2SK105 Datasheet

Abstract: 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2SK105

Abstract: 2SK59 SGD 2SK40 2SK40 SGD 2SK17 2SK105 E interfet 2SK59 2SK17 SGD IFN105
Contextual Info: E2 9-97 Jagranes^guivalenUF^n^ges SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Unit Limit N N N N Channel Channel Channel Channel V M in -2 0 -5 0 -3 0 -5 0 nA Max

Contextual Info: ALL E GR O MICROSYSTEMS INC S3 D • □SDMSSfl D0G37L.1 S ■ AL GR T-91-01 PROCESS NJ32 Process NJ32 N-Channel Junction Field-Effect Transistor Process NJ32 is an N-channel junction field-effect transistor designed for use as a general-purpose audio amplifier. It is similar to Process NJ16 in basic

Contextual Info: B 59 9-97 J232 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR AUDIO AMPLIFIER Absolute maximum ratings at TA= 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Process NJ16

2SK105

Abstract: 2SK105 F aX 010 2SK105 E 2sk40 2sk59
Contextual Info: 9-97 E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 N N N N Channel Channel Channel Channel -2 0

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in

Contextual Info: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0

2SK105 DGS

Abstract: 2SK105 V6010 2sj44
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

J555

Abstract: 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-6 F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj

2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2N3967

Abstract: 2N3369 2N3370 2N3460 2N3821 2N3822 2N3967A 2N3968 NJ16
Contextual Info: INTER P E T C OR P EbE D • 4a2Lflflö 0 0 0 0 1 6 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiom V<8« GSS Ig nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 -4 0 -4 0 -5 0 -5 0 -5 0 -1 -1 -1 -1 -1 2N3821

Contextual Info: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0

Contextual Info: F4 9-97 Small O utline Surface M ount Package Devices N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BVgsS Device Type >GSS VgS(OFF) Limits Conditions Min Max Vos to Min Max @Vds (mA) (mA) (V) Min @Ig Max @VGS (V) (UA) (nA) (V) SMP 4340 SMP4341 SMP 4391

Contextual Info: D6 9 -9 7 J553, J554, J555, J556, J557 CURRENT REGULATOR DIODE • CURRENT REGULATION • CURRENT LIMITING • BIASING Absolute maximum ratings at TA = 25'C. Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation 50 V 50 mA

2N4119

Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Contextual Info: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. ^3 D • flS13A5Q Q003b i o T " | i S E M I C O N D S / ICS 9 3 D 0 3 6 1 0 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS

Contextual Info: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions

Contextual Info: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj

PJ32

Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max

2a2 SOT-23

Abstract: PI7C9X111SL PI7C9X20303 PI7C9X112SL PI7C9X111 PI7C9X20505 evaluation board PI7C9X111SL PI7C9X7952 HDMI TO VGA MONITOR PINOUT PI7C9X20508
Contextual Info: CONNECTIVITY SIGNAL INTEGRITY Connectivity TIMING Connectivity Solutions from Pericom Electronics today are fast – the signals that drive them run at increasingly higher speeds. Most commonly this is done using a serial bus, or high-speed circuit board, which connects components

VCR2N

Abstract: NJ16
Contextual Info: Databook.fxp 1/14/99 11:33 AM Page C-8 C-8 01/99 VCR2N, VCR4N, VCR7N N-Channel Silicon Voltage Controlled Resistor JFET ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C. Small Signal Attenuators Filters Amplifier Gain Control Oscillator Amplitude Control

2N3954

Abstract: 2N3956 2N3955 TRANSISTOR 2n3955 2n3956 equivalent transistor NJ16 2N3954 Transistor
Contextual Info: Databook.fxp 1/14/99 11:29 AM Page B-5 B-5 01/99 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers 2N3954

NJ32

Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Contextual Info: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh

PD-1503

Abstract: pd1503 PD-2078 PD-2028 pd 2028 PD-2026 PD2028 pd2029 PD-2029 jedec MS-026 ABA
Contextual Info: Pericom offers a wide range of advanced packaging solutions to fit any application including SOTiny , DisplayPort™, ReDriver™, HDMI™, others. Additional information can be obtained from individual data sheets, or by contacting your Pericom representative.