS138LT1
OT-23
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
BC857A
MARKING CODE diode sod123 W1
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2N3819 fet
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2N7002LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N3819 fet
BC237
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2N3819 junction fet
Abstract: 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage
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MPF6659
MPF6660
MPF6661
MPF6661
226AE)
MSC1621T1
MSC2404
MSD1819A
2N3819 junction fet
2N5486 characteristics
BC237
bc107a pin out
j305 replacement
BCY72
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BC237
Abstract: 2N7000 Fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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2N7000
226AA)
f218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2N7000 Fet
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2N5485
Abstract: 2N5951 2N4416 2N5950 2N5952 Variable resistor 50K ohm 2N3819 2N4416A 2N5484 2N5486
Text: Junction FETs RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re IYfsl Re IYosj @ C|SS NF rs* @ V BR GSS TO-92 v GS(off) loss PIN OUT @ (mmho) f Qimho) f <PF) <PF) <dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) (V) TO-92 2N3819
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OCR Scan
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2N3819
2N4416
2N4416A
2N5484
2N5485
2N5486
2N5949
2N5951
2N5950
2N5952
Variable resistor 50K ohm
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2N3819
Abstract: transistor 2N3819 2n3819 transistor J-FET 2N3819
Text: MIE D PHILIPS INTERNATIONAL D ata sheet status Preliminary specification d a te of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. • 711002b G02b333 0 ■ PHIN 2N3819 T-3S-2S N-channel J-FET PINNING - TO-92
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OCR Scan
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PDF
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711002b
G02b333
2N3819
MBB081
G02b334
T-35-25
711i0fiBb
005b33b
2N3819
transistor 2N3819
2n3819 transistor
J-FET 2N3819
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Untitled
Abstract: No abstract text available
Text: Philips Components D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a t io n d a te o f is s u e O c t o b e r 1990 2N3819 N-channel J-FET PINNING - TO-92 FE A T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1
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OCR Scan
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PDF
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2N3819
bb53T31
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transistor 2N3819
Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION
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OCR Scan
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2N3819
J-FET-2N3819
transistor 2N3819
2N3819
n 3819
2n3819 transistor
2N3819 ti
3819 transistor
J-FET
philips jfet
n-channel JFET
J-FET-2N3819
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transistor 2N3819
Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N
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OCR Scan
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2N3819
UBB081
D035fl44
J-FET-2N3819
transistor 2N3819
2N3819
2N3819 ti
2n3819 transistor
J-FET-2N3819
2N3819 data
JFET 2N3819
J-FET TRANSISTOR
UBB081
philips jfet
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2N5952
Abstract: No abstract text available
Text: Junction fets* RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re lYfel R IYqsI & c iss NF c rss @ TO-92 V BR GSS vGS(off) (V) •d s s PIN OUT @ (mmho) f Ounho) f (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0 4.0
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OCR Scan
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PDF
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2N3819
2TO-92
2N4416
2N4416A
2N5484
2N5485
2N5486
2N5949
2N5950
2N5952
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2N5949
Abstract: 2N5951 2N5953 2N5952 2n3819
Text: Junction FETs RF Amplifiers TO-72 N-Channel C A SE TYPE NO. Re lYfgl Re IY0S| c is s NF ^rss @ V BR G SS TO-92 v GS(off) •d s s PIN OUT @ (mmho) f Oimho) i (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) 00 TO-92
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OCR Scan
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PDF
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2N3819
2N4416
2N4416A
2N5484
2N5485
2N5486
2N5949
2N5950
2N5951
2N5952
2N5953
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PN4360
Abstract: pn3687
Text: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. ReH ^OSl R e n ffsl C |SS c rss IF @ @ TO-92 V BR GSS VGS (O ff) (V y •ds >S PIN OUT (mmho) f Qimho) f <PF> (PF) W ) RG=1K 00 MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0
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OCR Scan
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2N2608
2N2609
2N3820
2N5020
2N5460
2N5461
2N5462
PN4360
PN4360
pn3687
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2N3819 NATIONAL SEMICONDUCTOR
Abstract: National 2N3819 2n3819 surface mount 2n5951 2N5245 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305
Text: bflE D • bSDllBO □ D 3 cm ci,:i SS7 INSCS NATL SEMICOND DISCRETE TO -52 N Channel DG VP@VDSID m BVqsj Device (V) Min (V) Min Max 2N3819 25 2N4416 30 2.5 im 8 15 2 6 15 RelYfsl NF Re(Yos) Clss Crss (dB)@Rg = 1k (mmho) @ f (limho) @ f Package (PF) (PF)
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OCR Scan
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2N3819
2N4416
PN4416
MMBF4416
2N5245
2N5246
2N5247
2N5397
2N5484
MMBF5484
2N3819 NATIONAL SEMICONDUCTOR
National 2N3819
2n3819 surface mount
2n5951
N CHANNEL JFET 2N3819
2N5953
2n4416 national
MMBFJ305
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2N3819 NATIONAL SEMICONDUCTOR
Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Text: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k
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OCR Scan
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bSD113D
D3I14ci,
2N3819
T0-92
2N4416
PN4416
MMBF4416
O-236*
2N5245
2N3819 NATIONAL SEMICONDUCTOR
National 2N3819
2n3819 surface mount
2N5247
MMBFJ304
MMBFJ305
N CHANNEL JFET 2N3819
2N5951
2N5246
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