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    2N3819 TI Search Results

    2N3819 TI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
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    2N3819 TI Price and Stock

    Central Semiconductor Corp 2N3819 TIN/LEAD

    Transistor RF JFET N-CH 25V 20mA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N3819 TIN/LEAD)
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    Avnet Americas 2N3819 TIN/LEAD Box 2,500
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    Mouser Electronics 2N3819 TIN/LEAD 746
    • 1 $1.51
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    • 100 $0.82
    • 1000 $0.591
    • 10000 $0.496
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    Central Semiconductor Corp 2N3819 APM TIN/LEAD

    JFETs 8V,10mA,360mW Through-Hole JFET N Channel
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    Mouser Electronics 2N3819 APM TIN/LEAD
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    Central Semiconductor Corp 2N3819 TRE TIN/LEAD

    JFETs 8V,10mA,360mW Through-Hole JFET N Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N3819 TRE TIN/LEAD
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    2N3819 TI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 2N3819

    Abstract: 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


    Original     		2N3819 450MHz, transistor 2N3819 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3819 N-Channel RF Amplifier w • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low


    Original     		2N3819 450MHz, 86MAX PDF

    2N3819 equivalent

    Abstract: 2N4223-24 2N5045 2N5045-7 dual jfet vhf 2N3819 2N3819 data 2N3821-4 2N3921-2 2N4084-5
    Text: designed fo r . B Siliconix . Perform ance Curves M IL See Section 5 • General Purpose Amplifiers ■ Analog Switching 2N3819 n-channel JFET BEN EFITS • Low Cost • Specified at 100 M Hz • Automatic Insertion Package •A B S O L U T E M A X IM U M R A TIN G S 25°C


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    TIS58

    Abstract: TIS58 fet TIS88A TIS88 TIS59 BF245 BF256LC A5T4261 BF246 BF256LA
    Text: S FET's Silect For General Purpose Amplifiers Type No. Case TIS58 TIS59 T092 TQ92 O 5 Pol Û . IGSS CD I max. nA V n c 'it i A N N 25 2b O ft 4 4 F, 5 5 5 BF244A* BF244B* BF244C* T092 T092 T092 N N N N 2N3819 T092 N 25 2 2N3820 T092 P 20 20 2 N5460 T092 P


    OCR Scan     		TIS58 TIS59 BF245 BF244A* BF245A BF244B* BF245B BF244C* BF245C 2N3819 TIS58 fet TIS88A TIS88 BF256LC A5T4261 BF246 BF256LA PDF

    5T3824

    Abstract: ME1600 5T3821 2N3819 Texas Instruments
    Text: TYPE 2N3819 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 8 0 4 7 , A U G U S T 1 9 6 5 - R E V IS E D M A Y 1968 S IL E C T t F IE L D -E F F E C T T R A N S IS T O R * • For Industrial and Consumer Small-Signal Applications


    OCR Scan     		2N3819 5T3821 5T3824 ME1600 2N3819 Texas Instruments PDF

    2N3819 equivalent

    Abstract: 2N5045 2N3819 2N3821-4 2N3921-2 2N4084-5 2N4220-2 2N4223-24 2N5457-9 2N5556-58
    Text: MPFl 11 n-channel JFET designed fo r B . Siliconix Perform ance Curves NRL See Section 5 • General Purpose Amplifiers ■ Analog Switches B EN EFITS • Low Cost • Automatic Insertion Package TO -92 See Section 7 ABSOLUTE M A X IM U M RA TIN G S 25°C


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    2N3819 equivalent

    Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
    Text: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C


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    306-803

    Abstract: 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor
    Text: Issued November 1983 002-983 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


    Original     		20Vdc 100mV 306-803 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor PDF

    306-803

    Abstract: 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741
    Text: Issued March 1997 232-2245 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


    Original     		20Vdc 100mV 306-803 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741 PDF

    2n3819 equivalent ic

    Abstract: 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent U401-6 2n4220 2N3821-4 2N3921-2 2N4084-5
    Text: monolithic dual n-channel JFET S NNR BACKS'0€ JUNCTION ISOLATED Siliconix designed f o r . . . • FE T Input Amplifiers B E N E FIT S : ■ Low and Medium Frequency Amplifiers • ■ Impedance Converters ■ Precision instrumentation Amplifiers M inim um System Error and Calibra­


    OCR Scan     		10mV/Â 2N3921-2, 2N4084-5, 2N5045-7, U401-6 2N4085CHP, 2N5046CHP-47CHP, U403CHP-06CHP 2n3819 equivalent ic 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent 2n4220 2N3821-4 2N3921-2 2N4084-5 PDF

    2N3819 equivalent

    Abstract: 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent
    Text: P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON)(mA) J174 30.00 1.00 85 J175 30.00 .50 125 Operating Temperature: -55 o C to 150oC Part No. RDS(ON)(Ω) Drain-Source Min. On-State


    Original     		150oC 2N4858 2N4858A 2N4393 2N4859 2N4860 2N4860A 2N4861 2N3819 equivalent 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent PDF

    TP4119

    Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
    Text: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*


    OCR Scan     		0D03bQ0 TP3369 TP3370 TP3458 91-ao O-226AA/STYLES TP4119 2n3819 field-effect transistors nj132 TP3823 TP4392 2N3819 NJ16 NJ32 PDF

    TIS34

    Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
    Text: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20


    OCR Scan     		2N2386 2N2497 N2498 N2499 2N2S00 2N3328 2N3330 2N3331 N3332 2N3573 TIS34 tis58 TIS25 TIS59 2N3328 TIS42 2N2499 2N3820 silec PDF

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


    OCR Scan     		100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69 PDF

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 PDF

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568 PDF

    MPS5771

    Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage


    Original     		MPS3640 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS5771 MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic PDF

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


    Original     		Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 PDF

    MMBF4856

    Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


    Original     		MPQ3906 Therm218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MMBF4856 BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L PDF

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


    Original     		MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72 PDF

    bf244

    Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage


    Original     		226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bf244 MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819 PDF

    2N5458

    Abstract: TP4221
    Text: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions


    OCR Scan     		2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117 TP4118 2N5458 TP4221 PDF

    FET package TO-71

    Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
    Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25


    Original     		O-226AA VP0808L VP1008L TP1220L BSS92 VP2020L TP2020L VP2410L O-206AF 3N164 FET package TO-71 SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L PDF

    TP4221

    Abstract: No abstract text available
    Text: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS


    OCR Scan     		-92ITO -226AA 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4221 PDF